当SiC MOSFET桥式电路开关时产生的电流和电压是怎样的?

2024-07-20 SLKOR官网
SiC MOSFET,SLKOR SiC MOSFET,SLKOR SiC MOSFET,SLKOR SiC MOSFET,SLKOR

这里展示的电路图是SiC MOSFET桥式结构同步式升压电路,在LS开关导通时的示例。桥式电路图中包括SiC MOSFET的寄生电容、电感、电阻,以及HS和LS SiC MOSFET的VDS和ID变化所产生的各处栅极电流(绿色线)。



ID变化带来的电压变化

ID的变化将会产生如下所示的电压公式(1):


这是因为存在于SiC MOSFET源极的寄生电感中流过ID而产生的电压,由电路图中的(I)引起。这个电压会使电流(I)流过。


VDS变化带来的电流变化

以HS为例,当SiC MOSFET关断、VDS变化时,Gate-Drain寄生电容CGD中会产生电流ICGD。如电路图所示,这个电流分为Gate-Source寄生电容CGS侧流过的电流ICGD1:(II)-1和栅极电路侧流过的电流ICGD2:(II)-2。当VDS开始变化时,栅极电路侧的阻抗较大,因此大部分ICGD都在CGS侧,此时的ICGD1如公式(2)所示。


从公式中可以看出,当CGD较大时或CGD/CGS的比值变小时,ICGD1会增加。


dVDS/dt和dID/dt既可以为正也可以为负,因此它们产生的电流和电压在导通(Turn-on)和关断(Turn-off)时的极性是不同的。


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本文由雪飘梦飞转载自SLKOR官网,原文标题为:当SiC MOSFET桥式电路开关时产生的电流和电压是怎样的?,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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高热流密度液冷板定制

定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

最小起订量: 1片 提交需求>

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
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