SiC Schottky Compared to Normal Schottky Diode
The common Schottky diode, known as the silicon Schottky diode, is a metal-to-semiconductor diode such as MBR2045CT, MBR20100CT, and so on. It has the following advantages (or characteristics) :
1. One of the advantages of silicon Schottky diode over PN junction devices is the low forward conduction voltage and low conduction loss.
2. Another important performance Schottky diode is its low reverse recovery time (TRR) of 0.01 microseconds
3. The Silicon Schottky diode behaves more like an ideal switch than PN junction devices. However, the Silicon Schottky diode also has two disadvantages, one is the low reverse voltage VR, generally only about 100V, and the other is the large reverse leakage current IR.
As mentioned above, the Silicon Schottky diode has low reverse voltage, around 250V. For the ability to withstand 500-600V reverse voltage requirements, people began to use silicon carbide (SiC) manufacturing devices, because it can withstand higher voltage.
What is a SiC Schottky diode?
Silicon carbide (SiC) is a Schottky diode Schottky diode that replaces silicon (Si) with SIC. It can withstand high voltages. Here are two Schottky comparisons:
Table.1
As can be seen from the table above, the other parameters of silicon carbide Schottky are not as good as ordinary Schottky except that it can withstand high voltage, furthermore, silicon carbide Schottky has not been used to replace silicon power devices except for performance requirements due to the high cost of SiC devices (3-5 times that of similar silicon devices).
The development of silicon carbide materials has made it possible for some silicon carbide power devices to be used in practice. However there are still many key technical issues to be resolved.
It is too early to say whether it will be put into commercial use on a large scale. Our business can communicate with customers or recommend MBR20200CT like ordinary Schottky!
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