【产品】漏源电压为650V的N沟道MOSFET器件12N65,其连续漏极电流为12A,可提供四种封装选项
固得沃克公司推出的12N65系列是一款连续漏极电流12A、漏源电压650V的N通道MOSFET。其栅源电压为±30V,脉冲漏极电流为48A,单脉冲雪崩能量为900mJ,工作结温和储存温度范围均为-55℃~150℃,反向二极管的dV/dt为5.5V/ns。该系列产品可提供四种封装分别为:ITO-220AB、TO-220AB、TO-262和TO-263,具体如下图。
图1 12N65封装
图2 12N65等效电路图
产品特点:
●漏极电流12A,漏源电压650V
●漏源导通电阻RDS(ON)为0.65Ω(@VGS=10V/6A)
●低栅极电荷
●低输入电容
●快速开关
●100%雪崩测试
●改进的dv/dt能力
热特性参数:
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本文由两斤樱桃翻译自固得沃克,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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目录- 公司简介 半导体分立器件产品概览图和应用介绍 三极管 MOS管 光电耦合器OC 线性稳压管LDO 贴片普通整流二极管 贴片快恢复二极管 贴片高频二极管 贴片超快恢复二极管 贴片肖特基势垒二极管 直插普通整流二极管 直插快速恢复二极管 直插高频二极管 直插超快恢复二极管 直插肖特基势垒二极管 高压二极管 LOW VF二极管 MINI桥堆 扁桥 方桥 圆桥 TVS瞬变电压抑制二极管 Zener稳压二极管 光伏组件通用二极管 小信号二极管 ESD静电保护管 包装规范 品质政策和品质系统 产品封装图
型号- 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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。
最小起订量: 1 提交需求>
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