SiC MOSFET桥式结构的栅极驱动电路

时间： 2024-07-19 来源：SLKOR官网

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LS（低侧）侧SiC MOSFET在Turn-on和Turn-off时的VDS和ID变化方式不同。在讨论SiC MOSFET的这种变化对Gate-Source电压（VGS）的影响时，需要考虑包括SiC MOSFET的栅极驱动电路在内的等效电路。

下图展示了最基本的栅极驱动电路和SiC MOSFET的等效电路。栅极驱动电路包括栅极信号（VG）、SiC MOSFET内部的栅极线路内阻（RG_INT）、封装的源极电感量（LSOURCE）、栅极电路局部产生的电感量（LTRACE）和外加栅极电阻（RG_INT）。

在等效电路图中，以栅极电流（IG）和漏极电流（ID）的方向为正，以源极引脚为基准来定义VGS和VDS的极性。

SiC MOSFET内部的栅极线路中也存在电感量，但相比LTRACE较小，因此可以忽略。

导通(Turn-on) / 关断(Turn-off)动作

为了理解桥式电路的Turn-on和Turn-off动作，以下对上述文章中提到的SiC MOSFET的电压和电流波形进行详细说明，这些波形与前述相同，结合等效电路图进行解释。

当LS侧的栅极信号施加正向VG使LS侧ON时，Gate-Source间电容（CGS）开始充电，VGS升高，当达到SiC MOSFET的栅极阈值电压（VGS(th)）以上时， LS的ID开始流动，同时从源极流向漏极的HS侧ID开始减少（波形图T1）。

接着，当HS侧的ID变为零且寄生二极管Turn-off时，中间点电压（VSW）开始下降，同时对HS侧的Drain-Source间电容（CDS）及Drain-Gate间电容（CGD）进行充电（波形图T2）。充电（LS侧放电）完成后，当LS侧的VGS达到指定电压值，LS侧的Turn-on动作完成。

Turn-off动作从LS侧VG OFF时开始，LS侧的CGS蓄积电荷开始放电，当达到SiC MOSFET的平台电压（进入米勒效应区）时，LS侧的VDS开始上升，同时VSW上升。

在这个时间点，大部分负载电流仍在LS侧流动（波形图T4），HS侧的寄生二极管还没有开始导通。LS侧的充电（HS侧放电）完成后，VSW超过输入电压（E），HS侧的寄生二极管Turn-on，LS侧的ID开始流向HS侧（波形图T5）。

LS侧的ID最终变为零，进入死区时间（波形图T6），当正向VG被施加到HS侧MOSFET的栅极信号时Turn-on，进入同步工作时间（波形图T7）。

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本文由雪飘梦飞转载自SLKOR官网，原文标题为:SiC MOSFET桥式结构的栅极驱动电路，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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