理想汽车裁员现象
据21世纪经济报道,从一些独立消息人士获悉,五一假期后,理想的内部优化是新一轮的全公司人事优化,整体优化率超过18% 。根据2023年的财务报告,理想的汽车有近31,600人,超过5,600人参与了这一轮的优化。具体来说,销售和服务运营部门优化了400多人,招聘部门将从200多人减少到40-50人,智能驾驶团队将减少到1000人以下。人员优化是销售业绩低于预期的余震,是负责运营的结果。
人员优化是销售业绩低于预期的余震,是负责运营的结果。理想汽车首席执行官李想是一个具有强烈危机感的人。尽管去年年底公司账目上有超过400亿美元的现金,仍领先于昔日的竞争对手,如果销售额低于内部预期,将进行调整。
3月21日,理想汽车公司首席执行官李想发表了一封全文公开信,重申了公司发展问题和解决方案的精髓: “我们从上到下对产量和竞争的关注使我们的愿望超过了我们的价值,大大降低了我们所擅长的用户价值和运营效率。对欲望的追求会把我们变成我们憎恨的人。”理想汽车发布了一份全体员工的声明,宣布推出 Matrix Organization 2.0升级版,同时重组多个部门的组织结构。最新报道称,优化部门较多的是招聘、销售和服务业务部门和智能驾驶部门。具体来说,销售和服务运营部门优化了400多人,招聘部门将从200多人减少到40-50人,智能驾驶团队将减少到1000人以下。据知情人士透露,4月下旬,管理层批准了最终的裁员名单。5月第一周正式启动的这轮裁员优化工作,将在5月底基本结束,对优化后的员工给予 N + 1的补偿。理想汽车公司希望在6月15日之前完成大部分的员工配置优化计划,届时员工的股票将会发行,从而节省一些兑现成本。今年4月,互联网出来的理想汽车员工透露了公司的状况,理想汽车据说是网络裁员和预算削减都是不真实的。
4月19日,理想 L6悄然上市,正式起价249,800元,已经比原来的内部起价便宜了1万元。加上5月1日期限利息,起价再便宜1万元。5月5日,IDEALISER 报告说,L6在上半个月的市场订单达到了41,000份。
半个月的订单量超过40,000台,L6作为一款新车,在外界看来,订单的结果非常引人注目。但是41,000台的订单是“龙晶大定”,一个为期7天内可退款的单。对于理想的汽车投资者来说,L6上市半个月的最终锁单数量能够达到20,000辆以上,符合预期。
知情人士表示,41,000台订单的最终锁定订单数不足15,000台,实际转化率不足37% 。相比之下,小米 su7已上市5天,龙晶大定量为10万辆。截至4月3日,锁定单已超过4万,转化率超过40% 。
L6的增长潜力尚未实现,理想车型的竞争环境极其有限。在小米等最强大的竞争对手面前,不容有失。为了更有效地竞争,人才调整是理想更激进,更现实的调整。
凌讯微电子是一家专注功率半导体器件研发、封装测试、销售于一体的国家高新技术企业,致力于成为卓越的功率半导体器件制造商,助力功率半导体核心器件国产化,能够为客户提供高质量,高可靠性的功率器件产品及全方位的技术支持,现有肖特基、LowVF肖特基、快恢复、高压MOS、中低压MOS、超结MOS、IGBT单管及SiC(碳化硅)二极管等主力产品线,产品广泛应用于各类电源适匹器、LED照明、无刷马达,锂电管理,逆变等领域。
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肖特基桥是一种采用肖特基二极管(Schottky Diode)构建的整流桥,相比传统的PN结二极管整流桥,它具有低正向压降、快速开关速度和低功耗等优点,广泛应用于开关电源、适配器、LED驱动、电动汽车充电桩等场景。为了在具体应用中选择最合适的肖特基桥,需要全面考虑其电气特性、散热管理、封装形式及可靠性。本文辰达行来给大家解析肖特基桥选用原则。
美浦森半导体携新款超高压VDMOS、超高压多层外延超结MOS等产品亮相2024慕尼黑上海电子展
2024慕尼黑上海电子展(electronica China)将于7月8日-10日在上海新国际博览中心举办。美浦森半导体在本次展会中推出了超高压VDMOS、超高压多层外延超结MOS、中低压SGT MOS产品系列。
龙夏电子(Long-Tek)中低压MOSFET和TMBS(沟槽肖特基二极管)选型指南
目录- 公司简介 技术路线和应用领域介绍 MOSFET/TMBS 产品技术介绍 MOSFET/TMBS 产品列表 品质管理和测试设备介绍
