The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications
The SLKOR Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.
Slkor Medium Voltage MOSFET BSS138 product photo
Slkor Medium Voltage MOSFET BSS138 specification
The Slkor Medium Voltage MOSFET BSS138 meets the voltage and current requirements of most LED driver circuits. With a maximum voltage rating of 50V, it's suitable for use in low to medium voltage applications, while its maximum continuous current rating of 220mA makes it suitable for driving medium-brightness LEDs. Additionally, its low on-state resistance results in minimal heat generation during conduction, thereby improving the overall efficiency of the LED driver circuit and showcasing its efficient current-carrying capability. Moreover, it features a low threshold voltage, which helps reduce power consumption in the driver circuit. Lastly, its maximum power dissipation during operation is 225mW, ensuring stability under normal operating conditions.
Parameters of Slkor Medium Voltage MOSFET BSS138
The Slkor Medium Voltage MOSFET BSS138 is highly suitable for LED driver circuits. The primary purpose of an LED driver circuit is to provide a stable current to the LED, ensuring its proper illumination. The medium voltage N-channel MOSFET, with its low on-state resistance and high efficiency characteristics, proves to be an ideal choice for achieving this objective. It functions as a switching device in the LED driver circuit, regulating the drain current by controlling the gate voltage, thereby enabling precise control of the LED current. When the gate voltage exceeds the threshold voltage, the MOSFET turns on, allowing current to flow from the source to the drain, thus driving the LED to emit light. Conversely, when the gate voltage falls below the threshold voltage, the MOSFET turns off, causing the LED to turn off as well.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由Vicky转载自SLKOR News,原文标题为:【Daily Highlight】The Medium Voltage MOSFET BSS138,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关研发服务和供应服务
相关推荐
The 200V/19A N-channel MOSFET IRF640, An Ideal Switching Component In the Motor Drive Systems of New Energy Vehicles
The IRF640 is an N-channel MOSFET with a 200V drain-source voltage and continuous drain current of 18A. It is known for its low on-state resistance (150mΩ at 10V, 11A) and relatively low threshold voltage (3V at 250μA). These characteristics make the IRF640 an ideal switching component in the motor drive systems of new energy vehicles, especially in situations requiring high efficiency and precise control. It is suitable for various medium-voltage switching and power control applications.
产品 发布时间 : 2024-03-30
The -60V/-30A P-channel MOSFET IRFR5305 Has Extensive Applications and Significant Advantages in the Small Home Appliance Sector
The IRFR5305 is a P-channel MOSFET with excellent performance parameters. It features a high drain-source voltage (-60V) and a large current carrying capacity (-30A), making it highly suitable for use in high-voltage, high-power circuit designs. Additionally, its low on-state resistance (26mΩ@-10V, -15A) and low threshold voltage (-1.8V@-250μA) ensure reduced power loss during operation. This device plays a crucial role in various electronic devices and circuits, providing strong support for enhancing the performance and improving the energy efficiency of electronic equipment and systems.
产品 发布时间 : 2024-03-28
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
产品 发布时间 : 2024-01-23
Nisshinbo(日清纺)车载用芯片选型指南(英文)
描述- "Nisshinbo Micro Devices Inc. is the result of the integration of former New Japan Radio Co., Ltd. and former RICOH Electronic Devices Co., Ltd. Both companies, having contributed to expanding the Nisshinbo Group's microdevices business so far, will further grow as an ""Analog Solution Provider"" for growing markets by strengthening structure and achieving synergies through business integration.
