Diotec‘s Power MOSFET DI100N10PQ in E-Bike Drives Offers Low losses and Longer Battery Life
Especially for summertime, more and more people are switching to e-bikes as an environmentally friendly alternative to the car, both for commuting to work and for leisure. In Germany alone, 2.2 million e-bikes were sold in 2022. The Power MOSFET DI100N10PQ from DIOTEC is used in the drive of high-performance e-bikes.
The success of the e-bike is essentially based on the development of lithium-ion batteries. The most powerful motors would hardly be of interest if the battery would not provide the system with important energy over many kilometers. An advanced e-biker needs a drive with around 300 to 400 watts and a torque of up to 85 Nm. Diotec's latest power MOSFETs DI100N10PQ, are the perfect solution for controlling the brushless DC motors used here. They offer a drain current of up to 100 A at a drain-source voltage of 100 V. The RDS(on) of only 4.5 mΩ ensures low losses and thus a longer battery life. And the QFN5x6 package guarantees that the six components used per drive take up very little space.
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本文由玄子转载自DIOTEC News，原文标题为:Power MOSFET DI100N10PQ in E-Bike Drives，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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The Power MOSFET DI100N10PQ-AQ in QFN5x6 package is the ideal choice for DC/DC converters, which are required to convert the voltage level of the solar panels to the caravan‘s battery voltage. Its low on-resistance and fast switching speed help to save power losses.
DIOTEC MOSFETs选型表
DIOTEC提供以下参数选型： Drain Source Voltage VDS[V]:-100~700、Drain Current ID[A]：-70~280、Junction Temperature Tjmax[℃]：150~175、Power Dissipation Ptot [W]：0.2~425、Peak Drain Current IDM [A]：-350~1200、Threshold Voltage VGSth[V]：-4~4.2、On-Resistance RDSon[Ω]：0.0013~15、On-Resistance ID[A]:-30~100、On-Resistance VGS[V]：-10~10、Turn-OnTime ton[ns]：3~1206、Turn-Off Time toff[ns]：7~991
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品类
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Type
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Package
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Drain Source Voltage VDS[V]
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Drain Current ID[A]
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Junction Temperature Tjmax[℃]
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Polarity pol
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Power Dissipation Ptot [W]
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Peak Drain Current IDM [A]
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Threshold Voltage VGSth[V]
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On-Resistance RDSon[Ω]
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On-Resistance ID[A]
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On-Resistance VGS[V]
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Turn-OnTime ton[ns]
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Turn-Off Time toff[ns]
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2N7000
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MOSFETs
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Wire-lead
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TO-92
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60
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0.2
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150
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N
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0.35
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0.5
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0.8
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5
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1
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10
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10
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10
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选型表 - DIOTEC 立即选型
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型号- JMSH1003NG-13,JMSH1003NG
Shindengen Developed Low Withstand Voltage Trench Structure MOSFET EETMOS Compact Package LF Series, Achieving both Lower Ron and Lower Qg
Shindengen has expanded its lineup with the development of the low withstand voltage trench structure MOSFET EETMOS LF Series, which is suited for use in various consumer and vehicle-mounted high current drive circuits, various power supply circuits, relay applications, and more.
JMSH0805PG 80V 3.4mΩN沟道功率MOSFET
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型号- JMSH0805PG-13,JMSH0805PG
Diotec（德欧泰克）MOSFET/三极管选型指南
型号- DI035P04PT,DIT050N06,DI050N04PT,2SA1012R,DI080N03PQ,DI035N10PT,DI015N25D1,DIT100N10,DIT090N06,DIT195N08,DI110N15PQ,DIT120N08,DI080N06PQ,DI150N03PQ,DI020N06D1,DI068N03PQ,DI045N03PT,DI040N03PT,2SC3851,DI028P03PT,2SC2983,DIT095N08,DI030N03D1,DI110N04PQ,DI010N03PW,DI045N10PQ,DI100N10PQ,DIT150N03,DI038N04PQ2,DI110N03PQ
SiC MOSFETs and SiC Schottky Diodes in TO-247-3L＆4L for Sustainable Public Transportation
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JMSH0803AGS 80V 3.2mΩN沟道功率MOSFET
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型号- JMSH0803AGS,JMSH0803AGS-13
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JMSH0803NGS 80V 3.2mΩN沟道功率MOSFET
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