瑶芯碳化硅功率MOSFET AKCK2M016WAMH，为充电桩模块提供高电压、低阻值的单管方案
截止至2023年底，我国充电基础设施累计数量已超过800万台，同期新能源汽车和充电桩的比例约为2.3：1。这距离工信部之前提出的“2025年实现车桩比2：1，2030年实现车桩比1：1”，还存在一定差距，我国的充电桩市场还有很大的发展潜力。
高效、可靠的充电桩组成模块是需要考虑的核心问题之一。这对功率半导体组件，特别是高效能的功率MOSFET，提出了更高的要求。功率MOSFET在电能转换效率、系统可靠性和成本控制方面扮演着核心角色。瑶芯的碳化硅功率MOSFET AKCK2M016WAMH正是面向未来的一种先进解决方案，其高电压和低阻值特性使其成为大功率充电桩模块设计中的理想选择。
图1 大型直流充电站
随着电动车市场的扩张，高功率充电桩的设计对MOSFET提出了更高的能效和稳定性要求。MOSFET需要在高电压和高电流环境下提供高效的电能转换，同时最小化能源损耗和热量产生，确保系统的运行效率。此外，良好的热稳定性是硬性指标，因为充电桩必须在长时间工作的高温条件下保持性能不衰退，避免因热量积聚而导致的性能不稳定甚至损坏。最后，电气性能的可靠性也同样重要，MOSFET在充电桩中必须展现出低导通电阻和快速开关能力，以保证在频繁的充放电过程中充电桩的高效和响应速度，确保用户体验和设备的长期稳定运行。
瑶芯的AKCK2M016WAMH Silicon Carbide Power MOSFET是专为满足60kW以上的大功率电源和逆变应用设计的，尤其适用于充电桩模块。这款MOSFET漏源之间最大耐压值可达1200V、16mΩ的导通电阻（RDSON, TYP@VGS=18V），提供了一种高电压、低阻值的单管解决方案。它的设计不仅可以降低整体的设计成本，还提供了灵活性，以适应不同的系统设计要求。
图2 不同栅压下的导通电阻与温度关系
该MOSEFT标准工况下持续工作电流为125A，冲击电流为200A，具有优秀的电流承载能力。其最大功率耗散为600W，在各种工况下均能展现出卓越的能效。这些特性确保了在高功率应用中的高效率和低能耗。它还有着出色的热特性，如0.25°C/W的结到壳热阻，这保证了它在高温环境下的稳定运行和长期可靠性。
此外，该MOSEFT的温度工作范围为-55℃至+175℃，它可以在严苛气候条件下稳定工作，对经常被安装在室外或恶劣环境中的充电桩来说非常关键。这些优秀的性能使得AKCK2M016WAMH成为充电桩模块应用中的理想选择。
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本文由犀牛先生转载自瑶芯微电子公众号，原文标题为:充电桩模块选用瑶芯碳化硅功率MOSFET AKCK2M016WAMH，提供高电压、低阻值的单管方案，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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型号- 2SK2225-80-E,TFLEX HD300,CMS-R010-1.0,U9507C,TPCM 780,10-FZ074PA0XXSM-LXXXF08,SPFJ160,PS9402,BVE-A-R002-1.0,MLX91208,10-FZ07ANAXXSM-LE2XL08,PS9031,LSIC2SD120E30CC,SI8235BD-D-IS,SI8233BD-D-IS,10-FZ071SA050SM02-L524L18,KSU60D60N,92ML,10-FZ07ANA75SM-LE28L08,10-FZ07ANA150SM-LE20L08,0505030.MX52LEP,RC12-6-01LS,10-FY074PA100SM-L583F08,10-FZ071SA100SM02-L526L18,SMBJ18CA,ADP32F12A,PS9531L3,10-FZ071SA075SM02-L525L18,RBN75H65T1GPQ-A0,C4D30120D,KSF60F60B,SID1152K,SI8621BD-B-IS,10-FZ07ANA100SM-LE29L08,10-FZ074PA050SM-L624F08,10-FZ074PA075SM-L625F08,SGM2019
技术分享 | 解析SiC MOSFET串扰特性
随着SiC MOSFET开关频率的不断增加，在半桥结构（如逆变电路、全桥电路等）桥臂串扰现象越发严重，易造成桥臂直通短路或影响可靠性，限制了SiC MOSFET开关频率及系统功率密度进一步提高。本文瑶芯微将为您解析SiC MOSFET串扰特性。
技术探讨 发布时间 : 2024-08-10
鲁晶携多款功率器件产品出席第十四届亚洲电源技术发展论坛，为新能源、光伏、充电桩等领域应用提供服务
鲁晶半导体携旗下Si SBD/FRD/SCR、Si MOS/IGBT、SiC Diodes、SiC MOSFET等功率器件产品出席第十四届亚洲电源技术发展论坛，产品广泛应用于各类智能家电、电动工具、新能源、充电桩、光伏、电源、工控等领域。
厂牌及品类 发布时间 : 2024-01-09
澜芯半导体车规级SiC MOSFET/ IGBT等功率器件授权世强硬创代理
1200V 40mΩ SiC MOSFET和基于第二代工艺平台开发的1200V 12mΩ SiC MOSFET单芯片流片取得巨大成功，平均良率达到90%以上。
签约新闻 发布时间 : 2023-10-18
亚成微电子（Reactor Microelectronics）功率MOSFET选型指南
描述- 亚成微专注于高速率功率集成技术设计领域。主要产品包括功率MOSFET、AC/DC电源管理芯片、LED驱动芯片以及包络追踪射频功率放大器（ET-PA）等。产品可被广泛应用于5G通讯、消费电子以及LED照明等多领域中。亚成微拥有由多名博士带领的国际领先技术的设计团队，公司自主研发的产品已获得国家专利62项、国际专利3项，另有67余项专利正在受理中，其中包含9项国际专利。
