The 60V/5A N-channel MOSFET SL05N06Z Features Low On-state Resistance, High Switching Speed and Good Thermal Stability
In the application scenarios of power banks, the SL05N06Z Medium Voltage MOSFET features low on-state resistance, high switching speed, and good thermal stability. With the continuous development of the power bank market and technological advancements, outstanding components that meet the needs of power banks have gradually become a focus of attention. This high-performance Medium Voltage MOSFET can improve the operational efficiency of power banks, effectively extending the devices' battery life. It can also rapidly adjust output voltage and current to accommodate the charging needs of different devices, maintain stable performance in high-temperature environments, and has a small package size and excellent reliability. This makes it easy to integrate into the design of power banks.
SLKOR Medium Voltage MOSFET SL05N06Z product photo
The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low threshold voltage (1.7V at 250μA) ensure that it can reduce power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for performance enhancement and energy efficiency improvement in electronic devices and systems.
Slkor Medium Voltage MOSFET SL05N06Z
The SL05N06Z's low reverse transfer capacitance, fast switching capability, and specified avalanche energy are all important factors that contribute to its outstanding performance in circuit design and applications. The low reverse transfer capacitance helps enhance the circuit's frequency response and overall performance. Particularly in high-frequency circuits, MOSFETs with low reverse transfer capacitance can reduce signal attenuation and phase distortion, ensuring the accuracy and stability of signals during transmission.
Fast switching capability refers to the MOSFET's ability to quickly switch between the on-state and off-state. The SL05N06Z with fast switching capability has significant advantages in applications such as digital circuits, switch-mode power supplies, and high-speed communication systems. It can rapidly respond to external signals, accurately perform state transitions, thereby ensuring circuit stability and reliability.
Furthermore, a higher avalanche energy allows the device to better withstand abnormal voltage surges in the circuit, protecting the circuit from damage. This is particularly crucial in applications where stability is paramount, such as automotive electronics and industrial control systems.
Parameters of Slkor Medium Voltage MOSFET SL05N06Z
Its stability, efficiency, and reliability make it have broad application prospects in the field of electronics. In terms of applications, the SL05N06Z can be used in DC-DC converters and power management functions. In DC-DC converters, it can also serve as a critical power switching element to control the circuit's output voltage and current, achieving efficient energy conversion and stable output. In power management functions, the device can also be utilized for battery charging and discharging management, power switch control, and other aspects, helping to achieve efficient energy consumption management in electronic devices.
Overall, Medium Voltage MOSFETs have extensive applications and significant advantages in the field of mobile power. Their characteristics such as low on-resistance, high switching speed, low switching losses, and excellent thermal performance enable mobile power to operate efficiently, stably, and safely in fast charging, rectification synchronization, and power switching. With the continuous expansion of the mobile power market and technological advancements, the application prospects of Medium Voltage MOSFETs in the field of mobile power will become even broader. As an outstanding enterprise in the semiconductor equipment field, Slkor has developed a series of power semiconductor devices and drive modules suitable for the field of mobile power with its advanced technology and rich experience. Meanwhile, Slkor will continue to exert efforts to provide more possibilities for the society's intelligence and automation.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET SL05N06Z,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
SLKOR Semiconductor Low Voltage MOSFET SL318N04M with a Vdss of 40V and a Id of 318A
The SL318N04M is an N-channel MOSFET with a drain-source voltage (Vdss) of 40V, a continuous drain current (Id) of 318A, an on-resistance (RDS(on)@Vgs, Id) of 0.7mΩ@10V, 20A, a threshold voltage (Vgs(th)@Id) of 1.7V@250μA. It is packaged in LFPAK (5x6) and complies with the RoHS standard, being halogen-free. The distinguishing feature of the SL318N04M lies in its fast switching speed, as well as its reliable and robust performance.
