The 60V/50A N-channel MOSFET SL50N06D, Suitable for the Power Transmission System in BLDC Motor Control Systems

2024-03-28 SLKOR News
Medium Voltage MOSFET,N-channel MOSFET,SL50N06D,SLKOR Medium Voltage MOSFET,N-channel MOSFET,SL50N06D,SLKOR Medium Voltage MOSFET,N-channel MOSFET,SL50N06D,SLKOR Medium Voltage MOSFET,N-channel MOSFET,SL50N06D,SLKOR

In the application scenarios of BLDC motor technology, the mid-voltage MOSFET SL50N06D provides key functions such as power control, motor commutation control, and temperature protection. It not only improves the efficiency and performance of power transmission systems in the field of BLDC motor technology but also enables more intelligent control. By providing high-precision regulation of phase currents in the motor, it achieves efficient and smooth motor operation. The application scenarios of BLDC motor technology are diverse and extensive, and the mid-voltage MOSFET SL50N06D is suitable for the power transmission system in BLDC motor control systems. As an important component, it plays a role in enabling the system to exhibit efficient and stable power control and protection, thereby driving the continuous development of electrification and smart technology.


SLKOR Medium Voltage MOSFET SL50N06D product photo

 

The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance (14mΩ at 10V, 25A) and low threshold voltage (1.6V at 250μA) ensure reduced power loss during operation. This device delivers excellent switching performance, can withstand high-energy pulses under avalanche and commutation modes, providing reliable power control and efficient performance for circuit design.


Slkor Medium Voltage MOSFET SL50N06D

 

Firstly, the device's on-resistance is only 14mΩ at 10V voltage and 25A current conditions, providing a low voltage drop and resistance loss in the on-state, effectively reducing power loss and enhancing efficiency. Additionally, its threshold voltage of 1.6V at 250μA indicates that reliable switching operation can be achieved by applying a low gate-source voltage at the control terminal. The SL50N06D exhibits a high drain-source voltage and current capacity, allowing it to operate stably in high voltage and high current situations without being easily damaged. Furthermore, it can quickly respond to high-energy pulse signals, enabling fast switching operations. Under high-energy pulse operation, its good thermal characteristics facilitate effective heat dissipation, preventing overheating that could damage device performance. Moreover, it demonstrates stable reliability, long lifespan, and good performance consistency.


Parameters of Slkor Medium Voltage MOSFET SL50N06D

The SL50N06D, as an excellent performance N-channel field-effect transistor, has wide application prospects in areas such as power management, drive control and inverters. In various types of power circuits, it can serve as a power switch to control circuit on-off states, enabling effective power management. It is also an ideal choice in the field of power management, capable of enhancing circuit efficiency and stability. Additionally, it can be used in various types of drive control circuits, such as motor drives and lighting control. It is often applied in various types of inverter circuits as well. Inverters, as crucial components of power conversion, require good power switching devices for efficient energy conversion.

 

In practical applications, the combination of SL50N06D and BLDC motor control technology not only improves the efficiency and performance of power transmission systems but also enables more intelligent control. By utilizing advanced digital signal processing technology and sensor feedback systems, precise control of motor speed, torque, position, and other parameters can be achieved to meet the requirements of different scenarios, driving the development of power transmission technology towards higher efficiency and reliability. The superior performance of Slkor's semiconductor products provides a strong foundation for BLDC motor control technology.


授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET SL50N06D,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.

产品    发布时间 : 2024-03-30

The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.

产品    发布时间 : 2024-03-28

60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems.

产品    发布时间 : 2024-03-20

JST40GN80D5-Q 85V N-Channel Mosfet

型号- JST40GN80D5-Q

数据手册  -  JESTEK  - Version:0-Q1.0  - 2022-6-23 PDF 英文 下载

数据手册  -  瑞之辰  - Version:2.0  - 2019/4/22 PDF 英文 下载

Power Components: MOSFET

When selecting a power MOSFET, factors such as its voltage and current ratings, Rds, switching speed, thermal stability, and packaging form need to be considered. In addition, the appropriate MOSFET type needs to be selected based on specific application scenarios and needs. MASPOWER provides the most suitable products according to customers‘ plans and provides customized services.

技术探讨    发布时间 : 2024-06-06

数据手册  -  JESTEK  - Version :0-0.2  - 2020/4/21 PDF 英文 下载

SL5N50D N-Channel MOSFET

型号- SL5N50D

数据手册  -  SLKOR  - 2022/3/29 PDF 英文 下载

WSR140N08 N-Channel MOSFET

型号- WSR140N08

数据手册  -  WINSOK  - Rev 3.0  - Oct. 2023 PDF 英文 下载

The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications

The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.

产品    发布时间 : 2024-03-31

The Medium Voltage MOSFET IRF540NS with a Threshold Voltage (Vgs(th)) of 4.0V@250μA and Drain-source Voltage (Vdss) of 100V

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.

产品    发布时间 : 2024-03-15

WSR22N50F N-Channel MOSFET

型号- WSR22N50F

数据手册  -  WINSOK  - Rev 3.0  - Oct. 2023 PDF 英文 下载

30V/85A N-channel Enhanced Mode Power MOSFET SW051R03VLT for Synchronous Rectification, Li Battery Protect Board, Motor Drives

SEMIPOWER N-channel enhanced mode power MOSFET SW051R03VLT is produced with the advanced technology of SAMWIN. This technology enables the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge, and especially excellent avalanche characteristics.

产品    发布时间 : 2023-11-16

DNM2N10A N-Channel MOSFET

型号- DNM2N10A

数据手册  -  晶导微电子  - Rev 2.1  - 13-Jul-23 PDF 英文 下载

WSD28N10DN33 N-Channel MOSFET

型号- WSD28N10DN33

数据手册  -  WINSOK  - Rev 3.0  - Apr. 2023 PDF 英文 下载

展开更多

电子商城

查看更多

只看有货

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0917

现货: 4,515,560

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0904

现货: 3,651,000

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0884

现货: 3,341,070

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0899

现货: 3,056,990

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0879

现货: 2,784,075

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0834

现货: 2,014,821

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.1100

现货: 1,995,500

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0904

现货: 1,967,800

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0679

现货: 1,772,550

品牌:格瑞宝电子

品类:N-Channel MOSFET

价格:¥0.0679

现货: 1,632,895

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:福斯特半导体

品类:MOS

价格:¥1.4550

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.6300

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥1.8600

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.9750

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.6300

现货:100

品牌:福斯特半导体

品类:MOS

价格:¥0.8100

现货:90

品牌:福斯特半导体

品类:MOS

价格:¥1.1550

现货:90

品牌:福斯特半导体

品类:MOS

价格:¥2.9700

现货:50

品牌:福斯特半导体

品类:MOS

价格:¥2.1450

现货:50

品牌:福斯特半导体

品类:MOS

价格:¥1.8600

现货:50

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

高热流密度液冷板定制

定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

最小起订量: 1片 提交需求>

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面