Nisshinbo and KIT Have Started the Development of Radio Frequency Rectifier IC Focused on Microwave Wireless Power Transfer Systems
NISSHINBO Micro Devices Inc. and Kenji Itoh Lab, electrical and electronic engineering department, the college of Engineering, Kanazawa Institute of Technology (KIT), have started the development of Radio Frequency Rectifier ICs(RF rectifier ICs) focused on microwave wireless power transfer (WPT) systems.
In recent years, improvements of microwave WPT systems have been studied. It is accelerated due to the publication of the new radio regulation for the microwave WPT in 2022. In microwave WPT systems, it enables long-distance DC power transmission. In reception, an RF rectifier converts the received RF power to DC power for IoT sensors and FA equipment. RF power inputted to rectifiers is dependent on distance from the transmitter. Thus, a high-dynamic range rectifier is required for many kinds of use cases.
According to our survey, as rectifier ICs for microwave WPT systems(Microwave Wireless Power Transfer Systems) are still unreleased in the current IC market, researchers studying WPT employ general-purpose diodes in many cases. This makes insufficient rectification efficiencies for microwave WPT systems. This poses an obstacle to wider social implementations of microwave WPT systems.
KIT has developed two key technologies: high-efficiency rectification of low power promoted in the program “Scientific Innovation for Energy Harvesting Technology” led by Japan Science and Technology Core Research for Evolutionary Science and Technology; and high-efficiency rectification for 10-watt-class high-power promoted in the program “Energy systems of an Internet of Energy (IoE) Society” led by Cabinet Office Strategic Innovation Program.
Because of such a situation, NISSHINBO and KIT have started the development of RF rectifier ICs focused on microwave WPT systems. The ICs will be mass-produced for the smooth ramp-up of social implementations on microwave WPT systems.
The RF rectifier ICs are configured with gallium arsenide (GaAs) heterojunction field effect transistors (HJFETs). Combination of NISSHINBO unique GaAs wafer processing technology that can construct low-on-voltage and high-breakdown-voltage diodes with KIT’s leading-edge antenna and rectifier circuit technology will realize rectifier ICs that operate more efficiently in low to high-power regions than ever before.
Currently, the following two RF rectifiers are under development:
920-MHz-band Rectifier Operatable with Ultra-low Power
With a combination of the rectifier IC and the antenna designed by KIT, it achieves 21% higher peak efficiency and 5 dB higher sensitivity (which equals to 1.8 times longer transmission distance) than ones with conventional Si SBDs. Also, the breakdown characteristic is increased by 15 dB, which enables the IC to operate in the vicinity of the transmitter.
5.7-GHz-band 1 watt rectifier IC
This 1-watt IC can achieve efficiency of 20% or more at an input power of 1 mW and achieves maximum efficiency of 70 to 80% at an input power up to 1W.
In the future, NISSHINBO and KIT will research and develop RF rectifier ICs that achieve higher performance and correspond to various frequency bands and power bands in order to contribute to the social implementations of microwave WPT systems.
These research results will be Presentation and a corporate exhibition is also planned at the 2024 IEEE Wireless Power Technology Conference and EXPO(WPTCE2024) held at Kyoto University from May 8 through 11, 2024.
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本文由上山打老虎转载自NISSHINBO News，原文标题为:Development of Radio Frequency Rectifier IC Focused on Microwave Wireless Power Transfer Systems，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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型号- 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产品型号
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品类
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最大输入电压（V）
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输出电压精度（%）
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输出电流(mA)
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封装
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R1524H050B-T1-AE
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LDO Regulator
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3.5V
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36V
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±0.6%
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200mA
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SOT-89-5
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产品型号
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品类
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最小输入电压(V)
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最大输入电压（V）
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输出电压精度（%）
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封装
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拓扑结构
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NJW1871R
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DC/DC转换器
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2.5V
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40V
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1%
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MSOP10(VSP10)
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升压/回扫
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选型表 - NISSHINBO 立即选型
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产品型号
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品类
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最小输入电压(V)
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最大输入电压(V)
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输出电压精度(%)
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封装
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拓扑结构
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NJW1871R
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DC/DC转换器
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2.5V
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40V
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1%
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MSOP10(VSP10)
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升压/回扫
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选型表 - NISSHINBO 立即选型
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产品型号
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品类
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过充电检测电压min [V]
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过充电检测电压max [V]
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过充电检测精度 [mV]
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过放电检测电压min [V]
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过放电检测电压max [V]
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过放电检测电压精度[mV]
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放电过电流检测电压min [V]
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放电过电流检测电压max [V]
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放电过电流检测电压精度[mV]
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充电过电流检测电压min [V]
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充电过电流检测电压max [V]
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充电过电流检测电压精度[mV]
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消耗电流 [μA]
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封装
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R5405L291KD-TR
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Li-ion Battery Protection
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4V
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4.5V
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25mV
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2V
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3V
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50mV
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0.05V
|
0.2V
|
15mV
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-0.2V
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-0.05V
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30mV
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4μA
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DFN1814-6
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选型表 - NISSHINBO 立即选型
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整体外形尺寸小至0.6*0.3*0.3mm (DFN0603)，工作电压范围覆盖2.5V~36V，电容值低至0.2pF，浪涌能力最高可达240安培，静电等级可达空气放电、接触放电±30KV。提供免费浪涌测试仪、静电测试仪测试。
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