产品 发布时间 : 2024-01-19
萨科微卖的好的MOS管有哪些?有2SK3018、2N7002E、BSS138、IRF540NS等型号
萨科微卖的好的MOS管有2SK3018、2N7002E、BSS138、IRF540NS、SL05N06Z等型号,本文讲述了它们各自的特点和应用。
产品 发布时间 : 2024-08-17
High-Performance Medium-Voltage MOSFETs SL142N06Q Boost Switching and Synchronous Rectification Applications
Firstly, let‘s look at the key parameters of the SL142N06Q. This MOSFET features an N-channel design with a drain-source voltage (Vdss) of up to 60V and a continuous drain current (Id) of up to 142A. Under operating conditions of 10V and 20A, its on-state resistance (RDS(on)@Vgs,Id) is only 2.2mΩ, and the threshold voltage (Vgs(th)@Id) is 1.7V @250μA.
产品 发布时间 : 2024-02-28
Comprehensive Interpretation of Slkor Voltage Regulator Diode ZM4728A
In the design of modern electronic devices, voltage regulator diodes play a crucial role in providing stable output voltage in circuits. Among them, as a member of the voltage regulator diode family, ZM4728A plays an indispensable role in various electronic applications due to its unique parameter configuration and excellent performance. This article will provide a detailed interpretation of ZM4728A, including its voltage regulation value, accuracy, power, reverse current, and impedance, among other key parameters.
产品 发布时间 : 2024-06-15
The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
产品 发布时间 : 2024-03-30
The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector
The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.
产品 发布时间 : 2024-03-28
ZM4737A Voltage Regulator Diode: Outstanding Stability Performance
In the ocean of electronics, every component plays an indispensable role. The ZM4737A voltage regulator diode undoubtedly shines as a brilliant star in this vast sea, with its outstanding stability performance and wide range of applications, becoming an essential part of circuit design.
产品 发布时间 : 2024-06-15
60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems.
产品 发布时间 : 2024-03-20
In-depth Analysis and Practical Guide of Voltage Regulator Diode ZM4740A
With the rapid development of electronic technology, voltage regulator diodes are playing an increasingly important role in circuit design. Among them, ZM4740A has become the focus of attention for electronic engineers due to its unique performance characteristics. This article will provide a detailed analysis of the various parameters of the ZM4740A and offer practical application guidelines.
产品 发布时间 : 2024-06-14
MMBZ5221B~MMBZ5262B SILICON PLANAR ZENER DIODES
型号- MMBZ5228B,MMBZ5226B,MMBZ5248B,MMBZ5246B,MMBZ5236B,MMBZ5258B,MMBZ5234B,MMBZ5256B,MMBZ5242B,MMBZ5232B,MMBZ5254B,MMBZ5240B,MMBZ5262B,MMBZ5230B,MMBZ5252B,MMBZ5260B,MMBZ5250B,MMBZ5239B,MMBZ5229B,MMBZ5237B,MMBZ5259B,MMBZ5227B,MMBZ5249B,MMBZ5235B,MMBZ5257B,MMBZ5225B,MMBZ5247B,MMBZ5233B,MMBZ5223B,MMBZ5245B,MMBZ5231B,MMBZ5253B,MMBZ5221B,MMBZ5243B,MMBZ5251B,MMBZ5241B,MMBZ5261B
The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications
The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.
产品 发布时间 : 2024-03-31
MM3Z2V0-MM3Z75 Silicon Planar Zener Diodes
型号- MM3Z6V8,MM3Z8V2,MM3Z9V1,MM3Z47,MM3Z2V7,MM3Z3V6,MM3Z3V9,MM3Z7V5,MM3Z4V7,MM3Z5V6,MM3Z24,MM3Z68,MM3Z2V4,MM3Z3V3,MM3Z5V1,MM3Z6V2,MM3Z27,MM3Z4V3,MM3Z2V0,MM3Z62,MM3Z2V2,MM3Z3V0,MM3Z43,MM3Z22,MM3Z20,MM3Z36,MM3Z15,MM3Z12,MM3Z56,MM3Z13,MM3Z18,MM3Z16,MM3Z39,MM3Z51,MM3Z10,MM3Z11,MM3Z33,MM3Z30,MM3Z75
The Medium Voltage MOSFET IRF540NS with a Threshold Voltage (Vgs(th)) of 4.0V@250μA and Drain-source Voltage (Vdss) of 100V
The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.
产品 发布时间 : 2024-03-15
电子商城
品牌:SLKOR
品类:Ultra Low Capacitance ESD Protection Diodes Array
价格:¥0.2500
现货: 50
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论