型号- R1515,R1516,R1513,R1514,R1517,R1518,NJU7089,R3134,R1511,R1510,R1191,NJG1187KG1,R1190,NSNJ9205,R1526,R1524,R1525,NJU7077,NJU7870,NSNJ9208,NA1150,NJU72040,R8156,R8153,R8152,R8155,RN5T569,R8154,R8151,RP550,R8150,NJG1814MD7,NJG1175KG1,NJU77701,NJG1159PHH-A,RP108,R3154,R3152,NJW4760,R8160,NJG1801AKGC-A,NJG1182UX2,R3120XXXXE,NJU7890,NSNJ9200A,R3120XXXXA,NJG1186PJL-A,R1540,R5106,R5107,NJG1804K64,R5108,R5109,NJG1150UA2,R5104,R5105,R3160,NJG1815AK75-A,NJU72015,NT1191GEAE3A,NL6012,R8315XXXXA,NV3601,R8315XXXXB,R8315XXXXE,R8315XXXXF,NV3600,R1276,NJG1681MD7,NJG1669MD7,NJG1155UX2,R1278,NJW4107,NJW4106,NJW1871,NR1640,NJW4105,NJW4104,R1272,NJM2369,R1273,R8300XXXXA,R1270,ND1433,R1271,R1150,MUSES8920A,R8300XXXXE,R8300XXXXG,NJM41001,NJM41005,R5524,R8359,R8358,NJG1684ME2,R5523,R8355,NJW4116,R8357,R8356,R1163,NJW4110,NJG1818K75,NJM2815,NJM2816,RP510,NJW4152BA,R3118,R3117,R3116,NJM2904B,NJM8208,NJG1144KA1,R1290,R1170,NJW4203,R1294,R1171,R1172,NT1193FAAE1S,NJM2903,R8360,NJU72060,NJU71091,NJG1801BKGC-A,NJU71094,R1500,R1501,R1180,R3119XXXA,NT1192FAAE1S,R3119XXXB,NJM2119,NP4271,NJM8532T1,RN5C750,R1114,R8300,NJW4148,NJW4142,NJW4140,NC2905,NJU77572,NJG1187AKGC-A,NJU8759A,NJU7907A,NJU7047T1,R1245,NJW4830,NJM11100,NJW4154,NJG1809ME7,RP154,NJU72090,NJM8080,NJU72097,NJG1802K51,NJM8087,NJW4119,RP506,R1130,NJM12884,RP170,RP171,NT1195FAAE1S,NJU77552,NJM8532,NJG1801K75,NL9000,R1260,NJW4133,NJW4254,NJW4132,NJW4250,NJU7046,NJU7047,NJU77242,R3119XXXXA,NJW4152-BA,R3119XXXXE,R5117,NJG1806K75,NJG1812MET-A,R5114,NJG1817ME4,R5115,NJW1871A,R5116,R5110,R5111,R3121XXXXG,R5112,RN5T5611,R3121XXXXA,NP8700,NT1191GEAE3S,NJG1815K75,R3121XXXXE,NJW4182,NJU7367B,NJU77252,R3151XXXXE,R3151XXXXF,MJU71091,R3151XXXXA,R1560,R1561,R3151XXXXB,NJW4868,R3500,NJW1241,NJW1240,NJG1812AMET-A,NJW4750,RP111,RP115,NJU77582,R1211,NJG1161PCD,NJW4722,NJW4841,NC2780,NJG1682MD7,NJU7907B,NR1700,NJU7057,R3150XXXXE,R3150XXXXF,R1580,NJU77903,NJM2879,RP130,NJW4175,RP132,NJW4171,R3150XXXXA,R3150XXXXB
What Is The Purpose of MOSFET?
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in electronic circuits. Due to their high input impedance, low power consumption, and fast switching speeds, MOSFETs play a crucial role in modern electronic devices. This article will explore the main applications of MOSFETs and their use in various fields.
技术探讨 发布时间 : 2024-10-17
轻松了解功率MOSFET的雪崩效应
在关断状态下,功率MOSFET的体二极管结构的设计是为了阻断最小漏极-源极电压值。MOSFET体二极管的击穿或雪崩表明反向偏置体二极管两端的电场使得漏极和源[敏感词]子之间有大量电流流动。典型的阻断状态漏电流在几十皮安到几百纳安的数量级。
设计经验 发布时间 : 2024-05-31
The 60V/50A N-channel MOSFET SL50N06D, Suitable for the Power Transmission System in BLDC Motor Control Systems
The SL50N06D is an N-channel MOSFET utilizing advanced Trench technology in its production. It features a high drain-source voltage (60V) and continuous drain current (50A), offering advantages such as high frequency, high current, and strong anti-impact capability. Additionally, its low on-resistance and low threshold voltage ensure reduced power loss during operation. This device delivers excellent switching performance, can withstand high-energy pulses under avalanche and commutation modes, providing reliable power control and efficient performance for circuit design.
产品 发布时间 : 2024-03-28
The Medium Voltage MOSFET IRF540NS with a Threshold Voltage (Vgs(th)) of 4.0V@250μA and Drain-source Voltage (Vdss) of 100V
The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in communication systems. The application of IRF540NS will further propel the development of communication technology, providing people with more convenient and efficient communication experiences.
产品 发布时间 : 2024-03-15
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论