电动游艇——零排放水上运动,电机驱动由SiC-MOSFET DIF120SIC022-AQ提供动力
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在沿海地区运营的大量游艇要求减少燃烧排放和噪音污染。解决方案是采用一个全电动推进系统,它是零排放,噪音和振动更小,因此提供更清洁,更高效的航行。这些电动推进系统的加速度、速度和效率提供了无与伦比的航行体验,并为船舶设计和技术树立了新的标准。
德欧泰克的SiC-MOSFET DIF120SIC022-AQ是高效船形驱动逆变器的完美器件。它在100℃的外壳温度下提供1200V的漏源电压和85A的连续漏电流。它采用4脚TO-247封装,配备开尔文源(Kelvin)触点。这使得可以实现高速开关,减少功率损耗和有高可靠运行。它非常适合用于电动游艇的高压电池,现在正被海军部门采用。
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本文由玉鹤甘茗转载自DIOTEC(德欧泰克半导体公众号),原文标题为:电动游艇——零排放水上运动,电机驱动由SiC-MOSFET DIF120SIC022-AQ提供动力,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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P247 3D步骤
DIOTEC - 场效应晶体管,碳化硅肖特基二极管,MOSFETS器件,标准回收整流器,SIC MOSFETS,STANDARD RECOVERY RECTIFIERS,SIC SCHOTTKY DIODES,FIELD EFFECT TRANSISTORS,MOSFETS,SIC MOSFET,DIW085N06,SICW20C120,PWY8012,DIF120SIC053-AQ,DIW085N06-Q,DIW012N65,PW4516,SICW40C120,DIW120SIC059-AQ,PW4512,DIW030N65K
家用和商用电动汽车充电器采用德欧泰克的DIF120SIC053-AQ实现缩小尺寸
德欧泰克推出的SiC-MOSFET DIF120SIC053-AQ在高达1200 V的高电压水平下提供非常低的开关损耗。导通电阻小于53 mΩ,总栅极电荷小于121 nC。它采用TO-247封装,带第四引脚,即开尔文(Kelvin)源。
P240 3D步骤
DIOTEC - 场效应晶体管,碳化硅肖特基二极管,SCHOTTKY DIODES,TRANSIENT VOLTAGE SUPPRESSOR DIODES,肖特基,超快恢复整流器,STANDARD RECOVERY RECTIFIERS,FIELD EFFECT TRANSISTORS,MOSFETS,SUPERFAST RECOVERY RECTIFIERS,MOSFETS器件,瞬态电压抑制器二极管,标准回收整流器,SIC SCHOTTKY DIODES,FAST RECOVERY RECTIFIERS,快恢复二极管,S15MYD2,LDP02-26AYD2R-AQ,SK2045CD2,FR20CYD2,LDP01-42CAYD2-AQ,SK3050CD2,S16MSD2,SK2080CD2,SI20C120D2,LDP01-68AYD2-AQ,LDP01-68AYD2R-AQ,UGB8GT,LDP02-26AYD2-AQ,SK20100CD2,DI7A5N65D2K,SK10100D2R,FR20GKD2,SK1840D2R,SK2060CD2,30CTQ045S,LDP02-68AYD2-AQ,LDP01-26CAYD2-AQ,LDP01-39CAYD2R-AQ,SK2040YD2,S16GSD2,SK1060D2,LDP01-39CAYD2-AQ,SK4045YD2-3G-AQ,SK2020YD2,FR20DKD2,S15GYD2,SK1545YD2R,DI200N10D2,SK1545YD2-3G,SK1045D2-3G-Q,LDP02-30AYD2-AQ,SK20100CD2R,S15JYD2,UGB8AT,S16BSD2,SK30100CD2,SK30100CD2-3G,L118,S15BYD2,SK2045CD2-3G,S16JSD2,LDP01-39AYD2-AQ,LDP01-26AYD2R-AQ,LDP01-68CAYD2-AQ,LDP02-56AYD2-AQ,SK4045YD2-3G,SK20100CD2-AQ,LDP01-28AYD2-AQ,SK3080CD2,SK2045CD2-3G-AQ,UGB8JT,S16ASD2,SK3040CD2,SK4045CD2-3G-AQ,UGB8BT,LDP02-28CAYD2R-AQ,SK1080D2,SK1050D2,SK4045CD2-3G,LDP02-39AYD2-AQ,S15AYD2,SK1845D2,SK3040CD2R,MBRS20200CT,SK3020