Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customization and high performance.
EL SEGUNDO, Calif.— April, 2024 — EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC's 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design, delivering an impressive 700 W per channel into a 4 Ω load.
The EPC9192 features a modular design that allows for scalability and expandability. The motherboard hosts two PWM modulators and two half bridge power stage daughterboards, implementing a two-channel amplifier with housekeeping supplies and protections. This design flexibility enables users to customize the PWM modulator and power stage, facilitating the evaluation and comparison of different devices and modulation techniques.
Key features of the EPC9192 include:
700 W Class-D power stage in a compact size of 4 in3 including output filter and heatsink
Single regulated 12 V power supply input for housekeeping
Dual split supply input, unregulated, ±42 V to ±85 V for power stage
Analog inputs balanced (XLR) or unbalanced (RCA)
Configurable for two independent SE channels or single-channel BTL mode
Undervoltage, Overvoltage, Overcurrent, and Overtemperature protections
> 600 kHz switching frequency
Key performance measurements of the EPC9192 include:
700W@2Ω - 4Ω / 350W@8Ω / channel
BTL capable (1400W @ 4Ω - 8Ω)
< 0.005% THD+N, > 120dB SNR
Noise floor: 40µV
Frequency response: 5 Hz - 20 kHz +/- 0.5 dB, regardless of load
"The EPC9192 is a powerful tool for audio amplifier designers looking to leverage the benefits of GaN technology," said Alex Lidow, CEO of EPC. "With high-power density and scalability, it enables rapid prototyping of compact, high-performance Class-D amplifiers."
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本文由玄子转载自EPC News,原文标题为:Design High-Performance Class-D Audio Amplifiers with GaN FETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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【应用】基于eGaN FETs的150W/8Ω D类音频放大器应用案例
与MOSFETs相比,eGaN FETs的特性将使系统性能得到改善,显着提高了D类放大器的整体声音性能。EPC公司推出的EPC2016是高开关速度增强型GaN(eGaN)FET,与MOSFET相比具有更低的传导损耗,更快的开关速度和零反向恢复损耗,其应用于D类音频放大器时具有超高的音质和更高的经济效益。
EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型:配置:Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101,VDS最大值(V):15~350V;VGS最大值(V):5.75~7V
产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
|
30
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0.745
|
0.23
|
0.14
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0.42
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0
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86
|
67
|
20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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选型表 - EPC 立即选型
EPC GaN FET EPC9192让您实现高性能D类音频放大器,每声道输出功率达700W
EPC宣布推出EPC9192参考设计,可实现优越、紧凑型和高效的D类音频放大器,于接地参考、分离式双电源单端 (SE)设计中发挥200 V eGaN FET器件(EPC2307)的优势,在4Ω负载时,每声道输出功率达700W。
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