SiC MOSFET低边开关导通时的Gate-Source间电压的动作

时间： 2024-07-21 来源：SLKOR官网

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当SiC MOSFET的LS导通时，首先ID会发生变化（见波形示意图T1）。在这个过程中，LS的ID沿增加方向流动，而HS的ID沿减少方向流动，受到等效电路图中表示的事件(I)的影响，产生了公式(1)中所示的电动势。这个电动势会导致电流流向源极侧对CGS进行充电，在LS处将VGS向下推，在HS处将VGS向负极侧拉，产生负浪涌（VGS的波形示意图T1）。

当ID的变化结束时，LS的VDS的电位降低（波形示意图T2）。因此，公式(2)中的电流会像等效电路图中的(II)-1、(II)-2那样流动，并且VGS会分别引发公式(3)、(4)中的电压上升。

VDS刚刚开始变化后，公式(3)中的VGS上升为主，随着时间的推移，公式(4)中的VGS也开始上升。换句话说，MOSFET的CGD/CGS比、驱动电路的RG_EXT、栅极驱动信号图形布线的电感值LTRACE对此具有很大影响。

如等效电路图所示，HS中的(II)-2的电流ICGD2处于VGS提升方向。因此，本来应该处于OFF状态的HS因VGS的提升而开始了导通工作。这种现象称为“误启动”。当HS发生误启动时，就会与LS的导通工作重叠，致使HS和LS的MOSFET同时导通，从而引发直通电流。

ICGD2会持续流动到LS的导通工作结束，并被积蓄在LTRACE中，但会在VSW变化结束的时间点消失，LTRACE产生电动势。这就是事件(III)。受RG_EXT等开关条件影响，ICGD2可能会达到几安培，并且该电动势可能会增加。

受上述事件(I)、(II)、(III)的影响，LS导通后的Gate-Source电压呈现出波形示意图中所示的动作。波形示意图和等效电路图的相同编号表示同一事件。另外，图中VGS的虚线波形表示理想的波形。

外置栅极电阻的影响

下面是SiC MOSFET桥式结构的LS导通时的双脉冲测试结果。(a)波形图的外置栅极电阻RG_EXT为0Ω，(b)为10Ω。图中的(I)、(II)、(III)同前面相应编号的事件。

比较(a)和(b)的波形可以看出，RG_EXT越小，由事件(I)引起的VGS下降就越大。此外，由于开关速度非常快，因此事件(III)在(a)中很突出;但由于RG_EXT为0Ω，因此几乎没有观察到事件(II)的波形。另一方面，在(b)中，事件(II)-2和RG_EXT引起的VGS升程明显。

从该结果可以清楚地看出，要想降低诱发LS导通时HS误启动的事件(II)-2的VGS升程，就需要减小HS关断时的外置栅极电阻RG_EXT。然而，多数情况下，HS和LS的RG_EXT是相同的，因此，当减小RG_EXT时，LS的dVDS/dt将增加，如公式(1)所示，HS的ICGD会增加。从公式(4)可以看出，结果会导致HS浪涌升高。

有一种对策方法是，使导通时和关断时的RG_EXT分离，并且仅减小关断时的RG_EXT。常规方法是使用二极管的方法，如右图所示。使用这种方法，在导通状态下工作的电阻只有RG_ON，而在关断状态下，二极管导通并成为RG_ON和RG_OFF的并联电阻。因此，相对于导通时的电阻值，关断时的电阻值变小。

另外，与最前面说明中使用的波形示意图不同，HS的VGS波形之所以在紧靠事件(I)之前的位置向正极侧振荡，是因为事件(I)的电流开始流动的瞬间LSOURCE引起的电动势在通过CGS后立即被观测到了。

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本文由玉鹤甘茗转载自SLKOR官网，原文标题为:SiC MOSFET低边开关导通时的Gate-Source间电压的动作，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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Currently, Slkor has achieved significant success in the Turkish market, paving the way for greater international success for the company. Mr. Song Shiqiang, CEO of Slkor, stated, “Slkor is actively planning to expand into overseas markets, with Turkey serving as the starting point. We aim to gradually establish a strong brand image in the international market.“

厂牌及品类发布时间 : 2024-04-10