【选型】AD230-9 硅APD雪崩光电二极管助力905nm波长单线激光传感器光电接收设计
单线激光传感器选用的激光二极管发射的波长一般为905nm,与之匹配的APD雪崩光电二极管一般也需要可检测905nm波长,那么,APD实际选型时需要考虑哪些因素呢?
1、 考虑到APD支持的频率带宽是一个范围,一般为300nm~1700nm,更细划分为硅APD为300 nm~1100 nm、锗APD为800 nm~1600 nm、InGaAs APD为900 nm~1700 nm,可选择最高灵敏度为900nm的硅APD设计,建议选择加上带通905nm BP窄带滤波片(filter)可实现设计选型;
2、 确定APD使用的“最小尺寸”:有效的光学器件通常比使用的APD更具成本效益;
3、 确定系统所需的“频率带宽”:最重要的是,超过系统规格的带宽会降低系统的SNR。
针对如上设计需求,本文推荐选择国际上知名的FIRST SENSOR(TE收购)推出的硅APD雪崩光电二极管AD230-9,采用TO52封装,在900nm波段具有最高灵敏度,有效区域0.04mm2,其实物图和封装尺寸示意图参考如下图1所示。
图1:硅APD雪崩光电二极管AD230-9实物图和封装尺寸示意图
硅APD雪崩光电二极管AD230-9提供内置BP带通滤波片中心波长为905nm选型设计,BP穿透率>90%,其典型频谱响应曲线及中心波长635nm滤波片穿透率曲线示意图参考如下图2所示。
图2:硅APD雪崩光电二极管AD230-9频谱响应曲线及中心波长905nm滤波片穿透率曲线示意图
通过如上图示易知:
AD230-9可以提供不带滤波片的订单型号3001345,图示中蓝色曲线;同时,可以提供内置中心波长为905nm BP带通滤波片,订单型号3001429,图中绿色曲线,设计时可以免去客户自行设计BP带通滤波片。
下面,提供下硅APD雪崩光电二极管AD230-9光电参数,在环境温度23℃条件下,最大暗电流1nA,典型电容低至0.3pF,波长为905nm时最低响应度为52A/W,最小击穿电压160V,最大温度系数为1.55V/K,最佳增益放大倍数为50-60,工作温度范围为-40℃~100℃,典型光电特性参数参考如下图3所示。
图3:硅APD雪崩光电二极管AD230-9典型光电特性参数
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