The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications

时间： 2024-03-31 来源：SLKOR News

技术问答

In addition to switch control, the Medium-Voltage MOSFET can also adjust the intensity and direction of current based on instructions from the power management system. This capability enables the power management system to flexibly adjust the device's power supply according to different work scenarios and requirements. For instance, in the electric motor drive system of new energy vehicles, the power management system can achieve precise control over motor speed and power by adjusting the operational status of the Medium-Voltage MOSFET. Furthermore, the Medium-Voltage MOSFET features low on-state resistance and leakage current, helping to reduce energy loss within the power management system. In high-voltage, high-power environments, this low power consumption characteristic is particularly crucial. It not only enhances energy utilization efficiency but also prolongs the device's lifespan and reduces maintenance costs.

Medium Voltage MOSFET 2N7002KDW product photo

The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.

SLKOR Medium Voltage MOSFET 2N7002KDW

The Medium-Voltage MOSFET 2N7002KDW is encapsulated in epoxy resin that meets the UL94V-0 rating, indicating excellent flame-retardant properties. This feature effectively reduces the risk of fire under equipment faults or abnormal operating conditions, thereby enhancing the overall system's safety. Another notable feature of the 2N7002KDW is its suitability for Roston's high-density battery designs, enabling stable current and voltage control during operation. This design minimizes performance instability or damage caused by voltage fluctuations or current surges. The high-density battery design not only enhances the power density and efficiency of the MOSFET but also demonstrates outstanding performance in high-power, high-density applications such as electric motor drives in new energy vehicles and industrial automation equipment. Its high saturation current capability provides increased reliability and stability when handling high-current, high-power signals, contributing to improved system response speed and efficiency, thus enhancing overall performance. Furthermore, the integration of ESD protection circuits in the 2N7002KDW effectively guards against component damage from electrostatic discharge, thereby improving the device's resistance to electrostatic interference. This is crucial for ensuring stable operation and prolonging the device's lifespan.

Parameters of Slkor Medium Voltage MOSFET 2N7002KDW

With continuous technological advancements and expanding markets, the prospects for the application of Medium-Voltage MOSFET in power management systems are becoming increasingly promising. On one hand, as fields such as new energy vehicles and industrial automation rapidly expand, the demand for efficient and reliable power management systems will continue to grow. On the other hand, with the continuous emergence of new materials and processes, the performance of Medium-Voltage MOSFET will be further enhanced, enabling its application in power management systems to become more extensive and profound. In summary, the collaborative work between Medium-Voltage MOSFET and power management systems is crucial for achieving efficient and stable operation of equipment. By providing powerful technical support through high-precision current switching and regulation, Medium-Voltage MOSFET plays a key role in power management systems.

With the continuous advancement of technology and the expanding scope of applications, we have every reason to believe that Medium-Voltage MOSFET will play an increasingly important role in power management systems, contributing more power to the energy utilization and performance enhancement of modern electronic devices.

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本文由Vicky转载自SLKOR News，原文标题为:【Daily Highlight】The Medium Voltage MOSFET 2N7002KDW，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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描述- PANJIT is a public company founded in May 1986. PANJIT is a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines.

型号- 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PRODUCT CATALOG

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SL2300 N-Channel Power MOSFET DataSheet

型号- SL2300

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FDN337N 30V/2.2A N-Channel MOSFET

型号- FDN337N

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SL2302 N-Channel Power MOSFET

型号- SL2302

数据手册 - SLKOR - 2017/12/28 PDF 英文下载查看更多版本

SL3424 30V/3.8A N-Channel MOSFET

型号- SL3424

数据手册 - SLKOR - Rev.1 - 24 June 2019 PDF 英文下载

SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers

The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.

产品发布时间 : 2024-01-23

The Medium Voltage MOSFET IRF540NS with a Threshold Voltage (Vgs(th)) of 4.0V@250μA and Drain-source Voltage (Vdss) of 100V

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.

产品发布时间 : 2024-03-15