The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications

时间： 2024-03-31 来源：SLKOR News

技术问答

In addition to switch control, the Medium-Voltage MOSFET can also adjust the intensity and direction of current based on instructions from the power management system. This capability enables the power management system to flexibly adjust the device's power supply according to different work scenarios and requirements. For instance, in the electric motor drive system of new energy vehicles, the power management system can achieve precise control over motor speed and power by adjusting the operational status of the Medium-Voltage MOSFET. Furthermore, the Medium-Voltage MOSFET features low on-state resistance and leakage current, helping to reduce energy loss within the power management system. In high-voltage, high-power environments, this low power consumption characteristic is particularly crucial. It not only enhances energy utilization efficiency but also prolongs the device's lifespan and reduces maintenance costs.

Medium Voltage MOSFET 2N7002KDW product photo

The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.

SLKOR Medium Voltage MOSFET 2N7002KDW

The Medium-Voltage MOSFET 2N7002KDW is encapsulated in epoxy resin that meets the UL94V-0 rating, indicating excellent flame-retardant properties. This feature effectively reduces the risk of fire under equipment faults or abnormal operating conditions, thereby enhancing the overall system's safety. Another notable feature of the 2N7002KDW is its suitability for Roston's high-density battery designs, enabling stable current and voltage control during operation. This design minimizes performance instability or damage caused by voltage fluctuations or current surges. The high-density battery design not only enhances the power density and efficiency of the MOSFET but also demonstrates outstanding performance in high-power, high-density applications such as electric motor drives in new energy vehicles and industrial automation equipment. Its high saturation current capability provides increased reliability and stability when handling high-current, high-power signals, contributing to improved system response speed and efficiency, thus enhancing overall performance. Furthermore, the integration of ESD protection circuits in the 2N7002KDW effectively guards against component damage from electrostatic discharge, thereby improving the device's resistance to electrostatic interference. This is crucial for ensuring stable operation and prolonging the device's lifespan.

Parameters of Slkor Medium Voltage MOSFET 2N7002KDW

With continuous technological advancements and expanding markets, the prospects for the application of Medium-Voltage MOSFET in power management systems are becoming increasingly promising. On one hand, as fields such as new energy vehicles and industrial automation rapidly expand, the demand for efficient and reliable power management systems will continue to grow. On the other hand, with the continuous emergence of new materials and processes, the performance of Medium-Voltage MOSFET will be further enhanced, enabling its application in power management systems to become more extensive and profound. In summary, the collaborative work between Medium-Voltage MOSFET and power management systems is crucial for achieving efficient and stable operation of equipment. By providing powerful technical support through high-precision current switching and regulation, Medium-Voltage MOSFET plays a key role in power management systems.

With the continuous advancement of technology and the expanding scope of applications, we have every reason to believe that Medium-Voltage MOSFET will play an increasingly important role in power management systems, contributing more power to the energy utilization and performance enhancement of modern electronic devices.

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本文由Vicky转载自SLKOR News，原文标题为:【Daily Highlight】The Medium Voltage MOSFET 2N7002KDW，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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PRODUCT CATALOG

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选型指南 - PANJIT - 2024/6/7 PDF 英文下载

SL318N04M N-Channel Enhancement Mode MOSFET

型号- SL318N04M

数据手册 - SLKOR - Rev.1 - 13 December 2019 PDF 英文下载

The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles

The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.

产品发布时间 : 2024-03-30

The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications

The Slkor Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.

产品发布时间 : 2024-04-11

The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector

The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.

产品发布时间 : 2024-03-28

SL9926A 20V/6A Dual N-Channel MOSFET

型号- SL9926A

数据手册 - SLKOR - 2022/7/30 PDF 英文下载

The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems

The Slkor Medium Voltage MOSFET 2N7002E is an N-channel MOSFET featuring a 60V drain-source voltage and a continuous drain current of 300mA. It‘s renowned for its low on-state resistance (3Ω@10V, 500mA) and low threshold voltage (2.5V@250μA). The advantages of this Medium Voltage MOSFET in power management lie in its efficient, reliable, and flexible handling of current and voltage. It effectively enhances the efficiency, stability, and reliability of power management systems.

产品发布时间 : 2024-04-10

60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems.

产品发布时间 : 2024-03-20

SL5N50D N-Channel MOSFET

型号- SL5N50D

数据手册 - SLKOR - 2022/3/29 PDF 英文下载

The 60V/3A N-channel MOSFET SL2310 Ensuring the Stability and Reliability of Battery Switches

Slkor SL2310 is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3A. It is renowned for its low on-resistance (105mΩ at 10V, 3A) and relatively low threshold voltage (2V at 250μA). These features make the SL2310 an ideal choice for switches and signal processing components in small household appliance applications, particularly where efficient and precise control is required.

产品发布时间 : 2024-04-10