The Chinese Silicon Carbide Epitaxial Wafers Market Is Both Pro
With the continuous expansion of demand for electric vehicles and new energy, the penetration rate of silicon carbide power semiconductor components in various fields is showing a continuous upward trend. For the silicon carbide epitaxial wafer process, the market has long been dominated by international giants such as Resonac and Wolfspeed. Chinese manufacturers Han Tiancheng and Tianyu Semiconductor have accumulated over 10 years and finally entered a period of rapid business growth with the new energy wave. In recent years, global market share has rapidly increased.
During this period, China's silicon carbide wafer manufacturing capacity and production capacity have also been steadily improving. Both pure wafer foundries and IDM companies have made good progress, which has also driven the rapid growth of demand for silicon carbide epitaxial wafers. According to TrendForce consulting analysis, the Chinese silicon carbide epitaxial wafer industry has entered a period of rapid growth since 2022. The overall market size has reached about 225 million US dollars in 2023 and is expected to rise to 1.482 billion US dollars by 2026.
As a key element in manufacturing silicon carbide epitaxial wafers, the importance of epitaxial equipment is self-evident. International equipment giants from traditional silicon and compound semiconductor industries such as ASM and Veeco have also made corresponding mergers and acquisitions to enter the field of silicon carbide epitaxial wafers, indicating their optimistic market prospects. Under the stimulation of downstream demand, Chinese silicon carbide epitaxial wafer manufacturers have launched several times their expansion plans, while new entrants continue to emerge, which has brought about strong demand for equipment installation. According to TrendForce consulting analysis, the market size of silicon carbide epitaxial equipment in China was approximately 181 million US dollars in 2023, and it is expected to climb to 424 million US dollars by 2028.
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本文由Vicky转载自RealChip News,原文标题为:The Chinese SiC epitaxial wafer market is both pro,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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Max RDS(on)(mΩ)@VGS=4.5V
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N
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7A
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20A
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15mΩ
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可定制Wafer连接器、牛角连接器、FPC/FFC 连接器,IDC 连接器的尺寸/规格等参数,电流不超过8A;环境温度:-40度~105度;寿命/拔插次数:不超过800次。
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