The 60V/3A N-channel MOSFET SL3N06 Is Ideal for Small Household Appliance Battery Switch Applications

时间： 2024-04-09 来源：SLKOR News

技术问答

SLKOR SL3N06 is an N-channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3A. It is renowned for its low on-resistance (90mΩ@10V,3A) and relatively low threshold voltage (3V@250μA). These features make the SL2310 an ideal choice for switches and signal processing components in small household appliance applications, particularly where efficient and precise control is required.

Slkor Medium Voltage MOSFET product photo

Slkor Medium Voltage MOSFET specification

The Slkor SL3N06 is designed to operate stably at a voltage of 60V, making it suitable for the battery switch requirements of most small household appliances. With a drain current (I_o) of 3A, it demonstrates substantial current handling capabilities to meet the operational demands of small household appliances under high loads. Additionally, its low on-state resistance minimizes conduction losses, providing efficient switching functionality for batteries. This Medium Voltage MOSFET boasts high power and current handling capabilities, making it an ideal choice for battery switches in small household appliances. These appliances often require handling significant power and current during operation, and this MOSFET meets those demands, ensuring the stability and reliability of battery switches. Moreover, with a maximum operating temperature of +150℃@(T_j), it exhibits excellent thermal stability, enabling prolonged stable operation in high-temperature environments. The SOT-23 package enhances its flexibility and convenience during installation and use.

Parameters of Slkor Medium Voltage MOSFET

In small household appliance battery switch applications, the Slkor Medium Voltage MOSFET SL3N06 serves as a critical component for controlling power on/off, where the stability and reliability of its performance are paramount. Key technologies include well-designed driver circuits, heat dissipation measures, and the implementation of protection circuits. The design of the driver circuit ensures that the MOSFET can swiftly respond and maintain a stable operating state during switching processes. Heat dissipation measures effectively reduce the heat generated by the MOSFET during operation, preventing damage due to overheating. The implementation of protection circuits helps prevent damage to the MOSFET under abnormal conditions, thereby enhancing system reliability.

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