The 60V/5A N-channel MOSFET SL05N06Z Features Low On-state Resistance, High Switching Speed and Good Thermal Stability


In the application scenarios of power banks, the SL05N06Z Medium Voltage MOSFET features low on-state resistance, high switching speed, and good thermal stability. With the continuous development of the power bank market and technological advancements, outstanding components that meet the needs of power banks have gradually become a focus of attention. This high-performance Medium Voltage MOSFET can improve the operational efficiency of power banks, effectively extending the devices' battery life. It can also rapidly adjust output voltage and current to accommodate the charging needs of different devices, maintain stable performance in high-temperature environments, and has a small package size and excellent reliability. This makes it easy to integrate into the design of power banks.
SLKOR Medium Voltage MOSFET SL05N06Z product photo
The SL05N06Z is an N-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (60V) and a certain current carrying capacity (5.0A), making it very suitable for use in medium-voltage and medium-power circuit designs. In addition, its low on-state resistance (58mΩ at 10V, 3A) and low threshold voltage (1.7V at 250μA) ensure that it can reduce power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for performance enhancement and energy efficiency improvement in electronic devices and systems.
Slkor Medium Voltage MOSFET SL05N06Z
The SL05N06Z's low reverse transfer capacitance, fast switching capability, and specified avalanche energy are all important factors that contribute to its outstanding performance in circuit design and applications. The low reverse transfer capacitance helps enhance the circuit's frequency response and overall performance. Particularly in high-frequency circuits, MOSFETs with low reverse transfer capacitance can reduce signal attenuation and phase distortion, ensuring the accuracy and stability of signals during transmission.
Fast switching capability refers to the MOSFET's ability to quickly switch between the on-state and off-state. The SL05N06Z with fast switching capability has significant advantages in applications such as digital circuits, switch-mode power supplies, and high-speed communication systems. It can rapidly respond to external signals, accurately perform state transitions, thereby ensuring circuit stability and reliability.
Furthermore, a higher avalanche energy allows the device to better withstand abnormal voltage surges in the circuit, protecting the circuit from damage. This is particularly crucial in applications where stability is paramount, such as automotive electronics and industrial control systems.
Parameters of Slkor Medium Voltage MOSFET SL05N06Z
Its stability, efficiency, and reliability make it have broad application prospects in the field of electronics. In terms of applications, the SL05N06Z can be used in DC-DC converters and power management functions. In DC-DC converters, it can also serve as a critical power switching element to control the circuit's output voltage and current, achieving efficient energy conversion and stable output. In power management functions, the device can also be utilized for battery charging and discharging management, power switch control, and other aspects, helping to achieve efficient energy consumption management in electronic devices.
Overall, Medium Voltage MOSFETs have extensive applications and significant advantages in the field of mobile power. Their characteristics such as low on-resistance, high switching speed, low switching losses, and excellent thermal performance enable mobile power to operate efficiently, stably, and safely in fast charging, rectification synchronization, and power switching. With the continuous expansion of the mobile power market and technological advancements, the application prospects of Medium Voltage MOSFETs in the field of mobile power will become even broader. As an outstanding enterprise in the semiconductor equipment field, Slkor has developed a series of power semiconductor devices and drive modules suitable for the field of mobile power with its advanced technology and rich experience. Meanwhile, Slkor will continue to exert efforts to provide more possibilities for the society's intelligence and automation.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET SL05N06Z,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
萨科微卖的好的MOS管有哪些?有2SK3018、2N7002E、BSS138、IRF540NS等型号
萨科微卖的好的MOS管有2SK3018、2N7002E、BSS138、IRF540NS、SL05N06Z等型号,本文讲述了它们各自的特点和应用。
Zener Diodes and Intelligent Manufacturing: The Stabilizing Foundation Driving the Future
In the wave of intelligent manufacturing, every tiny component carries the responsibility of driving industry upgrades. The Zener Diode, as an essential semiconductor discrete device, plays an indispensable role in the field of intelligent manufacturing with its unique voltage regulation characteristics.
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
IRF540N/NS 100V N沟道MOSFET
本资料介绍了IRF540N/NS型100V N-Channel MOSFET的特性、规格和应用。该器件具有快速开关、100%雪崩测试和改进的dv/dt能力,适用于开关模式电源(SMPS)、不间断电源(UPS)和功率因数校正(PFC)等领域。
SLKOR - N-CHANNEL MOSFET,N沟道贴片MOS管,IRF540NS,IRF540N,全氟化碳,开关模式电源,功率因素矫正,UNINTERRUPTIBLE POWER SUPPLY,POWER FACTOR CORRECTION,不间断电源,UPS,SMPS,PFC,SWITCH MODE POWER SUPPLY
Comparison of the MM1W8V2 and MM1Z8V2B Zener Diodes
This article will introduce the MM1W8V2 Zener diode, a highly favored component in the industry. This diode stands out in various applications due to its excellent voltage regulation, high power handling, and low reverse current characteristics.
SLKOR MOSFET选型表
SLKOR提供以下参数的MOSFET选型,Vᴅss(V):-60~650,Vɢs(V):±8~±30,Iᴅ@Tᴄ=25℃(A):-70~100及多种不同的封装方式,如:SOT-23,SOP-8和TO-252-3不等
产品型号
|
品类
|
N/P
|
Vᴅss(V)
|
Iᴅ@Tᴄ=25℃(A)
|
Pᴅ@Tᴄ=25℃(W)
|
Vɢs(V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=4.5V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=2.5V)
|
Package
|
SL2333A
|
MOSFET
|
P
|
-12
|
-6
|
1.2
|
±8
|
40
|
50
|
SOT-23
|
选型表 - SLKOR 立即选型
SHIKUES Showcased GaN FET Products and Silicon Carbide Schottky Diodes at Shenzhen Electronic Components and Materials Procurement Exhibition
On October 11, 2023, the three-day Shenzhen Electronic Components and Materials Procurement Exhibition opened at the Shenzhen International Convention and Exhibition Center. SHIKUES presented efficient solutions in popular areas such as fast charging, energy storage, and photovoltaics at this exhibition.
