为什么SiC MOSFET需要更高的驱动电压?
各位工程师应该已经发现了,我们在使用Si MOSFET的时候,只需要使用10V的驱动电压就可以了,但是换成SiC MOSFET的时候,我们需要更高的驱动电压,一般会达到15-20V之间。这就使得我们在使用SiC MOSFET去替代Si MOSFET的时候需要对驱动电路的驱动电压进行一个调整之后才能使用。
那么到底是什么原因,不得不大费周章去使用成高的驱动电压来驱动SiC MOSFET呢?
首先,我们来看下SiC MOSFET和Si MOSFET的转移特性曲线对比,Si MOSFET当VGS达到8V之后,即使继续增大VGS,SJ-MOSFET也无法输出更大的电流了。这就说明就算我们去使用超过10V的驱动电压也没办法再进一步提升SJ-MOSFET的通流能力。SiC MOSFET的IDS如图所示,是一直随着VGS的增大而增大的。
转移特性上的一点区别也会体现在输出特性上。Si MOSFET当VGS大于8V的之后,输出特性曲线基本是重合的,这与转移特性曲线在VGS大于8V完全水平这一特征吻合。SiC MOSFET即使驱动电压高于15V,而不同VGS下的曲线依旧有非常明显的间隔。只有使用更高的驱动电压我们才能获得更小的 RDS(on),充分挖掘SiC MOSFET的通流能力。但是Si MOSFET就没这个需求了。
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各位工程师应该已经发现了,我们在使用Si MOSFET的时候,只需要使用10V的驱动电压就可以了,但是换成SiC MOSFET的时候,我们需要更高的驱动电压,一般会达到15-20V之间。这就使得我们在使用SiC MOSFET去替代Si MOSFET的时候需要对驱动电路的驱动电压进行一个调整之后才能使用。
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应用方案 发布时间 : 2024-08-30
【选型】无锡紫光微(UNIGROUP)半导体功率器件(半导体场效应管/MOSFET/晶体管/IGBT/IGTO)选型指南
目录- 超结功率MOSFET(SJ MOSFET) 金属氧化物半导体场效应管 沟槽式金属氧化物半导体场效应管 双沟槽金属氧化物半导体场效应管 IGBT 绝缘栅双极型晶体管 IGTO 集成发射极可关断晶闸管 SiC SBD & SiC MOSFET GaN MOSFET 半桥驱动电路
型号- TPD60R1K0C,TMP11N60H,TPA70R1K5M,TCW20N120AD,TMD4N50H,TPV60R350C,TSB15N10A,TPU50R5K0D,TPW60R075C,TMA9N70H,TPR60R580C,TPB70R135MFD,TPW60R160M,TTB95N68A,TPU65R600M,TMP20N40H,TMP12N65H,TMA8N90H,TMJ2N50HF,TMU3N55LT,TTD100N04AT,TPP80R300MFD,TMS05P35H,TPU65R600C,TPW90R350A,TMP30N25H,TCW65R036A,TC21814,TPD65R4K3C,TMP12N65M,TMA12N50HF,TMD5N30H,TMA8N50HFE,TCW65R145A,TMP10N80H,TPP65R380C,TPA60R260MFD,TMW35N60H,TPW55R060D,TPV60R240M,TTD85N03AT,TPA70R600M,TPD5QR690C,TPD50R5K4CT,TPW65R044MFD,TMU6N60H,TPD65R450CFD,TMP12N40H,TPA110R550A,TTU03P06ATS,TPU65R1K5M,TSP180N03A,TPY70R1K5C,TMA9N95H,TPA65R940C,TMA4N100H,TPA65R2K2C,TPA70R1K5C,TMU2N55CT,TMA8N50HF,TMA8N50HE,TTP90N03AT,TMU5N80H,TPP80R750C,TMA8N50HH,TPU73R400M,TMP12N43H,TMA13N65H,TMX05P35H,TTX2305A,TPB60R580C,TPU60R7K5C,TCW12N120AD,TPD65R2K7C,TMA20N60H,TTP115N08A,TPV65R085CFD,TPA65R190MFD,TPU65R1K2C,TPP65R160C,TMW3N150H,TPB65R300MFD,TPW50R060DFD,TMA12N