The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
In the motor drive systems of new energy vehicles, advanced control algorithms and circuit designs are typically employed to ensure that Medium-Voltage MOSFET operates at its optimum state. For instance, by optimizing the drive circuit and heat dissipation design of the MOSFET, its switching losses and temperature rise can be reduced, further enhancing the efficiency and reliability of the motor drive system.
Furthermore, as new energy vehicle technology continues to evolve, the performance requirements for Medium-Voltage MOSFET are constantly increasing. To meet higher power density and efficiency demands, researchers are continuously exploring new materials and processes to further enhance the performance of Medium-Voltage MOSFET. For example, the use of novel wide-bandgap semiconductor materials can significantly improve the voltage tolerance and switching speed of MOSFET, thereby further enhancing the performance of the motor drive system.
Medium Voltage MOSFET IRF640 product photo
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
SLKOR Medium Voltage MOSFET IRF640
The MOSFET IRF640 is able to more effectively conduct current when in the on-state, thereby reducing power losses and improving overall efficiency. In the motor drive systems of new energy vehicles, where a large amount of energy conversion is required, it has a lower RDS(on) to minimize energy losses. When the RDS(on) is less than 150mΩ, the IRF640 exhibits lower resistance in the on-state, enabling more efficient energy conversion. Additionally, minimal Lot-to-Lot variation is an important characteristic of the IRF640. Reduced Lot-to-Lot variation means that products from different batches are more consistent in performance, thereby enhancing the stability and reliability of the production process. This consistency is crucial in the motor drive systems of new energy vehicles, as even minor performance differences can impact the overall system operation. By optimizing production processes and quality control, the Medium-Voltage MOSFET can achieve minimal Lot-to-Lot variation, ensuring stable performance across each batch. Furthermore, conducting 100% avalanche testing ensures that the IRF640 possesses high voltage tolerance and stability in practical applications.
Parameters of Slkor Medium Voltage MOSFET IRF640
Firstly, in the motor drive systems of new energy vehicles, the robust performance and reliability of IRF640 ensure long-term stable operation, reducing the frequency of failures and maintenance. Secondly, in the field of industrial automation, this Medium-Voltage MOSFET is used as a driver and switch to control various equipment and machinery such as motors, pumps, and valves, enabling quick start-up, shutdown, and adjustment of equipment to improve production efficiency and quality. Additionally, in power systems, it is widely used in devices like power transformers and inverters to facilitate energy transmission and regulation, ensuring the safety and stable operation of power systems. In lighting systems and power electronic devices, it serves as a dimmer and switch for precise control and adjustment of lighting brightness. It can also be utilized in AC-DC converters and DC-AC inverters to enable energy conversion between different power sources.
In conclusion, the Medium-Voltage MOSFET IRF640 plays a pivotal role in the motor drive systems of new energy vehicles. Through continuous innovation and optimization, the Medium-Voltage MOSFET not only enhances the efficiency and reliability of motor drive systems but also provides strong support for performance improvements and increased range of new energy vehicles. With the continuous expansion of the new energy vehicle market and technological advancements, the application prospects of the Medium-Voltage MOSFET are becoming broader. We look forward to witnessing more technical breakthroughs and innovations in the field of motor drive systems for new energy vehicles using the Medium-Voltage MOSFET.
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本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET IRF640,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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目录- Company Profile Nomenclature of MOSFETs Automotive-grade MOSFETs Industrial-grade MOSFETs High-voltage MOSFETs APPLICATIONS OF AUTO-GRADE POWER SEMICONDUCTORS LEADING MOSFET PRODUCT INTRODUCTION MOSFET SYSTEM CERTIFICATION MOSFET PACKING INFORMATION
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描述- Formosa Microsemi's semiconductors are mainly focused on improving efficiency, power density and cost-effectiveness.The combination of the full range of Planar, Trench, and SJ MOSFETs enables innovative and performance mode power supplies (SMPS) in applications such as switching, battery-powered applications, motor control and drives, inverters, and calculations.