型号- LD40N45SMS9,LR012N04T10,LR037N10S10,D10N45IG,D14N45I,LD10N4512,M17N80S,D13E45SEG,LR055N95S3,D161N45P,D16E45SEG,D10N45IU,LD40N45I2,D26E45SEG,D100N45P,LR030N10S3,LR046N08SA2,LR025N04T3,M10N100SC,LR049N08SA4,M26N100S,LR049N08SA3,LR016N08S10,LR053N95S3,M28N90S,D10N45I,LR022N08S3,D74N100T,M56N40T,LR023N04T2,M36N100,LR027N10S2,M26N95SA,LR038N10S2,LD50N45SOS9,LD20N45SHS6,LR012N04S10,LD40N45SNS9,LR040N10S3,LD35N45SMS6,LR032N08S10,D45N100T,D13N45IA,LR037N10S0,LR022N04T8,D324N45P,LD50N45SLD9,LD40N45SKD2,LR020N08S0,D13N45IU,LR022N10S10,M21N95SA,LR078N10S4,LD20N45SHS2,LD20N45SHS3,LR020N08S2,LR020N08S1,LR052N09S2,M17N100SF,LR055N09S3,D16E45SE,D23N45IU,D19E45SEG,LR038N08S1,D19E45SE,LR038N08S2,LR038N08SA10,LD25N45SHD9,LR032N08S1,LR035N08S3,LR032N08S0,LR018N10S10,LR067N08S8,LR032N08S2,LD30N100T3,LR067N08S4,M17N100S,LR074N09S4,LR020N08S10,D13E45SD,D23N45IM,LR051N95S2,M21N80SA,M36N95S,D23N45IL,LR072N10SL4,LD45N45SOS6,D36N68TG,LD30N45SLS9,M31N80SA,D50N100S,LR052N10S2,LD50N45SKD9,LR022N10S0,LR046N08SA10,LR063N08S2,TSR40L100CTF,LR072N09S8,LR072N09S3,D23N45I,D14N45IU,LR020N04T10,LR015N04T0,LR020N04T0,M26N40S,M31N95SA,M28N95S,M36N68TN,LD20N100T3,LD30N45SKS6,D37N100T,LD30N45SKS2,LD30N45SKS3,LD30N45SKS9,LR055N10S3,LR041N08SA3,D11N45S,LR049W08S1,LD25N45SJS6,LR032N10S10,LR065N08S3,M36N80S,LD25N45SJS2,LR052N95S8,M10N80S,M26N80SA,LR069N09S2,LR045N10S1,D250N45P,LR045N10S3,D27N100T,LR042N10S2,D11N45SU,D13N45I,LM120N08S1,LD10N100T2,LD10N100T3
凌讯微CS13N50系列高压MOS型号推荐
凌讯微电子CS13N50系列高压MOS,封装:TO-220AB、TO-220F、TO-263 、TO-252、TO-251,I D:13AV, DSS :500V,RDSON-typ VGS=10V :0.37Ω。
凌讯微CS20N50A系列高压MOS型号推荐
凌讯微电子CS20N50A系列高压MOS,封装:TO-220AB、TO-247、TO-247S;I D:20A,V DSS :500V,RDSON-typ VGS=10V :0.24Ω。
凌讯微LC60R075系列COOL MOS型号推荐
凌讯微电子LC60R075系列COOL MOS,采用封装:TO-247、TO-220F,I D:47AV,DSS :600VRDSON-typ,VGS=10V :68mΩ。
美禄科技授权世强硬创代理氮化镓功率器件、平面/超结MOS等产品
产品广泛应用于PD快充、户外电源、UPS、储能、逆变器、充电桩、数字服务器、马达驱动、PD快充、电源适配器、LED照明、通讯电源、白色家电、工业控制、光伏逆变、移动储能等领域。
HI-SEMICON(深鸿盛)场效应管(MOSFET)选型表
目录- 中低压功率MOSFETs 高压功率MOSFETs 超结MOSFETs
