What is IGBT? What is Its Working Principle? What are Its Advantages?

Simply put, there is a beautiful MOSFET and a handsome transistor in the semiconductor family. They got married and had a son named IGBT. I=Insulate G=Gate B=Bipolar T=Transistor—---IGBT, Insulated gate bipolar transistor.

From high-speed rail, electric vehicles, to air conditioners, and induction cookers, all of these products have its presence, and they all have a common characteristic - high voltage, which is its circuit symbol.

Fig.1

G is the gate of the MOS transistor that follows the mother, C E follows the father, collector and emitter, and IGBT combines the advantages of father and mother.

Fig.2

Combining the advantages of low driving current of MOSFETs and low on resistance of transistors, MOSFETs are electric field driving devices. When they conduct, their G S poles act as circuit breakers.

Fig.3

The current is extremely small, so the driving current of MOSFETs is low. When the transistor saturates and conducts, its CE resistance is very small, so the conduction resistance of the transistor is low.
The equivalent circuit symbol of IGBT is a combination of both.

Fig.4

When we give G a very low power frequency, the IGBT will cut off, which is equivalent to a switch being disconnected. When we give G a very high power frequency, the MOS lead is turned on, and then the CE pole of the transistor forms a current, and the IGBT conducts. This is the principle of IGBT.

Its main function is to convert high-voltage direct current into alternating current, as well as frequency conversion.

By combining a transistor and a MOSFET in this way, it is possible to withstand high voltages while also being able to withstand high currents.

Is MOS transistor chosen in the circuit? Triode? Or IGBT? As a switch function. The main focus is on its current, voltage resistance, and switching frequency. We need to choose different components according to different application scenarios.

Lingxun Micro's IGBT single tube adopts a dual chip process

Fig.5 IGBT+FRD

Has high voltage resistance
IGBT can withstand high voltage and withstand voltage up to 6500 volts.

Fast switching speed
The switching speed of IGBT is fast, it can change tens of thousands of times in one second.

Low conduction voltage drop
The conduction voltage of IGBT decreases, this means that in the conductive state, it can transmit current with lower energy loss.

High integration
The integration degree of IGBT is high, making it possible to achieve higher power in smaller spaces.

Good thermal conductivity,

IGBT has good thermal conductivity and is capable of working in high-temperature environments.

Energy conservation
IGBT generates less heat during operation, being able to convert electricity more efficiently, and reduce energy waste.

High input impedance
IGBT is sensitive to control signals,and can easily control current and power output.