The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems
The SLKOR Medium Voltage MOSFET 2N7002E is an N-channel MOSFET featuring a 60V drain-source voltage and a continuous drain current of 300mA. It's renowned for its low on-state resistance (3Ω@10V, 500mA) and low threshold voltage (2.5V@250μA). The advantages of this Medium Voltage MOSFET in power management lie in its efficient, reliable, and flexible handling of current and voltage. It effectively enhances the efficiency, stability, and reliability of power management systems.
Slkor Medium Voltage MOSFET 2N7002E product photo
Slkor Medium Voltage MOSFET 2N7002E specification
The Slkor Medium Voltage MOSFET 2N7002E boasts a low on-state resistance (RDS(ON)), which helps to reduce energy loss during power conversion. In power management systems, a Medium Voltage MOSFET with low on-state resistance effectively minimizes energy loss and improves the efficiency of the power management system. Additionally, it possesses high power and current handling capabilities, enabling it to meet the demands of complex and rigorous power management requirements. In other words, it can maintain a stable operating state when dealing with high power or large current situations, ensuring a steady power output. The lead-free feature aligns with the environmental requirements of modern electronic products. The surface-mount package provides a convenient installation method, allowing for easy integration of the Medium Voltage MOSFET into power management systems.
Parameters of Slkor Medium Voltage MOSFET 2N7002E
The application prospects of the Slkor Medium Voltage MOSFET 2N7002E in power management systems are becoming increasingly promising with the continuous advancement of technology and the expanding market. On the one hand, as sectors such as new energy vehicles and industrial automation rapidly evolve, the demand for efficient and reliable power management systems will continue to grow. On the other hand, with the emergence of new materials and processes, the performance of this device will be further enhanced, leading to its wider and deeper application in power management systems. In summary, its collaborative operation with power management systems is crucial for achieving efficient and stable operation of equipment. By providing robust technical support through high-precision control of current switching and regulation, this device plays a key role in power management systems.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET 2N7002E,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
50A/60V N-Channel MOSFET SLM50N06T is Used for PWM Application, Load Switch, and Power Management
This Power MOSFET SLM50N06T is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been specially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
JST40GN80D5-Q 85V N沟道MOSFET
描述- 本资料介绍了JST40GN80D5-Q型号的N-Channel Mosfet的特性。该器件具有低导通电阻(RDS(ON) ≤ 14mΩ),适用于汽车照明系统和汽车系统等领域。它符合AEC Q101标准,并采用绿色环保材料(RoHS合规)。资料还提供了最大额定值、电气特性、典型性能曲线和封装尺寸图。
型号- JST40GN80D5-Q
SLKOR MOSFET选型表
SLKOR提供以下参数的MOSFET选型,Vᴅss(V):-60~650,Vɢs(V):±8~±30,Iᴅ@Tᴄ=25℃(A):-70~100及多种不同的封装方式,如:SOT-23,SOP-8和TO-252-3不等
产品型号
|
品类
|
N/P
|
Vᴅss(V)
|
Iᴅ@Tᴄ=25℃(A)
|
Pᴅ@Tᴄ=25℃(W)
|
Vɢs(V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=4.5V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=2.5V)
|
Package
|
SL2333A
|
MOSFET
|
P
|
-12
|
-6
|
1.2
|
±8
|
40
|
50
|
SOT-23
|
选型表 - SLKOR 立即选型
2SK3019 N沟道MOSFET
描述- 本资料介绍了2SK3019 N-channel MOSFET的特性。该器件具有低导通电阻和快速开关速度,适用于便携式设备。资料提供了最大额定值、电气特性、动态特性和开关特性等详细信息。
型号- 2SK3019
SM60N03B2 N沟道MOSFET
描述- 本资料介绍了SM60N03B2型号的N-Channel MOSFET产品。该器件具有低导通电阻(RDS(on))、高压耐压(V(BR)DSS)和高电流承载能力(ID)。它适用于DC/DC转换器、便携式设备的负载开关和电池开关等应用。
型号- SM60N03B2
WSD3072DN33 N沟道MOSFET
描述- 该资料介绍了WSD3072DN33型N沟道MOSFET的特性。这款器件采用先进的深沟槽技术,具有优异的导通电阻(RDS(ON))、低栅极电荷和最低4.5V的栅极电压操作能力。适用于电池保护或其他开关应用。产品符合RoHS和绿色环保要求,提供100% EAS保证。
型号- WSD3072DN33
FDN337N 30V/2.2A N沟道MOSFET
描述- 本资料介绍了FDN337N这款30V/2.2A N-Channel MOSFET的特性。该器件采用沟槽功率LV MOSFET技术,具有高密度单元设计以实现低RDS(ON),并具备高速开关能力。
型号- FDN337N
SM60N01B2 N沟道MOSFET
描述- 本资料介绍了SM60N01B2型号的N-Channel MOSFET产品。该器件具有低导通电阻、高压耐压等特点,适用于DC/DC转换器、便携式设备负载开关和电池开关等领域。
型号- SM60N01B2
SL3424 30V/3.8A N沟道MOSFET
描述- 该资料介绍了SL3424型30V/3.8A N-Channel MOSFET的特性。它采用沟槽功率LV MOSFET技术,具有高密度单元格设计以实现低RDS(ON),并具备高速开关能力。
型号- SL3424
WSD18N10DN33 N沟道MOSFET
描述- WSD18N10DN33是一款高性能的沟槽N-Channel MOSFET,具有极高的单元密度,提供优异的RDS(ON)和栅极电荷,适用于大多数同步降压转换器应用。该产品符合RoHS和绿色产品要求,100% EAS保证,功能可靠性经过批准。
型号- WSD18N10DN33
JST50GN80T2-Q 85V N沟道MOSFET
描述- 本资料介绍了JST50GN80T2-Q型N沟道MOSFET的特性、电气参数和应用领域。该器件具有低导通电阻、高开关速度和良好的热性能,适用于汽车照明、同步整流、电源管理和PWM应用。
型号- JST50GN80T2-Q
FDV305N 20V/0.9A N沟道MOSFET
描述- 本资料介绍了FDV305N是一款20V/0.9A N-Channel MOSFET。该器件具有低栅极电荷、低导通电阻等特点,适用于电池保护和负载开关等应用。
型号- FDV305N
JST35GN85D3-Q 85V N-Channel Mosfet
描述- 本资料介绍了JST35GN85D3-Q型N沟道MOSFET的特性。该器件具有低导通电阻(RDS(ON) ≤ 15 mΩ),适用于汽车照明、同步整流和PWM应用。它符合AEC Q101标准,并满足绿色产品(RoHS合规)的要求。
型号- JST35GN85D3-Q
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
登录 | 立即注册
提交评论