电动游艇——零排放水上运动,电机驱动由SiC-MOSFET DIF120SIC022-AQ提供动力
在沿海地区运营的大量游艇要求减少燃烧排放和噪音污染。解决方案是采用一个全电动推进系统,它是零排放,噪音和振动更小,因此提供更清洁,更高效的航行。这些电动推进系统的加速度、速度和效率提供了无与伦比的航行体验,并为船舶设计和技术树立了新的标准。
德欧泰克的SiC-MOSFET DIF120SIC022-AQ是高效船形驱动逆变器的完美器件。它在100℃的外壳温度下提供1200V的漏源电压和85A的连续漏电流。它采用4脚TO-247封装,配备开尔文源(Kelvin)触点。这使得可以实现高速开关,减少功率损耗和有高可靠运行。它非常适合用于电动游艇的高压电池,现在正被海军部门采用。
- |
- +1 赞 0
- 收藏
- 评论 0
本文由玉鹤甘茗转载自DIOTEC(德欧泰克半导体公众号),原文标题为:电动游艇——零排放水上运动,电机驱动由SiC-MOSFET DIF120SIC022-AQ提供动力,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
SiC MOSFETs and SiC Schottky Diodes in TO-247-3L&4L for Sustainable Public Transportation
Power components by Diotec Semiconductor play an important role when it comes to electric mobility in general and “green“ public transportation in particular. SiC MOSFETs and SiC Schottky diodes by Diotec are able to help reduce energy losses and improve the performance of the converters.
应用方案 发布时间 : 2024-04-01
DIOTEC提供低能耗高性能SiC MOSFETs和SiC Schottky二极管,助力城市电动和“绿色”公共交通发展
DIOTEC德欧泰克的SiC MOSFETs和 SiC Schottky二极管有助于减少能量损耗并提高转换器的性能。驱动逆变器是使电机转动从而使搭载乘客的长途汽车前最后的部分。德欧泰克提供了许多符合汽车标准的零部件,用于电池管理系统、驱动电子设备、油泵和冷却水泵、乘客空调等辅助功能。
应用方案 发布时间 : 2024-05-11
Electric Yachts – Emissions-Free Aquatics, Motor Drive Powered By the SiC-MOSFET DIF120SIC022-AQ
The SiC-MOSFET DIF120SIC022-AQ by Diotec Semiconductor is the perfect device for highly efficient boat drive inverters. It offers 1200V of Drain-Source voltage and 85A of continuous Drain current at 100℃ case temperature.
应用方案 发布时间 : 2024-06-25
Now available in TO-247 with 3 or 4 leads, the SiC MOSFET
Diotec Semiconductor offers new SiC MOSFETs in TO-247 with 3 or 4 Leads, highly suitable for EV charging systems for electric vehicles, solar inverters, and telecom power supplies.
