The Basic Principle of N-channel Enhanced MOSFET

时间： 2024-05-31 来源：LXMICRO Official Website

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N-channel Enhanced MOSFET,Power MOSFET,N-channel MOSFET,MOSFET

Power MOSFETs are mainly used in computer peripherals (soft and hard drives, printers, graphics machines), power supplies (AC/DC converters, DC/DC converters), automotive electronics, audio circuits and instruments, and other fields.

What is MOSFET
"MOSFET" is an abbreviation for "Metal Oxide Semiconductor Field Effect Transistor" in English. It is a device made of three materials: metal, oxide (SiO2 or SiN), and semiconductor. The so-called Power MOSFET refers to a device that can output a large working current (several amperes to tens of amperes) for power output stages.

The working principle of MOSFET

To make the enhanced N-channel MOSFET work, a positive voltage VGS needs to be applied between G and S, and a positive voltage VDS needs to be applied between D and S to generate a forward working current ID. Changing the voltage of VGS can control the working current ID. Understood the working principle of N-type MOSFET, and the working principle of P-type MOSFET is the same as that of N-type. It's just that the polarity of the working voltage is completely opposite due to different material types. MOSFETs have enhanced and depleted types, with the former being the majority. That is to say, the leakage level (D) current Id increases with the increase of gate (G) voltage Vgs. The Id of the latter is inversely proportional to Vgs.

If VGS is not connected for now (i.e. VGS=0), a positive voltage VDS is applied between the D and S electrodes. The PN junction between the drain electrode D and the substrate is in the opposite direction, so there is no conductivity between the drain source. If a voltage VGS is applied between gate G and source S. At this point, the gate and substrate can be regarded as the two plates of the capacitor, while the oxide insulation layer serves as the dielectric of the capacitor. When VGS is added, positive charges are induced at the interface between the insulation layer and the gate, while negative charges are induced at the interface between the insulation layer and the P-type substrate.

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