The 50V/220mA N-channel MOSFET BSS138 with High Efficiency, Low Power Consumption and High Reliability Is Suitable for LED Driving Applications
The SLKOR Medium Voltage MOSFET BSS138 is an N-channel MOSFET with a drain-source voltage of 50V and a continuous drain current of 220mA. It is renowned for its low on-state resistance (3.5Ω@10V, 220mA) and low threshold voltage (1.6V@1mA). This MOSFET offers numerous advantages in LED driving applications, including high efficiency, low power consumption and high reliability. With careful design and selection, its role in LED driving circuits can be fully utilized, providing stable and efficient lighting solutions for modern electronic devices.
Slkor Medium Voltage MOSFET BSS138 product photo
Slkor Medium Voltage MOSFET BSS138 specification
The Slkor Medium Voltage MOSFET BSS138 meets the voltage and current requirements of most LED driver circuits. With a maximum voltage rating of 50V, it's suitable for use in low to medium voltage applications, while its maximum continuous current rating of 220mA makes it suitable for driving medium-brightness LEDs. Additionally, its low on-state resistance results in minimal heat generation during conduction, thereby improving the overall efficiency of the LED driver circuit and showcasing its efficient current-carrying capability. Moreover, it features a low threshold voltage, which helps reduce power consumption in the driver circuit. Lastly, its maximum power dissipation during operation is 225mW, ensuring stability under normal operating conditions.
Parameters of Slkor Medium Voltage MOSFET BSS138
The Slkor Medium Voltage MOSFET BSS138 is highly suitable for LED driver circuits. The primary purpose of an LED driver circuit is to provide a stable current to the LED, ensuring its proper illumination. The medium voltage N-channel MOSFET, with its low on-state resistance and high efficiency characteristics, proves to be an ideal choice for achieving this objective. It functions as a switching device in the LED driver circuit, regulating the drain current by controlling the gate voltage, thereby enabling precise control of the LED current. When the gate voltage exceeds the threshold voltage, the MOSFET turns on, allowing current to flow from the source to the drain, thus driving the LED to emit light. Conversely, when the gate voltage falls below the threshold voltage, the MOSFET turns off, causing the LED to turn off as well.
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本文由Vicky转载自SLKOR News，原文标题为:【Daily Highlight】The Medium Voltage MOSFET BSS138，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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型号- R1515,R1516,R1513,R1514,R1517,R1518,NJU7089,R3134,R1511,R1510,R1191,NJG1187KG1,R1190,NSNJ9205,R1526,R1524,R1525,NJU7077,NJU7870,NSNJ9208,NA1150,NJU72040,R8156,R8153,R8152,R8155,RN5T569,R8154,R8151,RP550,R8150,NJG1814MD7,NJG1175KG1,NJU77701,NJG1159PHH-A,RP108,R3154,R3152,NJW4760,R8160,NJG1801AKGC-A,NJG1182UX2,R3120XXXXE,NJU7890,NSNJ9200A,R3120XXXXA,NJG1186PJL-A,R1540,R5106,R5107,NJG1804K64,R5108,R5109,NJG1150UA2,R5104,R5105,R3160,NJG1815AK75-A,NJU72015,NT1191GEAE3A,NL6012,R8315XXXXA,NV3601,R8315XXXXB,R8315XXXXE,R8315XXXXF,NV3600,R1276,NJG1681MD7,NJG1669MD7,NJG1155UX2,R1278,NJW4107,NJW4106,NJW1871,NR1640,NJW4105,NJW4104,R1272,NJM2369,R1273,R8300XXXXA,R1270,ND1433,R1271,R1150,MUSES8920A,R8300XXXXE,R8300XXXXG,NJM41001,NJM41005,R5524,R8359,R8358,NJG1684ME2,R5523,R8355,NJW4116,R8357,R8356,R1163,NJW4110,NJG1818K75,NJM2815,NJM2816,RP510,NJW4152BA,R3118,R3117,R3116,NJM2904B,NJM8208,NJG1144KA1,R1290,R1170,NJW4203,R1294,R1171,R1172,NT1193FAAE1S,NJM2903,R8360,NJU72060,NJU71091,NJG1801BKGC-A,NJU71094,R1500,R1501,R1180,R3119XXXA,NT1192FAAE1S,R3119XXXB,NJM2119,NP4271,NJM8532T1,RN5C750,R1114,R8300,NJW4148,NJW4142,NJW4140,NC2905,NJU77572,NJG1187AKGC-A,NJU8759A,NJU7907A,NJU7047T1,R1245,NJW4830