SMC’s 1200V SiC Power MOSFET S2M0025120K is Selected in Everything PE‘s Top MOSFETs in 2023
Plainview, NY – SMC Diode Solution’s 1200V SiC Power MOSFET, S2M0025120K, has been selected as one of everything PE(everything PE is the leading online publication for the Power Electronics Industry)top MOSFETs in 2023.
The demand for power MOSFETs in the automotive, energy, and consumer electronics industries has increased due to the necessity for compact and sophisticated automation solutions. The adoption of the power MOSFET market as a growing application is expected to accelerate with the advent of electric vehicles. Power MOSFETs have been one of the renewable energy sources that are replacing conventional energy sources globally. In the article, everything PE listed the top power MOSFETs that were trending on the website, including SMC’s S2M0025120K MOSFET.
The S2M0025120K from SMC Diode Solutions is a SiC Power MOSFET that has been designed for energy-sensitive, high-frequency applications in challenging environments. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.1 V, and a drain-source on-resistance of 25 milli-ohms.
This MOSFET has a continuous drain current of up to 63A and a power dissipation of less than 446W. It has low switching losses and is provided with a very fast and robust intrinsic body diode that offers very low total conduction losses and stable switching characteristics with temperature. This RoHS-compliant MOSFET exhibits positive temperature characteristics and is suitable for parallel operations.
It is available in a through-hole package that measures 39.71 x 15.5 x 4.8 mm and is ideal for EV fast charging modules, EV on-board chargers, solar inverters, online UPS/industrial UPS, switch mode power supplies (SMPS), DC-DC converters, and energy storage systems (ESS) applications.
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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
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