型号- RMA65R1K0SN,RMA65R380SN,RMG65R600BN,RC10R600H,RMC65R280SN,RMA65R950SN,RMA65R600BN,RMC65R1K0SN,RMG65R380SN,RMG65R650BN,RMXXXRXXX,RMC65R950SN,RMA65R650BN,RMA65R280SN,RMG65R1K0SN,RMC65R650BN,RMG65R280SN,RMC65R380SN
HI-SEMICON（深鸿盛）场效应管（MOSFET）选型表
目录- 中低压功率MOSFETs 高压功率MOSFETs 超结MOSFETs
型号- SFU6007T,SFP20N65,SCF60R190C,SFD3006T,SFD6003T,SGP104R5T,SFF10N65R,SFD7N70,SFF4N60E,SFQ0320T4,SFM4009T,SFE6001T2,SFP20N60,SFK2N50,SFF60N06,SFM041R8T,SFD60N06,SFD2N50,SFP4N65,SFP33N10,SFP4N65E,SCP60R190C,SFP20N70,SFS3401,SFD4N60E,SFS3400,SFD6005T,SFD7N65E-Y,SFD7N50,SFM6005ST,SFF18N50,SCA60R280C,SFM4N65,SFD1N65,SCP70R360C6,SFD3015T,SGA855R0T,SFP50N06,SCA65R540T,SCF65R640C,SFQ0322T4,SFU4N65E,SFF12N65,SFD6006T,SFD6N70,SGM10HR14T,SFQ0420T4,SGM062R3T,SFS4525T,SFD3N50-P,SFN3009T,SCD60R360C,SFF6N70,SFU3006T,SCF65R1K15C,SFP9N20,SFF50N06,SFD6007T,SFF3N50-P,SFP10N60,SCF65R380C,SFP7N65E-Y,SCP65R380C,SCP60R280C,SFS4008T2,SFS2300,SFF7N65-Y,SCF60R280C,SFF13N50,SFF7N50,SCF65R540T,SFD50N06,SFP10N70,SCD65R1K2C,SFM4010T,SFD3N50TS,SFF6007T,SCF80R500C,SCD80R500C,SFF2N50,SFD3012T,SFA3018T,SFF7N65,SCF65R310C,SFF7N65E-Y,SCD70R360C6,SFF6006T,SCK65R1K15C,SFD4N65E,SFF15N10,SFU4N65,SFF7N70,SFD4003T,SFU9N65,SFF6005T,SFD7N65-Y,SCP60R160C,SCA60R190C,SCF80R950C,SFK3N50,SCF55R2K7C,SFF12N65-Y,SFE3007T,SFP3006T,SFD5N50,SGM6005DT,SFF9N20,SGF15N10,SFP60N06,SFS2N10,SCF70R600C6,SFD4001PT5,SFP10N65-Y,SFF3N50,SFM4N65E,SCD65R125C,SCF65R125C,SFD4N70,SFP7N65-Y,SFF5N50TS,SFP6005T,SCP65R125C,SGM031R1T,SCF70R420C,SCD70R420C,SFP12N65-Y,SCP65R540T,SCF60R160C,SFD4N65,SFS2N7002,SFF3N50TS,SFF33N10,SCF70R360C6,SFS2302B,SFS2301B,SFD15N10,SFF20N60,SFD6003PT,SGA104R5T,SFF20N65,SFS4606T,SFU4003T,SGD15N10,SFF9N50,SFD10N65-J,SFF4N65E,SFD4004PT,SFD9N65,SFF20N70,SFU10N65R,SCD55R2K7C,SFU6003T,SFF10N70,SCF60R360C,SFD2006T,SFF9N65,SFP13N50,SCD70R600C6,SFU7N70,SCD65R380C,SFD5N50TS,SFAP4580,SFF10N60,SCD65R540T,SCP60R360C,SFF4N65,SFM0320T4,SCF65R1K2C,SCP80R500C,SGP855R0T,SFU6005T,SFD10N65R,SFD3N50,SFP12N65,SFU6N70,SFU4N60E,SFF4N70,SFF10N65-Y,SFF9N90,SGU15N10,SFM3011T,SFF16N65,SFP110N55,SFU6006T,SFP18N50,SFU15N10,SFF5N50,SFF10N65-J,SFN6004T5,SFP59N10,SFD9N20,SCF65R240C,SCD65R640C,SFM3012T,SFS5N10S,SFN0250T2,SCD65R1K15C
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
实验室地址： 西安 提交需求>
可来图定制热管最薄打扁厚度0.35±0.05mm；笔电D8热管打扁厚度1.0mm，可解40W热量；高功率D10热管可解60W热量。
最小起订量： 10000 提交需求>
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授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
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授权代理品牌：加工与定制
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