What Is The Difference between MBR20100FCT and MBR20100CT

2024-05-15 LXMICRO Official Website
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What is the difference between Schottky diode MBR20100CT and Schottky diode MBR20100CT? Before discussing their differences, let's take a look at their parameter specifications together and make a simple comparison:

           

MBR20100FCT, average forward rectified current 20A, reverse withstand voltage 100V, forward voltage drop 0.75V, reverse leakage current 10μA, forward repetitive peak surge current 300A, packaged ITO-220AB; MBR20100CT, average forward rectified current 20A, reverse withstand voltage 100V, forward voltage drop 0.75V, reverse leakage current 10μA, forward repetitive peak surge current 300A, packaged TO-220AB. The picture is as follows

Fig.1

As shown in the above figure, the difference between Schottky diode MBR20100FCT and MBR20100CT is that MBR20100FCT is fully encapsulated, while MBR20100CT is semi-encapsulated. And there is no difference in parameter specifications and foot positions between the two, so why design these two different packaging methods? Or rather, what is the purpose of designing these two packaging methods? Speaking of which, we have to mention a very important issue in the use of electronic products - heat dissipation!

           

One of the reasons why Schottky designed these two methods is also this. Behind the semi plastic packaging is an iron sheet. As we all know, the thermal conductivity of iron is very good, so the semi plastic design is mainly to solve the problem of heat dissipation. So here's the problem! Wrapped with black glue outside the fully plastic packaging, it's not like it's reversed and won't have the effect of heat dissipation. Of course not. In a well ventilated environment, we need to consider another issue - insulation. The black glue wrapping outside greatly improves the insulation of Schottky diodes, preventing leakage caused by humid air and posing a threat to people or electronic products. We hope the above content will be helpful for everyone in how to choose Schottky diode packaging in the future.

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产品    发布时间 : 2024-05-22

SiC Schottky Compared to Normal Schottky Diode

The common Schottky diode, known as Silicon Schottky diode, is a metal-to-semiconductor diode such as MBR2045CT, MBR20100CT, and so on. It has the following advantages (or characteristics) :1.One of the advantages of silicon Schottky diode over PN junction devices is the low forward conduction voltage and low conduction loss.2.Another important performance Schottky diode is its low reverse recovery time (TRR) of 0.01 microseconds3.Silicon Schottky diode behave more like an ideal switch than PN junction devices.

技术探讨    发布时间 : 2024-05-21

Is Schottky Diode Well Sealed with Plastic or Iron?

​In addition to using full plastic packaging to ensure circuit safety, Schottky diodes also have another type of packaging, which is iron head packaging to solve heat dissipation problems. The difference between using iron head packaging and full plastic packaging. This packaging can significantly improve the effective heat dissipation efficiency of power supplies, and is very suitable for circuits with severe heat generation or high heat dissipation requirements.

技术探讨    发布时间 : 2024-05-28

The Low Current Schottky Diode SS54 Series Which is Small in Size, High in Efficiency, Low in Loss, Flat in Pin Position

The small current Schottky diode SS54 is a chip series, which is small in size, high in efficiency, low in loss, flat in pin position and widely used.

产品    发布时间 : 2024-05-10

How to Solve the Electromagnetic Interference Problem of LED Driver Power Supply with Schottky Diodes

In terms of soft switching technology, inductance and capacitance components are added to the original hard switching circuit. Switching frequency modulation technology: by modulating the switching frequency fc, the energy concentrated on fc and its harmonics 2fc, 3fc... is dispersed to the surrounding frequency bands. Schottky diodes with small reverse recovery current and short recovery time are ideal devices for high-frequency rectification in switching power supplies.

技术探讨    发布时间 : 2024-05-26

Low Voltage Drop High Junction Temperature Schottky Diode HBT20L200DC from LXMICRO Adopts TO-263 Packaging

The Lingxun/LX brand HBT20L200DC low-voltage drop high junction temperature Schottky diode adopts imported chips from Taiwan, with an electrical parameter of 20A200V and two chips inside. The chip size reaches 93MIL, with a minimum operating temperature of -55 degrees Celsius and a maximum operating temperature of+175 degrees Celsius. There are 3 pins in total, with input on both sides and output on the middle pin.

产品    发布时间 : 2024-05-26

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