型号- FMOSP30P06,FMOSB3205,FMOSU06N90,FMOSU07N70B,FMOSP03N65,FMOSP3025A,FMOSPF10N90,FMOSP03N60,FMOSU07N70A,FMOSP40N10,FMOSU410,FMOSPFA05N60,FMOSP40N15,FMOSP03N70,FMOSAJ2352,FMOSU05N60KA,FMOSP04N60KA,FMOSU002NM65,FMOSU413,FMOSP04N60KB,FMOSP04N60KC,FMOSU08N50B,FMOSPFA05N65,FMOSP10N65K,FMOSUA09NM65,FMOSPFA02N65KA,FMOSP15N60,FMOSU830KA,FMOSU830KB,FMOSAC50P04,FMOSPF10N80,FMOSU21P04A,FMOSD36N10,FMOSAJ2340,FMOSU420,FMOSD630A,FMOSAC60N03,FMOSAC60N06,FMOSAC60N05,FMOSPFA05N50,FMOSP02N40K,FMOSU012N60Q,FMOSU03N25Z,FMOSB20N06,FMOSD02N30Z,FMOSP12N25V,FMOST01NM65,FMOSB09P10,FMOST01NM60,FMOSD08N40K,FMOSPX23N50E,FMOSU90N03A,FMOSPFA05N80,FMOSAC08NM65B,FMOSU80N06,FMOSP17N50K,FMOSU9435,FMOSA01N70,FMOSPF10N65,FMOSU01N60Q,FMOSAG03N25Z,FMOSPF10N60,FMOSU45P03,FMOST01NM70,FMOST16N15,FMOSU408,FMOSPFA03N60K,FMOSU01N60Z,FMOSQ07N10A,FMOSU80N10,FMOSPFA05N70,FMOSU02N40K,FMOSU08NM70A,FMOSU01N60A,FMOSAJ2305A,FMOSAJ4502,FMOSAJ2321,FMOSU405,FMOSU55N03,FMOSAC25P10,FMOSU01N60K,FMOSQ30N10,FMOSAC03N06,FMOSU06N50,FMOSU454,FMOSK05P04M,FMOSD24N06,FMOSAJ2312,FMOSAC03N10,FMOSAJ2316,FMOSU21P04,FMOSD03N100,FMOSU452,FMOSG1333,FMOSL654,FMOSQ30N04,FMOSU43N03,FMOSU18N25,FMOSA05N10,FMOSU10N65C,FMOSL8205,FMOSU06N65,FMOSPW60N10M,FMOSU09NM50A,FMOSU06N60,FMOST005N65,FMOSPFA05N90,FMOSPW33N25,FMOSP06N65KA,FMOSP03N40KA,FMOSD12N10,FMOSAJ2302,FMOSAJ2301,FMOSAG12NP03,FMOSAJ2304,FMOSAG05P04M,FMOSAJ2306,FMOSQ30N06,FMOSAJ2305,FMOSAJ2308,FMOSPF24NM65,FMOSQ4509,FMOST04N20,FMOSAJ2309,FMOSU06N70,FMOSPX60NM60,FMOSB07N70,FMOST04N03,FMOSPFA10N60Z,FMOSAJ015N10,FMOSAJ9435HZ,FMOSA05N06,FMOST02N60Q,FMOSPX60NM65,FMOSP64N04,FMOSU05NL70,FMOSB76N15,FMOSK02P06,FMOSU436,FMOSD01N50A,FMOSAG16N15,FMOST02N60K,FMOSPFA10N60K,FMOSD01N50K,FMOSUA3004,FMOSAG16N10,FMOST02N60D,FMOSU06N80,FMOSK302,FMOSU12N25V,FMOSPFA730K,FMOSB07N65,FMOSPW90N10,FMOSAG04N30,FMOSPFA10N60A,FMOST04N20Z,FMOSAC2003,FMOSAC5504,FMOSU02NM50A,FMOS1013T,FMOSPF08N40K,2N7002E,FMOSD28N03,FMOSU06N10,FMOSB540,FMOSU05N25Z,FMOSPF10N90B,2N7002T,FMOSD18P06,FMOS001P20,FMOSAC80N03,FMOSAC80N06,FMOSK351,FMOSU60N10M,2N7002K,FMOSPFA05N65A,FMOSP50P10,FMOS1012T,FMOSAG28N03,FMOSP08N100,FMOSPFA05N65K,FMOSAI2158,FMOSAC80N09M,FMOSPFA01N90,FMOSK04N10,FMOSU09N70A,FMOSD16N10,FMOSU03N65A,FMOSP60N10,FMOSU03N65B,FMOSU03N65C,FMOS002P06E,FMOSAJ6302,FMOSL606P,FMOST005N25,FMOSPFA10N65Z,FMOS001P10,FMOSP3025,FMOSD04N40,FMOSP03N06,FMOSAG3404,FMOS047N03,FMOSQ4953A,FMOSAG3400,FMOSPFA10N65A,FMOSPFA10N65K,FMOSU04NM60A,FMOSPX60N10,FMOSAG3409,FMOSU75N03,FMOSP60N03,FMOSP740A,FMOSAC2054,FMOSP60N05,FMOSP60N06,FMOSU08P03,FMOSP60N08,FMOSPWA24NM65,FMOSUC50P10,FMOSPWA24NM60,FMOS001P03,FMOSU18N20,FMOSP5210,FMOSPFA02N40K,FMOST02P50,FMOSAI0015N03,FMOSAP410,FMOSQ80N09M,FMOSP50P06,FMOSK9435H,FMOSD75P03,FMOSPFA50N06,FMOSU06N40,2N7002Z,FMOSAC80N07A,2N7002W,FMOSAJ4101,FMOSD04N60,FMOSAC45P03,FMOSAM7401,FMOSAC80N10,FMOSU484,FMOSPX80N06,FMOSA01N60,FMOSA01N65,FMOSAC23N15,FMOSAC55N06,FMOSAC6401,FMOSAC6402,FMOSU02N90,FMOSAM351,FMOSP15N06,FMOSM2311,FMOSB8010,FMOSAM3055,FMOSP06N90Z,FMOST005NM70,FMOSQ02NM65A,FMOSB15N65,FMOSQ10N10,FMOSU07NL70,FMOSAJ035N10,FMOSAC2305A,FMOSPFA17N50K,2N7002DW1,FMOSD40N025,FMOST005NM65,FMOST005NM60,FMOSM2305,FMOSH008N02Z,FMOSD03N50K,FMOST02P40,FMOSP15N10,FMOSAG2513,FMOSD02N70A,FMOSAC108N03,FMOSD02N70K,FMOSPFA03N65K,FMOST01N40A,FMOSHBSS84ZT,FMOSP15N25,FMOSB30P06,FMOSP15N20,FMOSAM001P03,FMOSPFA04N100A,FMOSU01N65Q,FMOSAG2502,FMOSAM02N10,FMOSU06NM60A,FMOSPX24NM60,FMOSU04NM65A,FMOST12N10,FMOSAJBSS139Z,FMOSPX11N80,FMOSACBSS84Z,FMOSP17P10,FMOSQ09N10,FMOSP17P12,FMOS2302A1,FMOSAC3416A,FMOSG001P03,FMOSU15N06,FMOSD05N65K,FMOSD34,FMOSAG10P02,FMOS3418V,FMOSB36N10,FMOSU02N65KA,FMOST9971P,FMOSD05N65B,FMOSU09NM50,FMOSD05N65A,FMOSU03N10,2N7002KW,FMOSAG20N03,FMOSPFA20NM65,FMOS01P10,FMOSQ25N10,FMOSU15N10,FMOSU12N60K,FMOSPFA830,FMOSP9530,FMOSAG3458,FMOSK9435HZ,FMOSQ9930M,FMOSP13N40K,FMOSU03N30,FMOSPW08N120,FMOSQ5003Z,FMOSU03N25,FMOST02P06,FMOSAJ2035Z,FMOS2303P,FMOSPFA07N65A,FMOSP6016,2N7002KA,FMOSPFA07N65C,FMOSAG3008,FMOSAJ001P03,FMOSAG3006,FMOSB12N65,FMOSAG2158,FMOSU03N70B,FMOSU04N50Z,FMOSU03N70C,FMOSAP01N10,FMOSAC001P03,FMOSU15N25,FMOSU05P20,FMOSAM410,FMOSU03N70A,FMOSD90N02,FMOSU15NM70A,FMOSD90N03,FMOS2302T,FMOSU04N50D,FMOSQ50N03,FMOSU15N30,FMOSU17P10,FMOSU04N50B,FMOSPF05N50A,FMOS2302W,FMOSPFA05N60KA,FMOSP634,FMOSAF21NM70,FMOSAMBSS84Z,FMOSD40N03A,FMOSU03N50,FMOSU06N10Z,FMOSAC2035Z,FMOS2301T,FMOSU34,FMOSAM4414,FMOSP06N60KA,FMOSPFA05N60A,FMOSP630,FMOSQ15P03,FMOSU15N20,FMOSQ15P04,FMOSA005NM65,FMOSG7401,FMOSPFA20NM70,FMOS2301W,FMOSA005NM60,FMOSU60N10,2N7002KWAI,2N7002KWAG,FMOS2301A,2N7002KWAL,2N7002KWAM,2N7002KWAJ,FMOSU50P06,FMOSAC6006,FMOSU11NM65,2N7002KWAC,FMOSU09NM95,FMOSPFA06N40K,FMOSAJ6354,FMOSU50P04,2N7002KWAP,FMOSD04N70,FMOSPFA,2N7002KWAN,FMOSP730K,FMOSU80N075A,FMOSP12N10,FMOSU40N025,FMOST02NM65A,FMOSAC75N06,FMOSAG3416,FMOSAG3413,FMOSP05N70K,FMOSA9435HZ,FMOSAC6016,FMOSAG3419,FMOSAG3418,FMOSAC75N03,FMOSAG40N025,FMOSPX15NM65,FMOSQ4812Z,FMOSU60N06,FMOSD04N80,FMOSAG3443,FMOSU09NM70,FMOSP12N65A,FMOSP12N65B,FMOSP36N05,FMOSPW460,FMOSPFA13N65,FMOSD04N90,FMOSD06N40A,FMOSAC035N10,FMOSPF13N40K