型号- SFU6007T,SFP20N65,SCF60R190C,SFD3006T,SFD6003T,SGP104R5T,SFF10N65R,SFD7N70,SFF4N60E,SFQ0320T4,SFM4009T,SFE6001T2,SFP20N60,SFK2N50,SFF60N06,SFM041R8T,SFD60N06,SFD2N50,SFP4N65,SFP33N10,SFP4N65E,SCP60R190C,SFP20N70,SFS3401,SFD4N60E,SFS3400,SFD6005T,SFD7N65E-Y,SFD7N50,SFM6005ST,SFF18N50,SCA60R280C,SFM4N65,SFD1N65,SCP70R360C6,SFD3015T,SGA855R0T,SFP50N06,SCA65R540T,SCF65R640C,SFQ0322T4,SFU4N65E,SFF12N65,SFD6006T,SFD6N70,SGM10HR14T,SFQ0420T4,SGM062R3T,SFS4525T,SFD3N50-P,SFN3009T,SCD60R360C,SFF6N70,SFU3006T,SCF65R1K15C,SFP9N20,SFF50N06,SFD6007T,SFF3N50-P,SFP10N60,SCF65R380C,SFP7N65E-Y,SCP65R380C,SCP60R280C,SFS4008T2,SFS2300,SFF7N65-Y,SCF60R280C,SFF13N50,SFF7N50,SCF65R540T,SFD50N06,SFP10N70,SCD65R1K2C,SFM4010T,SFD3N50TS,SFF6007T,SCF80R500C,SCD80R500C,SFF2N50,SFD3012T,SFA3018T,SFF7N65,SCF65R310C,SFF7N65E-Y,SCD70R360C6,SFF6006T,SCK65R1K15C,SFD4N65E,SFF15N10,SFU4N65,SFF7N70,SFD4003T,SFU9N65,SFF6005T,SFD7N65-Y,SCP60R160C,SCA60R190C,SCF80R950C,SFK3N50,SCF55R2K7C,SFF12N65-Y,SFE3007T,SFP3006T,SFD5N50,SGM6005DT,SFF9N20,SGF15N10,SFP60N06,SFS2N10,SCF70R600C6,SFD4001PT5,SFP10N65-Y,SFF3N50,SFM4N65E,SCD65R125C,SCF65R125C,SFD4N70,SFP7N65-Y,SFF5N50TS,SFP6005T,SCP65R125C,SGM031R1T,SCF70R420C,SCD70R420C,SFP12N65-Y,SCP65R540T,SCF60R160C,SFD4N65,SFS2N7002,SFF3N50TS,SFF33N10,SCF70R360C6,SFS2302B,SFS2301B,SFD15N10,SFF20N60,SFD6003PT,SGA104R5T,SFF20N65,SFS4606T,SFU4003T,SGD15N10,SFF9N50,SFD10N65-J,SFF4N65E,SFD4004PT,SFD9N65,SFF20N70,SFU10N65R,SCD55R2K7C,SFU6003T,SFF10N70,SCF60R360C,SFD2006T,SFF9N65,SFP13N50,SCD70R600C6,SFU7N70,SCD65R380C,SFD5N50TS,SFAP4580,SFF10N60,SCD65R540T,SCP60R360C,SFF4N65,SFM0320T4,SCF65R1K2C,SCP80R500C,SGP855R0T,SFU6005T,SFD10N65R,SFD3N50,SFP12N65,SFU6N70,SFU4N60E,SFF4N70,SFF10N65-Y,SFF9N90,SGU15N10,SFM3011T,SFF16N65,SFP110N55,SFU6006T,SFP18N50,SFU15N10,SFF5N50,SFF10N65-J,SFN6004T5,SFP59N10,SFD9N20,SCF65R240C,SCD65R640C,SFM3012T,SFS5N10S,SFN0250T2,SCD65R1K15C
高耐压超结MOS场效应管LC65R600F,漏源导通电阻520mΩ,栅源电压±30V,TO-220F封装
凌讯微电子品牌LC65R600在TO-220F封装里采用的是1颗芯片,电性参数为7A650V的一款高耐压超结MOS管(COOL MOS)。
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