What Is The Difference between MBR20100FCT and MBR20100CT

时间： 2024-05-15 来源：LXMICRO Official Website

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Schottky diode,MBR20100CT,MBR20100FCT,凌讯微电子

What is the difference between Schottky diode MBR20100CT and Schottky diode MBR20100CT? Before discussing their differences, let's take a look at their parameter specifications together and make a simple comparison:

MBR20100FCT, average forward rectified current 20A, reverse withstand voltage 100V, forward voltage drop 0.75V, reverse leakage current 10μA, forward repetitive peak surge current 300A, packaged ITO-220AB; MBR20100CT, average forward rectified current 20A, reverse withstand voltage 100V, forward voltage drop 0.75V, reverse leakage current 10μA, forward repetitive peak surge current 300A, packaged TO-220AB. The picture is as follows

Fig.1

As shown in the above figure, the difference between Schottky diode MBR20100FCT and MBR20100CT is that MBR20100FCT is fully encapsulated, while MBR20100CT is semi-encapsulated. And there is no difference in parameter specifications and foot positions between the two, so why design these two different packaging methods? Or rather, what is the purpose of designing these two packaging methods? Speaking of which, we have to mention a very important issue in the use of electronic products - heat dissipation!

One of the reasons why Schottky designed these two methods is also this. Behind the semi plastic packaging is an iron sheet. As we all know, the thermal conductivity of iron is very good, so the semi plastic design is mainly to solve the problem of heat dissipation. So here's the problem! Wrapped with black glue outside the fully plastic packaging, it's not like it's reversed and won't have the effect of heat dissipation. Of course not. In a well ventilated environment, we need to consider another issue - insulation. The black glue wrapping outside greatly improves the insulation of Schottky diodes, preventing leakage caused by humid air and posing a threat to people or electronic products. We hope the above content will be helpful for everyone in how to choose Schottky diode packaging in the future.

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SHIKUES Showcased GaN FET Products and Silicon Carbide Schottky Diodes at Shenzhen Electronic Components and Materials Procurement Exhibition

On October 11, 2023, the three-day Shenzhen Electronic Components and Materials Procurement Exhibition opened at the Shenzhen International Convention and Exhibition Center. SHIKUES presented efficient solutions in popular areas such as fast charging, energy storage, and photovoltaics at this exhibition.

厂牌及品类发布时间 : 2023-10-20

Low Voltage Drop High Junction Temperature Schottky Diode HBT20L200DC from LXMICRO Adopts TO-263 Packaging

The Lingxun/LX brand HBT20L200DC low-voltage drop high junction temperature Schottky diode adopts imported chips from Taiwan, with an electrical parameter of 20A200V and two chips inside. The chip size reaches 93MIL, with a minimum operating temperature of -55 degrees Celsius and a maximum operating temperature of+175 degrees Celsius. There are 3 pins in total, with input on both sides and output on the middle pin.

产品发布时间 : 2024-05-26