,NJM11100,NJW4154,NJG1809ME7,RP154,NJU72090,NJM8080,NJU72097,NJG1802K51,NJM8087,NJW4119,RP506,R1130,NJM12884,RP170,RP171,NT1195FAAE1S,NJU77552,NJM8532,NJG1801K75,NL9000,R1260,NJW4133,NJW4254,NJW4132,NJW4250,NJU7046,NJU7047,NJU77242,R3119XXXXA,NJW4152-BA,R3119XXXXE,R5117,NJG1806K75,NJG1812MET-A,R5114,NJG1817ME4,R5115,NJW1871A,R5116,R5110,R5111,R3121XXXXG,R5112,RN5T5611,R3121XXXXA,NP8700,NT1191GEAE3S,NJG1815K75,R3121XXXXE,NJW4182,NJU7367B,NJU77252,R3151XXXXE,R3151XXXXF,MJU71091,R3151XXXXA,R1560,R1561,R3151XXXXB,NJW4868,R3500,NJW1241,NJW1240,NJG1812AMET-A,NJW4750,RP111,RP115,NJU77582,R1211,NJG1161PCD,NJW4722,NJW4841,NC2780,NJG1682MD7,NJU7907B,NR1700,NJU7057,R3150XXXXE,R3150XXXXF,R1580,NJU77903,NJM2879,RP130,NJW4175,RP132,NJW4171,R3150XXXXA,R3150XXXXB
What Is The Purpose of MOSFET?
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in electronic circuits. Due to their high input impedance, low power consumption, and fast switching speeds, MOSFETs play a crucial role in modern electronic devices. This article will explore the main applications of MOSFETs and their use in various fields.
轻松了解功率MOSFET的雪崩效应
在关断状态下，功率MOSFET的体二极管结构的设计是为了阻断最小漏极-源极电压值。MOSFET体二极管的击穿或雪崩表明反向偏置体二极管两端的电场使得漏极和源[敏感词]子之间有大量电流流动。典型的阻断状态漏电流在几十皮安到几百纳安的数量级。
SLKOR MOSFET选型表
SLKOR提供以下参数的MOSFET选型,Vᴅss(V):-60~650,Vɢs(V):±8~±30,Iᴅ@Tᴄ=25℃(A):-70~100及多种不同的封装方式,如:SOT-23,SOP-8和TO-252-3不等
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产品型号
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品类
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N/P
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Vᴅss(V)
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Iᴅ@Tᴄ=25℃(A)
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Pᴅ@Tᴄ=25℃(W)
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Vɢs(V)
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Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=4.5V)
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Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=2.5V)
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Package
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SL2333A
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MOSFET
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P
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-12
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-6
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1.2
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±8
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40
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50
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SOT-23
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选型表 - SLKOR 立即选型
Diotec（德欧泰克）MOSFET/三极管选型指南
型号- DI035P04PT,DIT050N06,DI050N04PT,2SA1012R,DI080N03PQ,DI035N10PT,DI015N25D1,DIT100N10,DIT090N06,DIT195N08,DI110N15PQ,DIT120N08,DI080N06PQ,DI150N03PQ,DI020N06D1,DI068N03PQ,DI045N03PT,DI040N03PT,2SC3851,DI028P03PT,2SC2983,DIT095N08,DI030N03D1,DI110N04PQ,DI010N03PW,DI045N10PQ,DI100N10PQ,DIT150N03,DI038N04PQ2,DI110N03PQ
SLKOR Semiconductor Medium Voltage MOSFET SL68N08G, an Ideal Choice for High-performance Motor Drivers
The SL68N08G medium-voltage MOSFET from SLKOR Semiconductor is an important innovation achievement of ours. The SL68N08G is an N-channel MOSFET with a drain-source voltage of 80V, a continuous drain current of 68A, and an on-resistance of 6.4mΩ. This product features an advanced trench structure design, which ensures reliability and durability. This design not only improves the device‘s heat dissipation capability but also enhances the overall circuit efficiency. Additionally, this product is compliant with ROHS standards and is halogen-free.
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服务
可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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