The 100V/10A N-channel MOSFET SL10N10A, An Ideal Choice for Automotive Charging Systems Due to Its Low On-state Resistance and Relatively Low Threshold Voltage
As is well known, one of the biggest shortcomings of new energy vehicles today lies in their batteries. Issues such as short range, long charging times, and safety concerns are all attributed to the power battery. Therefore, the primary goal of the next generation of batteries is to improve range, shorten charging times, and enhance battery safety. Solid-state batteries are seen within the industry as the next generation of power batteries, capable of effectively addressing these drawbacks. Recently, Zhiji Automobile suddenly announced that it will be the first to equip industry-leading mass-produced ultra-fast charging solid-state batteries in May. These batteries are capable of achieving over 1000 kilometers of long range and nearly 900V ultra-fast charging without the risk of thermal runaway or fire. Solid-state batteries, by definition, utilize solid electrodes and a solid electrolyte, distinguishing them from both liquid lithium batteries and fully solid-state batteries. Semi-solid-state batteries, on the other hand, represent a compromise between the two, differing primarily in the form and content of the electrolyte. With Zhiji's mass production and installation, this move may stimulate major manufacturers such as CATL and BYD to accelerate the deployment of semi-solid-state battery technology, propelling the domestic new energy vehicle market into the era of solid-state batteries more rapidly. Perhaps this year can be dubbed the "year of the solid-state battery," or at least the "year of the semi-solid-state battery."Medium-voltage MOSFETs play a crucial role in the field of new energy vehicles. These special field-effect transistors, with their unique voltage tolerance and high-efficiency conversion, have become indispensable components of power electronic systems. Their operation is based on voltage changes between the gate and source, controlling the formation and disappearance of the channel to achieve high-precision current regulation.
The Medium-Voltage MOSFET plays a crucial role in the solid-state battery circuit of new energy vehicles, contributing to key functions such as energy conversion, circuit protection, and system efficiency enhancement. Firstly, it is responsible for converting the direct current output from solid-state batteries into a form of energy suitable for use by motors and other electronic devices. Moreover, precisely controlling the conversion of current and voltage, it ensures the efficient utilization and stable transmission of energy. Secondly, it also undertakes the important task of circuit protection. In the solid-state battery circuit, due to significant variations in current and voltage, anomalies such as overcurrent and overvoltage may occur. This device, with its rapid response and high-precision control capabilities, can swiftly cut off abnormal currents, protecting other components in the circuit from damage. Additionally, it contributes to improving the system efficiency of the solid-state battery circuit in new energy vehicles. By optimizing the switching speed and energy loss of MOSFETs, energy losses in the circuit can be reduced, enhancing the overall energy conversion efficiency of the system. This is crucial for increasing the driving range of new energy vehicles and reducing energy consumption.
SLKOR Medium Voltage MOSFET SL10N10A product photo
The SL10N10A is an N-channel MOSFET with a 100V drain-source voltage and a continuous drain current of 10A. It is renowned for its low on-state resistance (95mΩ at 10V, 10A) and relatively low threshold voltage (3V at 250μA). These features make it an ideal choice for automotive charging systems, and as automotive electronic technology continues to advance, the potential of the SL10N10A will be further explored and applied.
Slkor Medium Voltage MOSFET SL10N10A
Firstly, the device features an advanced trench structure, which significantly enhances the device's channel density by reducing trench spacing and increasing the number of trenches. This design not only facilitates the flow of current but also effectively reduces resistance during conduction, further enhancing the device's conduction capability and efficiency. Additionally, the device boasts excellent heat dissipation properties, which are crucial for the stable operation of electronic equipment. Good heat dissipation ensures that heat generated during operation is effectively dispersed, preventing performance degradation or equipment damage due to overheating, and reducing aging effects caused by high temperatures, thereby extending the device's lifespan. Its low RDS(ON) high-density unit design is another feature that enhances the power density and efficiency of the MOSFET, making it excel in high-power, high-density applications such as electric vehicle motor drives and industrial automation equipment.
Parameters of Slkor Medium Voltage MOSFET SL10N10A
In the field of new energy vehicles, Medium-Voltage MOSFETs are widely used in motor control, battery management, and onboard charging systems. In motor control systems, they ensure efficient operation and smooth output of the motor by accurately controlling the flow of current. In battery management systems, these devices monitor the charging and discharging status of the battery to ensure its safety and stability. Additionally, in onboard charging systems, the high-efficiency conversion capability of Medium-Voltage MOSFETs enables faster and more efficient charging processes.
With its unique voltage withstand capability and high-efficiency conversion efficiency, Medium-Voltage MOSFETs provide strong support for the development of new energy vehicles.
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本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET SL10N10A,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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SLKOR MOSFET选型表
SLKOR提供以下参数的MOSFET选型,Vᴅss(V):-60~650,Vɢs(V):±8~±30,Iᴅ@Tᴄ=25℃(A):-70~100及多种不同的封装方式,如:SOT-23,SOP-8和TO-252-3不等
产品型号
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品类
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N/P
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Vᴅss(V)
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Iᴅ@Tᴄ=25℃(A)
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Pᴅ@Tᴄ=25℃(W)
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Vɢs(V)
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Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=4.5V)
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Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=2.5V)
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Package
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SL2333A
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MOSFET
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P
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-12
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-6
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1.2
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±8
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40
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50
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SOT-23
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选型表 - SLKOR 立即选型
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The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.
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品牌:SLKOR
品类:N-Channel Enhancement Mode Field Effect Transistor
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
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