BASiC Semiconductor Launched Pcore™6 – Automotive 3-Phase Full-bridge SiC MOSFET Module for New Energy Vehicles
The automotive 3-phase Full-bridge SiC MOSFET Module Pcore™6 is designed and launched by BASiC Semiconductor based on the high-performance and high-efficiency requirements of power modules for core traction drivers from automobile manufacturers.
新产品 发布时间 : 2023-04-13
The 60V/60A N-channel MOSFET SL60N06 with Superior High-frequency Characteristics, Enabling Rapid Switching and Precise Control Within the Microwave Frequency Range
Slkor SL60N06is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 60A. It is renowned for its low on-resistance (11.5mΩ@10V,30A) and relatively low threshold voltage (4V@250μA). With the rapid advancement of microwave technology, the application of high-frequency circuits in fields such as radar, communication, and satellite navigation is becoming increasingly widespread. These attributes have garnered significant attention for the SL60N06 as a key component in high-frequency circuits, thanks to its excellent performance and reliability.
产品 发布时间 : 2024-04-11
The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector
The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.
产品 发布时间 : 2024-03-28
60V/30A N-channel MOSFET SL30N06D with Low On-state Resistance and Low Threshold Voltage Makes It An Ideal Choice for Automotive Electronic Systems
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250μA). These features make it an ideal choice for automotive electronic systems.
产品 发布时间 : 2024-03-20
The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems
The Slkor Medium Voltage MOSFET 2N7002E is an N-channel MOSFET featuring a 60V drain-source voltage and a continuous drain current of 300mA. It‘s renowned for its low on-state resistance (3Ω@10V, 500mA) and low threshold voltage (2.5V@250μA). The advantages of this Medium Voltage MOSFET in power management lie in its efficient, reliable, and flexible handling of current and voltage. It effectively enhances the efficiency, stability, and reliability of power management systems.
产品 发布时间 : 2024-04-10
The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications
The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.
产品 发布时间 : 2024-03-31
The 60V/3A N-channel MOSFET SL2310 Ensuring the Stability and Reliability of Battery Switches
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产品 发布时间 : 2024-04-10
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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