The Cause of Serious Heat in the FET

时间： 2024-05-31 来源：Lujing Official Website

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FET,MOS tube,unipolar transistors,MOS transistor

In the previous article, we mentioned the characteristics of FETs, mainly including their electronic parameters, which are unipolar transistors. In this paper, we introduce the causes of serious heat generation in FETs.

There are four reasons for the severe heat of the FET:

1. The problem of circuit design is to make the MOS transistor work in a linear working state instead of in a switching state. This is also a cause of the MOS tube heating.

2, the frequency is too high, the main reason is sometimes excessive pursuit of volume, resulting in increased frequency, MOS tube loss increases, so the heat has increased;

3, did not do a good enough thermal design, the current is too high, MOS tube nominal current value, generally requires good heat dissipation to achieve. Therefore, if the ID is less than the maximum current, serious heat generation may occur, and sufficient auxiliary heat sinks may be required.

4, MOS tube selection is wrong, wrong judgment of power, MOS tube internal resistance is not fully considered, resulting in increased switching impedance.

As for the selection of MOS transistors, there are two types of enhancement type (Enhancement MOS or EMOS) and depletion type (MOS or DMOS). Each type has two types of conductivity, N-channel and P-channel. The field effect transistor has three electrodes: D (Drain) is called the drain, equivalent to the collector of the bipolar transistor; G (Gate) is called the gate, equivalent to the base of the bipolar triode; S (Source) is called The source is equivalent to the emitter of a bipolar transistor.

The selection of FETs is more important. If the selection is wrong, it is not only a serious problem of heat generation, but it is more likely that the entire circuit no longer meets the original requirements. Lujing Semiconductor offers a variety of field effect tube-type models. If you need to, please contact customer service online to provide more professional answers.

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本文由三年不鸣转载自Lujing Official Website，原文标题为:The cause of serious heat in the FET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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MOS管有啥难的？

三极管中参与导电的有两种极性的载流子，所以也称为双极型三极管。本文介绍另一种三极管，这种三极管只有一种载流子参与导电，所以也称为单极型三极管，因为这种管子是利用电场效应控制电流的，所以也叫场效应三极管(FET)，简称场效应管。MOS在电路中应用很常见，主要作为开关管，在电机驱动电路中常见。

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MOS’s Definition and Classification

The bipolar transistor amplifies the small changes in the input current and outputs a large current change at the output. The gain of a bipolar transistor is defined as the ratio of the input to the input current (beta). Another type of transistor, called a field effect transistor (FET), which translates the change in input voltage into a change in output current. The gain of the FET is equal to its trans-conductance, defined as the ratio of the change in output current to the change in input voltage.

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