Application Advantages of MOSFET

时间： 2024-05-25 来源：LXMICRO Official Website

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MOSFET,NMOSFET,PMOSFET,Metal Oxide Semiconductor Field Effect Transistor

Metal Oxide Semiconductor Field Effect Transistor (MOSFET), also known as Metal Oxide Semiconductor Field Effect Transistor, is a type of field effect transistor that can be widely used in analog and digital circuits. MOSFETs can be divided into two types, N-type and P-type, based on the polarity of their channels (working carriers), commonly referred to as NMOSFET and PMOSFET. Other abbreviations also include NMOS, PMOS, etc.

The application advantages of MOSFET include the following:
1.Field effect transistors are voltage control elements, while bipolar transistors are current control elements. In cases where only a small amount of current is allowed, field-effect transistors should be used; When the signal voltage is low and it is allowed to draw more current from the signal source, bipolar transistors should be selected.

2. The source and drain of some field-effect transistors can be interchanged, and the gate voltage can also be positive or negative, with better flexibility than bipolar transistors.

3. Field effect transistors are called monopole devices because they use a majority of charge carriers for conductivity, while bipolar transistors use both a majority and a minority of charge carriers for conductivity. Therefore, it is called a bipolar device.

4. Field effect transistors can operate under very low current and voltage conditions, and their manufacturing process can easily integrate many field-effect transistors on a single silicon wafer. Therefore, field-effect transistors have been widely used in large-scale integrated circuits.

MOSFET was developed by D. of Bell Lab. in 1960 Kahng and Martin Atalla first successfully implemented this component, and its operating principle is completely different from the Bipolar Junction Transistor (BJT) invented by William Shockley et al. in 1947. Due to its low manufacturing cost, small usage area, and high integration, its importance far exceeds that of BJT in the field of Large Scale Integrated Circuits (LSIs) or Very Large Scale Integrated Circuits (VLSI).

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