60M,TC2108,TC2106,TPP100R500A,TPU65R950M,TMP20N65H,TC2104,TPD65R280D,TMA4N55LT,TPW100R800A,TMA12N60H,TC2103,TPU70R700C,TMU8N65H,TC2101,TPP70R260M,TMV25N55H,TPV70R190MFD,TPC80R1K2C,TPB65R750C,TPD65R2K6C,TCP3N65A,TPA60R170MFD,TPV70R090M,TMA3N55HT,TPA80R250A,TSG10N06A,TPU55R6K5C,TPA50R700C,TSJ10N06AT,TPA73R300M,TC2117,TC2118,TFA120R800A,TPU50R5K4C,TC2113,TSU10N06A,TMP30N10HT,TTB65N10A,TTJ12N04AT,TC2110,TPA65R170M,TSP12N06A,TPC60R150C,TMA8N70H,TPB50R400C,TTU05P03ATS,TMC6N70H,TMP15P20H,TPP60R260MFD,TSD12N06AT,TMW9N90H,TPP60R600MFD,TMP13N40H,TPW70R120M,TMD7N53HE,TMP1N60C,TMP140N10A,TPP65R360M,TMR12N50H,TTD18P10AT,TPA65R280D,TPV73R300M,TMB160N10A,TMP110N06H,TPW65R100MFD,TTU01P10ATS,TPD55R2K1C,TMD2N70H,TMD3N50H,TSG10N06AT,TMA4N120H,TPU50R360D,TMP12N60H,TPD60R1K4M,TMP12N60M,TMU1N50LT,TMA12N65H,TMA10N80H,TTU08N02ATS,TPA70R950C,TPA70R950M,TMP9N90H,TPA60R330M,TMA12N65M,TMU7N65H,TCP4N65A,TC2136,TPC80R1K5C,TMA11N60H,TMP2N60H,TMA3N120H,TMU4N80H,TPD70R360M,TTG130N03GT,TPU50R250C,TTP70N07A,TPP70R170M,TPV50R060C,TPY70R1K4C,TPB65R1K2C,TPC60R700C,TMU4N40HT,TPA70R1K4C,TMA4N55HT,TMV2N60HF,TPA50R2K3C,TCW50N65A,TPD65R940C,TPG65R365MH,TMV9N90H,TMA13N68H,TPB65R090M,TMU03N60HT,TPD60R840C,TPD65R2K2C,TPU70R2K8C,TTP95N68A,TPP65R600M,TMA4N60H,TMU1N50HT,TPC65R380C,TPD70R1K5M,TMA40N20H,TPD60R1K8C,TMA3N80H,TPP65R070D,TTP100N04AT,TSG010N03AT,TPA100R500A,TTD120N03AT,TPP65R075DFD,TPP65R600C,TMU8N60H,TPC50R690C,TMA4N60N,TMA4N60L,TMA4N60M,TPB80R300CFD,TPP65R950M,TMU08N50HT,TPW60R036M,TTD65N04AT,TMP162N04H,TPP60R2K5C,TPA60R600MFD,TPP70R700C,TPA80R300A,TMU1N50C,TPP80R1K2C,TPA80R300C,TPW80R300C,TPB65R400MFD,TMU1N50H,TMV8N120H,TMD2N50H,TPC70R260M,TMB120N08A,TPA65R520D,TMP120N08A,TPB100R800A,TPP60R700C,TPD70R950M,TMA12N45H,TMA10N60M,TMA10N60N,TMA2N50HF,TMU2N55L,TPD70R950C,TMD2N50CF,TPP65R700MFD,TMA10N60H,TMW6N90H,TMP50N06HT,TPD80R2K2C,TSG10N06ATC,TPP70R190C,TPP80R1K5C,TPW110R800A,TPW5QR065CFD,TPP110R550A,TPA65R9K2C,TMP25N055H,TPP65R1K2C,TMD5N50NF,TTP120N02GT,TMP6N90H,TFU65R280D,TTG40P