BZG04系列硅齐纳二极管
该资料介绍了Silicon Labs公司的BZG04系列硅控整流二极管(Zener)的特性。这些二极管具有低阻抗、高可靠性的特点,适用于焊接热阻高达250℃/10秒的环境,并采用塑料封装和纯锡镀金引线。资料提供了详细的电气特性数据,包括最大正向电流、功率耗散、热阻、结电容等参数。
SLKOR - SILICON ZENER DIODES,硅稳压二极管,BZG04-180,BZG04-91,BZG04-160,BZG04-30,BZG04-100,BZG04-51,BZG04-220,BZG04-120,BZG04-12,BZG04-56,BZG04-33,BZG04-10,BZG04-75,BZG04-200,BZG04-16,BZG04-15,BZG04-36,BZG04-13,BZG04-18,BZG04-39,BZG04-1 1,BZG04-150,BZG04-62,BZG04-110,BZG04 SERIES,BZG04-82,BZG04-130,BZG04-8V2,BZG04-9V1,BZG04-22,BZG04-43,BZG04-20,BZG04-27,BZG04-47,BZG04,BZG04-24,BZG04-68
BZX84C2V4~BZX84C43硅平面齐纳二极管
本资料介绍了BZX84C2V4至BZX84C43型号的硅平面齐纳二极管。这些二极管具有简化轮廓(SOT-23)设计,适用于自动化组装过程,并具备300毫瓦的功率耗散能力。资料提供了绝对最大额定值、电气特性曲线和封装尺寸图。
SLKOR - 硅平面齐纳二极管,SILICON PLANAR ZENER DIODES,BZX84C6V8,BZX84CXXX,BZX84C4V7,BZX84C5V6,BZX84C43,BZX84C3V9,BZX84C7V5,BZX84C22,BZX84C2V7,BZX84C3V6,BZX84C8V2,BZX84C9V1,BZX84C20,BZX84C4V3,BZX84C6V2,BZX84C2V4,BZX84C3V3,BZX84C5V1,BZX84C3V0,BZX84CXXX SERIES,BZX84C27,BZX84C24,BZX84C10,BZX84C11,BZX84C33,BZX84C30,BZX84C18,BZX84C16,BZX84C39,BZX84C36,BZX84C15,BZX84C12,BZX84C13
What Is The Purpose of MOSFET?
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in electronic circuits. Due to their high input impedance, low power consumption, and fast switching speeds, MOSFETs play a crucial role in modern electronic devices. This article will explore the main applications of MOSFETs and their use in various fields.
MOSFETs SL5N100F with a Drain-source Voltage of up to 1kV Is Primarily Suitable for Various Types of Switching Circuits
Among them, the high-voltage MOSFET SL5N100F is a star product in Slkor Micro Semiconductor‘s product line. The SL5N100F adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, a continuous drain current (Id) of 5A, and a power dissipation (Pd) of up to 60W. Its on-state resistance (RDS(on)@Vgs,Id) is only 4.2Ω, and the threshold voltage (Vgs(th)@Id) is 3.5V@100μA, with a TO-220F package. These parameters demonstrate that the SL5N100F exhibits excellent performance in high-voltage, medium current, and medium-power applications.
Where Are TVS Transient Suppression Diodes Used
A TVS (Transient Voltage Suppressor) diode is specifically designed to protect electronic circuits from transient overvoltages, such as surge currents and electrostatic discharges. It can quickly respond to voltage spikes, limiting overvoltage and protecting downstream circuit components from damage.
FDV301N N沟道MOSFET
该资料介绍了FDV301N N-Channel MOSFET的特性。内容包括其结构图、典型特性曲线、热响应曲线以及封装尺寸。
SLKOR - N-CHANNEL MOSFET,N沟道贴片MOS管,FDV301N
SLKOR High-voltage MOSFET SL13N50FS with an On-resistance of 520mΩ@10V and a Continuous Drain Current of 13A
One of the important products of SLKOR is the high-voltage MOSFET SL13N50FS. The SL13N50FS is an N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 13A, and a power handling capability of 50W. Additionally, it has an on-resistance of 520mΩ@10V, 6.5A, and exhibits fast switching characteristics under low current and low gate charge conditions. This makes the SL13N50FS perform exceptionally well in applications such as high-frequency switch-mode power supplies.
MBR0520-0580 SOD-123塑封二极管
本资料介绍了硅实验室(Silicon Labs)生产的MBR0520-0580型号表面贴装二极管。该产品具有无铅工艺和RoHS合规性,适用于高电流应用,并具备极低的导热系数。资料提供了最大额定值、电气特性、典型特性和建议的PCB焊盘布局。
SLKOR - 塑料封装二极管,PLASTIC-ENCAPSULATE DIODES,MBR0580,MBR0560,MBR0530,MBR0540,MBR0520
电子商城
品牌:SLKOR
品类:Ultra Low Capacitance ESD Protection Diodes Array
价格:¥0.2500
现货: 50
现货市场
登录 | 立即注册
提交评论