Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance.
EL SEGUNDO, Calif.— April, 2024 — EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC's 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design, delivering an impressive 700 W per channel into a 4 Ω load.
The EPC9192 features a modular design that allows for scalability and expandability. The motherboard hosts two PWM modulators and two half bridge power stage daughterboards, implementing a two-channel amplifier with housekeeping supplies and protections. This design flexibility enables users to customize the PWM modulator and power stage, facilitating the evaluation and comparison of different devices and modulation techniques.
Key features of the EPC9192 include:
700 W Class-D power stage in a compact size of 4 in3 including output filter and heatsink
Single regulated 12 V power supply input for housekeeping
Dual split supply input, unregulated, ±42 V to ±85 V for power stage
Analog inputs balanced (XLR) or unbalanced (RCA)
Configurable for two independent SE channels or single-channel BTL mode
Undervoltage, Overvoltage, Overcurrent, and Overtemperature protections
> 600 kHz switching frequency
Key performance measurements of the EPC9192 include:
700W@2Ω - 4Ω / 350W@8Ω / channel
BTL capable (1400W @ 4Ω - 8Ω)
< 0.005% THD+N, > 120dB SNR
Noise floor: 40µV
Frequency response: 5 Hz - 20 kHz +/- 0.5 dB, regardless of load
"The EPC9192 is a powerful tool for audio amplifier designers looking to leverage the benefits of GaN technology," said Alex Lidow, CEO of EPC. "With high-power density and scalability, it enables rapid prototyping of compact, high-performance Class-D amplifiers."
- |
- +1 赞 0
- 收藏
- 评论 0
本文由玄子转载自EPC News，原文标题为:Design High-Performance Class-D Audio Amplifiers with GaN FETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
BRC Solar Selects EPC 100V eGaN FETs for Next Generation Solar Optimizer
Designing EPC‘s EPC2218 100V FETs into BRC Solar GmbH‘s next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact.
The Power and Evolution of GaN: Bringing Precision Control to Surgical Robots with eGaN FETs and IC
Robotic surgical systems require a motor with high efficiency, minimal vibration, and precision control. eGaN FETs and ICs are ideal devices for sinusoidally modulated motor drives given their higher efficiency and higher operating frequency. eGaN FETs and ICs used in the motor control circuit yield higher precision and result in a more compact drive for the motors. This combination allows designers to design surgical robots that are more compact and with superior dexterity over MOSFET equivalent solutions.
【应用】基于eGaN FETs的150W/8Ω D类音频放大器应用案例
与MOSFETs相比，eGaN FETs的特性将使系统性能得到改善，显着提高了D类放大器的整体声音性能。EPC公司推出的EPC2016是高开关速度增强型GaN（eGaN）FET，与MOSFET相比具有更低的传导损耗，更快的开关速度和零反向恢复损耗，其应用于D类音频放大器时具有超高的音质和更高的经济效益。
EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型：配置：Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101，VDS最大值（V）：15~350V；VGS最大值（V）：5.75~7V
|
产品型号
|
品类
|
Configuration
|
VDSmax(V)
|
VGSmax(V)
|
Max RDS(on) (mΩ)
@ 5 VGS
|
QG typ(nC)
|
QGS typ (nC)
|
QGD typ (nC)
|
QOSS typ (nC)
|
QRR(nC)
|
CISS (pF)
|
COSS (pF)
|
CRSS (pF)
|
ID(A)
|
Pulsed ID (A)
|
Max TJ (°C)
|
Package(mm)
|
Launch Date
|
|
EPC2040
|
Enhancement Mode Power Transistor
|
Single
|
15
|
6
|
30
|
0.745
|
0.23
|
0.14
|
0.42
|
0
|
86
|
67
|
20
|
3.4
|
28
|
150
|
BGA 0.85 x 1.2
|
Apr, 2017
|
选型表 - EPC 立即选型
EPC GaN FET EPC9192让您实现高性能D类音频放大器，每声道输出功率达700W
EPC宣布推出EPC9192参考设计，可实现优越、紧凑型和高效的D类音频放大器，于接地参考、分离式双电源单端 (SE)设计中发挥200 V eGaN FET器件(EPC2307)的优势，在4Ω负载时，每声道输出功率达700W。
How to Design a 12V-to-60V Boost Converter with Low Temperature Rise Using eGaN FETs
This Talk EPC will examine the design of a 12V to 60V, 50W DC/DC power module with low temperature rise using eGaN FETs in the simple and low-cost synchronous boost topology.
eGaN FETs Are Low EMI Solutions!
GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI? In this blog, EPC discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.
What tacky flux can be used for assembling the EPC lead free (PbF) die?
EPC’s eGaN FETs and ICs can be mounted directly onto PC boards without added solder by using a tacky flux to hold the part in place while reflowing the solder. An example of an acceptable PbF process uses Kester TSF6502 no-rinse flux.
Envelope Tracking Power Supply for Cell Phone Base Stations Using eGaN® FETs APPLICATION NOTE
型号- ISO721MD,SN74LVC2G14,EPC2038,EPC8010,LM5113,EPC8000,TPP1000
eGaN® FETs and ICs for Medical Technology
型号- EPC2036,EPC2035,EPC2038,EPC2037,EPC2059,EPC2012C,EPC2014C,EPC2039,EPC2215,EPC9507,EPC9049,EPC90140,EPC2055,EPC2110,EPC9063,EPC9064,EPC9087,EPC90132,EPC9022,EPC2307,EPC9005C,EPC9004C,EPC2106,EPC2304,EPC2108,EPC2207,EPC2107,EPC8002,EPC9057,EPC9058,EPC90150,EPC8004,EPC9098,EPC9055,EPC9099,EPC9050,EPC90124
GaN Power Devices Achieve a High-Efficiency 48V, 1.2kW LLC Resonant Converter in a ⅛th Brick Size
EPC designed a 1.2kW resonant converter demo board (EPC9174) in an 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.
电子商城
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论