碳化硅MOS管（SiC-MOSFET）的特征
下图通过与Si功率元器件的比较，来说明SiC-MOSFET（碳化硅MOS管）的耐压范围。
目前SiC-MOSFET的应用范围通常是耐压在600V以上，尤其是1kV以上。下面将1kV以上的SiC-MOSFET与当前主流的Si-IGBT进行比较，看看它的优势。相对于IGBT，SiC-MOSFET在开关关断时降低了损耗，实现了高频率工作，有助于应用的小型化。与同等耐压的SJ-MOSFET（超级结MOSFET）相比，SiC-MOSFET的导通电阻更小，可以减少相同导通电阻的芯片面积，并显著降低恢复损耗。
下表是600V～2000V耐压的功率元器件的特征汇总。
注：雷达图的RonA为单位面积的导通电阻（表示传导时损耗的参数），BV为元器件耐压，Err为恢复损耗，Eoff为关断开关的损耗。
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本文由雪飘梦飞转载自SLKOR官网，原文标题为:碳化硅MOS管（SiC-MOSFET）的特征，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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目录- 公司介绍 碳化硅场效应管/碳化硅肖基特二极管/场效应管 超结场效应管/IGBT单管/可控硅 二极管 静电保护器件/瞬态抑制二极管 三极管/电源IC 运算放大器/达林顿晶体管阵列/整流桥/霍尔传感器 光耦/石英晶体谐振器
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SLKOR（萨科微）功率器件/二极管/三极管/电源管理芯片/霍尔传感器/光耦选型指南
描述- 深圳市萨科微半导体有限公司，技术骨干来自清华大学和韩国延世大学，以新材料新工艺新产品引领公司发展，掌握国际领先的第三代半导体碳化硅功率器件技术。萨科微产品包括二极管三极管、功率器件、电源管理芯片等集成电路三大系列。萨科微从一家IP设计公司已发展成为集设计研发、生产制造、销售服务一体化的国家级高新科技企业,“SLKOR”品牌在半导体行业声誉日隆。萨科微官网在展示萨科微产品、宣传“SLKOR”品牌的同时，也开展行业的技术交流、思想碰撞、信息交互、资料查询等，逐渐成为半导体行业内协同发展最重要的平台之一。
型号- BZT52C43S,SS110,MCR00-8,SMCJ440CA,SL11N65CF,MC34063S,ZMM200,PC817,SL2310,SL3400,SL1629SH,SL252030MXXX,RS1A,RS1M,GBU4005,DB107S,1N4148WS,SMF5.0CA,DSK32,SL40T120FL,SL1625SH,MMBT4401,LM317,SL36N120A,SL75T65FL,SL50328MXXX,MMSZ5259B,SL22N120A,SL2301,BT151,GBP210,SL2302,BT169D,SL49SM8M20P-20,1SMB5921B,SL1613SH,S2MF,SL49SM12M20P-20,2N7002,SL201624MXXX,BTA26-800,SL322540MXXX,S3AB,SL4949,GBU610,BFG520,SL252016MXXX,BZT52B2V4,BZT52B43,SL1605SH,ZM4727,1SMA4777A,SL1609SH,BTA41-800,GBU6005,SL21N65CF,SL25T120FL,BTA24-800,SD05C,SL4275,ULN2003,SL1613TH,ES2A,SS525,6N137,6N136,SL15N65CF,WE05DF-BS,ULN2803,BT138-800,SL78LXX,2SC3357,LM2575,6N135,ZMM2V0,LM2576,BZT52C2V4S,US1A,SMF5.0A,SMAJ170A,SL10N120A,S5MB,RS2A,RS2M,MMBT5551,US1M,SL80N120A,S8550,S2AF,SMBJ5.0C,M1,SS22,BSS123,M7,SS310,ABS210,MMBT3904,MMBT3906,SMF58CA,BT137-800,MM1Z39B,ABS201,SMCJ440A,SMAJ5.0CA,BTA12-600,BAV99,SS32,SMBJ5.0,SL1623SH,SMBJ170CA,SL201612MXXX,BSS138,SL322512MXXX,1SMB5956B,FR101,ES2J,SS12,SL3N170AP,1SS181,FR107,SMF58A,78MXX,SL50T65FL,SM15C,SL1619SH,LL4148,MM1Z2V2B,SMAJ5.0A,MMBTA05,SL14N120A,BC817,SS8050,DB201S,SL1615SH,S1A,LM321,S5AB,SMCJ5.0CA,DSK310,GBU410,SS210,BCP51,SL40T65FL,BCP53,S8050,S1M,B772,SMBJ170A,SL28N65A,MMBT2222A,SLM601,BTA16-800,AMS1117-XX,ZM4761,TL431,SS52,NUP2105LT1G,DB101S,SL322524MXXX,SL1603SH,IRF640,SD12C,S9013,GBP2005,SL3407,BZT52C39,SL7N65CD,SMCJ5.0A,BZT52C2V4,SL50N120A,S3MB,MMSZ5221B,SS8550,SL3415,SMAJ170CA,GBLC05CI,BAV21W,LM358S,DB207S,SL80N65CT,1SMA4728A
【经验】一文介绍IGBT单管与IGBT模块的区别
本文SLKOR介绍IGBT单管与IGBT模块的区别，IGBT模块可以看作是IGBT单管的功能改进和升级，它们的应用领域基本相同。但是，由于集成了各种驱动和保护电路，IGBT模块的安装极大地方便了用户。随着新包装技术的采用，拓展了IGBT的应用领域。
设计经验 发布时间 : 2022-01-22
线性锂电池充电芯片SL4054的参数是什么？可编程充电电流500mA，涓流充电电压2.9V
slkor SL4054是一款线性锂电池充电芯片，可编程充电电流500mA，充电电压固定在4.2V，涓流充电电压2.9V，本文讲述了关于它的主要参数和特性。
产品 发布时间 : 2024-08-22
【产品】萨科微推出单通道4A高速低侧栅极驱动器SL27517，非常适用于服务器和通讯电源的同步整流驱动
SLKOR SL27517是单通道4A的高速低侧栅极驱动器，可以高效安全地驱动MOSFET、IGBT 以及新兴的宽带隙功率器件。低传播延迟以及紧凑的SOT-23封装等特点，使得MOSFET的开关频率可以达到数百kHz。
产品 发布时间 : 2023-09-13
【经验】什么是双向IGBT及其使用IGBT驱动器的注意事项
双向IGBT是业界针对常规IGBT在各种应用中的一些不足而提出的一种新型五层四段结构的双向IGBT功率半导体器件。其核心是采用基于平面门IGBT的对称机构和双向输入控制方法，达到新装置双向控制的目的。
设计经验 发布时间 : 2022-01-13
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品牌：数明半导体
品类：Single-Channel, High-Speed, Low-Side Gate Driver
价格：￥0.7059
现货： 5,964
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定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
最小起订量： 1片 提交需求>
可烧录IC封装SOP/MSOP/SSOP/TSOP/TSSOP/PLCC/QFP/QFN/MLP/MLF/BGA/CSP/SOT/DFN；IC包装Tray/Tube/Tape；IC厂商不限，交期1-3天。支持IC测试（FT/SLT），管装、托盘装、卷带装包装转换，IC打印标记加工。
最小起订量： 1pcs 提交需求>
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
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