02ATC,TPD60R1K7C,TMA18N70H,TMA1N60H,TPU65R380C,TPD70R600M,TMP16N25H,TPU80R750C,TTU04N08ATS,TPW70R300MFD,TPA50R500C,TTD28P10AT,TMA11N65H,TMP8N50L,TPA60R1K0C,TMA4N60HF,TPD70R1K5C,TMP8N50H,TMA9N90H,TPV100R500A,TMD8N60H,TCW30N65A,TMP20N60H,TPD65R400MFD,TPU55R2K9C,TMB140N10A,TPC65R360M,TMA3N60H,TMU9N20H,TPU50R1K8C,TPV80R300CFD,TMP38N30HF,TPB70R120M,TPA60R530M,TMP5N100H,TMA5N20H,TPA73R190M,TPR70R120M,TPU60R600MFD,TPV73R190M,TPU60R2K2C,TPC50R250C,TMA25N50C,TTP118N08A,TMU7N60H,TMP3N100H,TMU7N60L,TMU1N50CT,TMY1N60H,TMP1N20H,TSB12N10A,TCP6N65A,TSU12N06A,TMS1N5QLT,TPD55R2K9C,TMA25N50H,TPP60R360MFD,TMC10N65H,TMY1N60B,TPP50R500C,TPB70R400MFD,TPW70R044MFD,TC21844,TMA10N40L,TTD135N68A,TMW9N95H,TPU50R1K6C,TPV65R080C,TTB80N04AT,TSP045N10A,TPU80R1K2C,TMA10N40H,TMD7N60HF,TPP60R190A,TMA85N08H,TMP15N40H,TTK8205,TPB90R350A,TPC60R350C,TMA12N50NF,TPA120R1K5A,TTG65N10A,TTP115N68A,TMA10N65N,TSP12N10AT,TPB70R450C,TPP65R1K5M,TMA10N65H,TC2304,TPU50R1K5C,TMA10N65M,TPC60R240M,TMA18N50H,TPD60R3K4C,TMA2N60C,TMA2N60H,TCW65R275A,TPB65R380C,TPR65R260M,TMU5N50CF,TPA80R1K2C,TPA65R400MFD,TMV28N55H,TPP80R270M,TMW57N10H,TMA16N60H,TMD8N55HE,TPA65R280DFD,TPP60R580C,TTP150N02GT,TMU3N50H,TSP15N06A,TPP120R800A,TMC10N60N,TPW50R065CFD,TPA70R190MFD,TMP6N40H,TTD120N02GT,TMC10N60H,TMU2N70H,TTP120N03AT,TMU6N60HF,TTJ05P04AT,TMP8N25H,TMU2N70L,TMU5N30HT,TPA70R450C,TMA9N20HT,TMP2N50HT,TMU2N70N,TPC65R940C,TCW20N120A,TPB65R100MFD,TMA18N20H,TPU60R3K4C,TMV10N90H,TMU02N15AT,TPA80R300CFD,TSU12N10AT,TPW60R260MFD,TPC70R1K5C,TMA25N55H,TMA4N90H,TPV60R190A,TMU1N55LT,TMW45N50HF,TPA55R2K1C,TPA60R3K4C,TPD50R500C,TCW120R052A,TC2103A,TPC70R950C,TMA3N50LT,TMD8N50H,TPA60R160M,TSG12N06AC,TTP60N10AT,TMA7N55H,TMP7N65M,TPA65R450CFD,TMA5N70H,TPR70R360M,TPA80R1K5C,TSP15N08A,TPU60R1K7C,TMA7N50LF,TPV60R080M,TMD9N20LT,TSG12N06AT,TCW60R320A,TPC70R1K4C,TMU4N55C,TPY70R1K5MB,TPW65R170M,TMA2N120H,TPW110R500A,TMA6N50H,TPU80R1K5C,TMU2N50HT,TMS1N40HT,TMP16N65H,TTP55N12A,TPA80R180M,TPU60R1K8C,TMV20N65H,TSD10N06AT,TPP65R280DFD,TMD7N70H,TPW50R055D,TPD50R700C,TMV3N150H,TMZ1N60B,TMP2N50CT,TPC65R170M,TPW60R120MFD,TPB65R360M,TMW25N50H,TPP50R1K8C,TTG60N03QTC,TPA70R120M,TPP80R300CFD,TM
