Recommendation of 17 Silicon Carbide MOSFET Products from Huaxuan Yang Electronics- Industrial and New Energy Vehicle Fields

Huaxuan Yang Electronics: Recommendation of 17 Silicon Carbide MOSFET Products - Industrial and New Energy Vehicle FieldsWith the continuous iteration and innovation of technology,

silicon carbide (SiC) power devices have shown strong competitive advantages in the global industrial and new energy vehicle fields. Today, I will analyze and recommend 17 high-performance silicon carbide MOSFET product lines developed and produced by Huaxuan Yang Electronics company. These products, with their excellent VDSS, RDON, and ID parameter ranges, as well as the TO247 packaging form, provide the best solutions for different application needs.


Product Overview
-Voltage level VDSS: ranging from 650V to 1700V, covering a wide range of requirements for medium and high voltage power conversion systems.
-Conduction resistance RDON: Between 16 milliohms (mR) and 160 milliohms, it achieves lower conduction losses and is particularly suitable for high-efficiency power conversion systems, significantly improving system energy efficiency.
-Maximum leakage source current ID: ranging from 19A to 120A, meeting the current processing capacity requirements of power conversion equipment from small to large.
-Packaging form: Mainly using industry standard TO247 packaging to ensure good heat dissipation performance and compatibility with circuit board layout.

Next, we will further elaborate on several representative product models and their application scenarios:
Case 1: Application of Low Conduction Resistance in Charging Stations. Huaxuan Yang Electronics HC3M0032120K "SiCMOS 1200V-32mR-63A" has an extremely low 32 milliohm on resistance and a current carrying capacity of up to 63A, making it suitable for the design of fast charging stations. It effectively reduces energy loss during the charging process, improves charging efficiency, and reduces volume, helping the rapid development of the electric vehicle industry. 

Case 2: High voltage stable application in inverters. For applications that require high voltage resistance, such as the main drive inverter of new energy vehicles, choosing the HC2M0045170D "SiC MOS 1700V-45mR-72A" product is an ideal choice. This device can maintain stable performance at a working voltage of up to 1700V, while also having moderate conduction resistance and high current capacity, which helps to achieve efficient driving and reliable operation of vehicle motors. 

Case 3: Advantages of Compact Design in Photovoltaic Inverters. Optimizing space and cost is crucial in solar inverters. Choosing HC3M0015065K: "SiC MOS 650V-15mR-120A" with its low on resistance and moderate operating voltage ensures conversion efficiency while reducing the overall size and heat dissipation requirements of the scheme, greatly improving the utilization rate of photovoltaic energy. 

The above are only some representative cases, and each carefully designed silicon carbide MOSFET product has undergone rigorous testing and practical verification, aiming to adapt to diverse market applications. Whether in the fields of smart grids, rail transit, or industrial automation, these products can bring unprecedented energy efficiency upgrades and cost savings to customers with their excellent high-temperature performance, fast switching speed, and long lifespan.Visit the official website www.hxymos.com to obtain more detailed specifications and technical information about these 17 silicon carbide MOSFET products to meet your customized needs in specific projects.