Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC
EPC introduces the 50V, 8.5mOhm EPC2057 GaN FET in tiny 1.5mm x 1.2mm footprint, offering higher power density for USB-C PD applications.
EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057 GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.
Key Features and Benefits:
High Efficiency: The new 50 V GaN FET boasts an ultra-low on-resistance of just 8.5 mΩ, significantly reducing power losses and enhancing overall efficiency.
High Efficiency: Its tiny footprint makes it ideal for space-constrained applications, allowing for smaller, more efficient power adapters and chargers.
Fast Switching: The GaN technology enables faster switching speeds, improving power density and reducing the size of passive components, leading to more compact and lightweight designs.
“As USB-C PD continues to gain traction, efficient, compact, high-performance power solutions are vital. Our new GaN FET meets these needs with a reliable, efficient solution that enhances performance,” said Alex Lidow, EPC CEO and co-founder.
Industry Impact
With the increasing adoption of USB-C PD, there is a growing demand for power components that can deliver higher efficiency and performance while minimizing size and heat generation. EPC’s new GaN FET is designed to meet this demand, offering a superior alternative to traditional silicon-based FETs.
The EPC90155 development board is a half bridge featuring the EPC2057 GaN FET. It is designed for 40V maximum operating voltage and 10A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
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本文由玄子转载自EPC Official Website，原文标题为:Design Higher Power Density USB-C PD Applications with New 50 V GaN FET in Tiny 1.8 mm2 Footprint from EPC，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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