Structure and Principle of N-channel Depleted Field Effect Transistor (MOS)
In this article, LX MICRO will introduce the structure and principle of the n-channel depleted field effect transistor (MOS).
The depleted MOS FET is fabricated by doping a large amount of positive ions into the insulating layer of the silicon dioxide, thus, even without a voltage applied to the gate (UGS = 0), due to electrostatic induction, the field generated by these positive ions can“Induce” enough negative charge in the p-type substrate to form an“Inversion layer”, n-type conductive channels are produced.
When a positive voltage is applied to the gate (UGS > 0), the channel widens and the ID increases, whereas when a negative voltage is applied to the gate (UGS < 0), the channel narrows and the ID decreases. When the gate negative voltage reaches a certain value VP (pinch off voltage). Will make the inversion layer disappear, ID = 0.
FET is short for Field-effect transistor. There are two main types of junction FET-JFET and mos-FET. Most carriers conduct electricity, also known as unipolar transistors.
What Are the Advantages of Mos Fet?
Field-effect transistors (MOS) are voltage-controlled semiconductor device. It has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown and wide safe operating area range.
Characteristics of FET:
1. FET is a voltage control device. It controls the ID (drain current) through VGS (gate source voltage) .
2. The control input current of FET is very small, so its input resistance is very large.
3. It uses most carriers to conduct electricity, so its temperature stability is good.
4. The voltage magnification factor of the amplifier circuit is smaller than the voltage magnification factor of the amplifier circuit composed of the triode.
5. Fet has strong radiation resistance.
6. The noise is low because the diffusion of the moving electrons causes no shot noise.
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本文由上山打老虎转载自LXMICRO Official Website,原文标题为:Structure and principle of n-channel depleted field effect transistor (MOS),本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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描述- 广东凌讯微是一家专注功率半导体器件研发、封装测试、销售与一体的国家高新技术企业,工厂面积1万平方,公司现有人员160余人,每年为业界提供超500KK优质的功率半导体器件产品。广东凌讯微能够为客户提供高质量,高可靠性的功率器件产品及全方位的技术支持,现有肖特基、LowVF肖特基、快恢复、高压MOS、中低压MOS、超结MOS等主力产品线;IGBT单管及碳化硅二极管也在小批量进行中,量产产品会陆续面世。产品广泛应用于各类电源适匹器、LED照明、无刷马达,锂电管理,逆变等领域。
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