技术分享 | 解析SiC MOSFET串扰特性
随着SiC MOSFET开关频率的不断增加,在半桥结构(如逆变电路、全桥电路等)桥臂串扰现象越发严重,易造成桥臂直通短路或影响可靠性,限制了SiC MOSFET开关频率及系统功率密度进一步提高。本文瑶芯微将为您解析SiC MOSFET串扰特性。
技术探讨 发布时间 : 2024-08-10
Residential Solar Solutions
型号- 7000,SMBJ,L75QS,M3,SPD,TMOV,SPF,SPE,HV,LSIC1MO170E0750,CLASS RK5,X3-CLASS,CLASS T,SMBJ30CA,CLASS J,DSI,SM7,SPD TYPE 2,DSP,MIXA,ULTRAMOV,IXD_6XXSI,1500V POLAR,SPXI,SP712,SP2555NUTG,SMF,ES,X2-CLASS,RA,1200 V DIODE,MIXG,RB,LPHV,X CLASS,324,369,DLA,LSIC1MO120E0120,SP3130,IXDN604SIA,650 V TRENCH,IX4351NE,SPXV,SM20,IXG*N170(A),SM15-02HTG,SPD2 PV,SMDJ,SPFI,SPFJ,SM712,CG3,1.5SMC,CG2,CG4,650V X2-CLASS,DSEI,215,KLKD,HIGH VOLTAGE SERIES,KSC,DSEP,XPT,TRENCH GATE GEN2,CG,XTREME,SMCJ,KR,ULTRA-JUNCTION X2,KSR,SMBJ18CA,LA,1200,IX4427,IXDN602SIATR,650V X3-CLASS,650V DIODES,SIC1MO170E1000,X4-CLASS
【技术】三电平SI IGBT和两电平SiC模块联手实现高效整流逆变
将SiC和三电平IGBT配合使用,将SIC的MOSFET用于前端的PFC电流中,三电平IGBT可以用于逆变中,这样更能提高整个系统的效率。
原厂动态 发布时间 : 2016-02-26
【方案】125kW(1500VDC系统)光伏逆变器优选器件方案
描述- 本方案基于 1500VDC 系统,提出了在 BOOST 电路采用高集成度对称式 BOOST 模块,内置全 SiC MOS 和二极管,以提高开关频率和减小升压电感体积。在逆变电路采用 NPC 拓扑结构,耐压高达 2400V,在满足1500V 系统耐压需求的基础上,采用了低耐压的 IGBT,实现了较高的开关频率,有利于光伏逆变器实现更高的效率和更小的体积。
型号- TFLEX HD300,C3M0065090D,C2M1000170D,10-F124NID150SH03-LG18F98,10-F124NIE150SH03-LG28F98,RA-8565SA,PS9402,MLX91208,10-F124NIX150SH03-LGX8F98,28R1101-000,28R0610-000,LSIC2SD120E30CC,28R1476-100,92ML,TPCM780,RC12-6-01LS,SMBJ18CA,KT05-1A-BV88622,28R1953-000,28B0141-000,WGM110,R5F56514FDLJ,WM 4C,C4D30120D,10-FY09S2A065ME-L869L08,SID1152K,SI8621BD-B-IS,SI8261BCD-C-IS,SID11X2K
扬杰科技2024慕尼黑上海电子展回顾,展示新能源汽车、光伏逆变器、储能逆变器等多元领域的产品解决方案
2024年7月8-10日,为期三天的慕尼黑上海电子展圆满落幕,扬杰科技凭借卓越先进的展品、行业应用解决方案、独具一格的展台设计,现场销售人员、FAE、PM、行业经理等进行专业接待交流,吸引大量新老客户来现场进行互相交流探讨,展会现场人流如织,使得扬杰科技成为本次展会一大亮点。
原厂动态 发布时间 : 2024-07-13
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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