产品 发布时间 : 2024-03-06
p247 3D STEP
型号- DIW085N06,SICW20C120,PWY8012,DIF120SIC053-AQ,DIW085N06-Q,DIW012N65,PW4516,SICW40C120,DIW120SIC059-AQ,PW4512,DIW030N65K
家用和商用电动汽车充电器采用德欧泰克的DIF120SIC053-AQ实现缩小尺寸
德欧泰克推出的SiC-MOSFET DIF120SIC053-AQ在高达1200 V的高电压水平下提供非常低的开关损耗。导通电阻小于53 mΩ,总栅极电荷小于121 nC。它采用TO-247封装,带第四引脚,即开尔文(Kelvin)源。
应用方案 发布时间 : 2024-04-13
SiC-MOSFET和Si-MOSFET、IGBT的区别
功率转换电路中的晶体管的作用非常重要,为进一步实现低损耗与应用尺寸小型化,一直在进行各种改良。SiC功率元器件半导体的优势如:低损耗、高速开关、高温工作等,显而易见这些优势是非常有用的。本文介绍SiC-MOSFET和Si-MOSFET、IGBT的的区别。
技术探讨 发布时间 : 2023-10-20
金莱勒电气推出DNH40系列隔离开关,最大额定电流4000A,适用于大型船舶电力系统
金莱勒电气推出DNH40系列隔离开关无缝对接全球标准,替换更自由。单品最大额定电流4000A,可轻松应对高电流负载,适用于大型船舶电力系统。
产品 发布时间 : 2024-10-31
Diotec(德欧泰克)稳压二极管/瞬态抑制二极管/限流二极管/双向触发二极管选型指南
型号- ZMM10,ZMM11,P6SMBJ28A,CL30MD,3.0SMCJ9.0,TGL34-11C,P4SMAJ170C,P6SMB220CA,TGL34-11A,P4SMAJ33CA,Z3SMC6.8,ZMD4.3,SMF170A,ZMY3.9G,P6SMBJ5.0C,SZ3C200,MM1Z4731A,SMF5.0CA,P6SMBJ5.0A,TGL41-200,P6SMBJ5.0,P6SMB550,L.0SMBJ9.0,P4SMAJ8.5CA,TGL34-10,TGL34-11,TGL34-10C,TGL200C2K,CL40M45,P4SMAJ170A,SDA4AK,MM1Z4730A,L.0SMBJ5.0C,TGL34-10A,L.0SMBJ5.0A,TGL61-200,P6SMBJ8.5CA,CL15MD,SMF9.0CA,CL05M6F,TGL61-10C,TGL61-10A,TGL61-520C,1.5SMC550,ZMD10,ZMD11,ZMM2.4,3.0SMCJ8.5,TGL34-6.8C,TGL34-6.8A,CL40M35,5.0SMCJ12,TGL41-6.8C,P4SMAJ8.5,TGL41-6.8A,P6SMBJ8.5A,ZMD5.6,P6SMBJ8.5C,SZ3C100,TGL200C08,5.0SMCJ12A,L.0SMBJ5.0CA,SMF180A,TGL200C06,5.0SMCJ12C,TGL200C10,SMF5.0A,ZMM3.9,MM1Z4740A,P6SMBJ170,P6SMB220C,P6SMB220A,Z1SMA100,SMZ200,SMF220A,3.0SMCJ9.0C,TGL41-520C,3.0SMCJ9.0A,L.0SMBJ120,P4SMAJ9.0CA,P4SMAJ9.0,5.0SMCJ12CA,ZMD6.2,TGL41-520,TGL61-10CA,CL15M45,L.0SMBJ9.0CA,TGL61-11C,CL20MD,TGL61-11A,L.0SMBJ9.0A,L.0SMBJ9.0C,P6SMBJ170C,SMF8.5A,SDA2AK,1.5SMCJ8.5,P4SMA220CA,TGL41-11,TGL34-6.8,TGL41-10,SMZ100,3.0SMCJ8.5CA,Z2SMB200,SZ3C110,CL15M35,ZMM75,ZMY6.2G,TPSMA6L85A,P4SMAJ5.0CA,TGL61-6.8,L.0SMBJ120C,ZMM4.3,ZMD1,BR100-03LLD,L.0SMBJ120A,1.5SMCJ170C,P6SMBJ170A,1.5SMCJ170A,5.0SMCJ170CA,SMZ1,SMZ110,SMF180CA,TPSMA6L5.0A,L.0SMBJ8.5,L.0SMBJ8.5A,ZMY5.6G,MM1Z4728A,TGL61-200A,L.0SMBJ8.5C,1.5SMC220,SMF9.0A,P6SMBJ170CA,Z1SMA6.2,P4SMA550,3.0SMCJ170CA,ZMM5.6,1.5SMCJ9.0,1.5SMCJ9.0CA,1.5SMCJ5.0C,P4SMA550CA,P6SMBJ9.0,3.0SMCJ5.0,1.5SMCJ5.0A,TGL34-11CA,CL20M45,5.0SMCJ170A,ZMD100,5.0SMCJ170C,3.0SMCJ170,TGL61-220CA,TGL41-220CA,P4SMA550C,Z3SMC10,P4SMA550A,SZ3C6.2,TGL41-200A,L.0SMBJ5.0,SMF8.5CA,SMF220CA,TPSMA6L8.5A,SMZ6.2,ZMM6.2,Z1SMA5.6,3.0SMCJ5.0A,3.0SMCJ5.0C,1.5SMCJ5.0CA,Z3SMC11,ZMY1,SZ3C1,P4SMA220A,3.0SMCJ8.5A,P4SMA220C,3.0SMCJ8.5C,Z3SMC200,CL10MD,P6SMBJ8.5,TGL34-10CA,1.5SMC440A,P4SMA220,L.0SMBJ120CA,TGL61-11CA,TGL61-220C,CL20M35,P4SMAJ170,1.5SMC550C,TGL41-10CA,TPSMA6L9.0A,TGL41-6.8,1.5SMC550A,Z2SMB6.8,SMZ5.6,MM1Z4736A,TGL34-200A,1.5SMCJ8.5C,TGL34-200C,SMF170CA,P4SMAJ9.0C,1.5SMCJ8.5A,P4SMAJ9.0A,P6SMBJ9.0C,TGL34-200,1.5SMCJ9.0C,1.5SMC220A,TGL41-11C,TGL200CF10,Z1SMA10,1.5SMC220C,TGL41-11A,P4SMAJ5.0,TGL61-6.8C,P6SMB550C,TGL200CF06,Z1SMA11,TGL61-6.8A,BR100-04LLD,P6SMB550A,TGL200CF08,MM1Z4735A,TGL34-6.8CA,P6SMBJ9.0A,ZMY4.3G,1.5SMC550CA,TGL61-11,TGL61-10,TGL34-200CA,TGL41-6.8CA,TGL61-6.8CA,TGL41-11CA,TGL41-220C,3.0SMCJ5.0CA,1.5SMCJ8.5CA,TGL61-520,P4SMAJ8.5C,1.5SMCJ9.0A,P4SMAJ8.5A,MM1Z4734A,TGL200CU06,TGL200CU08,P6SMB220,1.5SMCJ170CA,TGL34-100,ZMY9.1G,5.0SMCJ170,Z2SMB11,L.0SMBJ8.5CA,1.5SMCJ5.0,P6SMBJ5.0CA,3.0SMCJ9.0CA,SMZ11,Z2SMB10,SZ3C10,SZ3C11,TGL41-220,ZMM1,ZMD3.9,P4SMAJ5.0A,P4SMAJ5.0C,1.5SMCJ170,TGL41-10C,TGL41-22OA,SMZ10,P6SMBJ9.0CA,P6SMB550CA,Z1SMA1,1.5SMC220CA,TGL41-10A,P4SMAJ170CA,3.0SMCJ170C,TGL200CU10,3.0SMCJ170A,MM1Z4756A
ROHM(罗姆)SiC(碳化硅)MOSFET选型指南(英文)
目录- SiC MOSFETs
型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KE,SCT4036KW7,SCT2280KEHR,SCT2280KE,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4036KW7HR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT3105KL,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR
【经验】SiC-MOSFET与IGBT的区别
本章将针对ROHM推出的SiC-MOSFET与IGBT的区别进行介绍。SiC-MOSFET在Vd-Id特性方面,导通电阻特性的变化呈直线型,因此在低电流范围优于IGBT。SiC-MOSFET的开关损耗大大低于IGBT。
设计经验 发布时间 : 2018-12-24
碳化硅MOS管(SiC-MOSFET)的特征
本文通过与Si功率元器件的比较,来说明SiC-MOSFET的耐压范围。
技术探讨 发布时间 : 2024-07-17
电子商城
登录 | 立即注册
提交评论