CD2,SK3060CD2,DI7A5N65D2K-AQ,SK1060D2R,LDP02-33AYD2R-AQ,LDP01-39AYD2R-AQ,FR20DYD2,DI200N04D2,SK2050CD2,S16DSD2,LDP02-33AYD2-AQ,DI170N04D2-AQ,SK4050CD2-3G,SK2040YD2R,S15DYD2,SK2060CD2R,FR20GAD2,UGB16JCD2,LDP01-42CAYD2R-AQ,SK4045YD2-3G-Q,S15KYD2,SK2060CD2-AQ,LDP01-33AYD2-AQ,LDP01-28AYD2R-AQ,UGB8DT,DI110N06D2,S16KSD2,FR20DAD2,30CTQ040S,LDP02-28AYD2-AQ,FR20AYD2,SK1840D2,LDP02-42CAYD2-AQ,SK2030YD2,SK1080D2R,SK2545YD2-3G-Q,FR20FYD2,SK10100D2,SK3045CD2-3G,SK2545YD2-3G,SK4060CD2-3G,SK2545YD2-3G-AQ,30CTQ035S,LDP01-26AYD2-AQ,SK1845D2-3G,SK1045D2-3G,LDP01-68CAYD2R-AQ
P220 3D步骤
DIOTEC - 标准恢复整流器;快速恢复整流器;超快速恢复整流器;肖特基二极管;SIC肖特基二极管;MOSFET;场效应晶体管,STANDARD RECOVERY RECTIFIERS;FAST RECOVERY RECTIFIERS;SUPERFAST RECOVERY RECTIFIERS;SCHOTTKY DIODES;SIC SCHOTTKY DIODES;MOSFETS;FIELD EFFECT TRANSISTORS,DIT050N06,MBR30100CT,FT2000AD,SBT1060,MBR20150CT,FT2000AA,FT2000AB,SBCT1045,KT20A150,SBCT30200,SBCT2060,MBR30200CT,DIT195N08,SBCT1050,SBCT2020,DIT120N08,FT2000AG,SBCT30200-AQ,PCT1600A,SBT1845-3G,SIT08C065,SBCT1090,SBT1090,MBR20100CT,PT800M,SBT1050,PT800K,ER520CT,DIT095N08,PT800J,PT800D,KT20A120,PT800G,MBR30150CT,PT800A,MUR860,SBCT2050,SBT10100-3G,PT800B,SBT1840,SBCT1040,RHRP3060G,SBCT30150,SBT1845,FT2000KB-Q,MUR1620CT,SBT1045-3G,DIT080N08-AQ,MUR2060CT,MBR20200CT,SBCT2090,FT2000KG,L244,SIT12C065,FT2000KA,FT2000KB,MBR10200CT,DIT085N10,DIT100N10,PST1600A,DIT090N06,DIT085N10-AQ,FT2000KD,SBCT30100,SIT20C065,SBCT2040,SBCT1030,KT20K150,DIT072N08-Q,SBCT2045,SBCT20100,DIT075N05-AQ,SBT1040-3G,UFT800J,UFT800G,SBCT10100,MUR1560,30CTQ200,30CTQ045,UFT800C,UFT800D,SBCT1060,UFT800A,SBT1840-3G,UFT800B,SBCT2030,SBCT1020,KT20K120,MBR10100,DIT150N03,SIT10C065,PT3000T
SiC-MOSFET和Si-MOSFET、IGBT的区别
功率转换电路中的晶体管的作用非常重要,为进一步实现低损耗与应用尺寸小型化,一直在进行各种改良。SiC功率元器件半导体的优势如:低损耗、高速开关、高温工作等,显而易见这些优势是非常有用的。本文介绍SiC-MOSFET和Si-MOSFET、IGBT的的区别。
碳化硅MOS管(SiC-MOSFET)的特征
本文通过与Si功率元器件的比较,来说明SiC-MOSFET的耐压范围。
Littelfuse SiC MOSFET(LFPTN250123SXC)产品终止通知
Littelfuse发布产品终止通知,宣布因生产晶圆停产和新技术世代引入,将终止生产一系列SiC MOSFET产品。包括多个型号的半桥MOSFET和单开关MOSFET,并提供替代型号。最后一批购买截止至2025年2月28日,具体交货时间将与项目进度个案商定。
LITTELFUSE - SIC MOSFETS,单开关,SINGLE SWITCH,SIC MOSFET,HALF BRIDGE MOSFET,半桥MOSFET,MCB60P1200TLB-TUB,MCB30P1200LB-TUB,MCB20P1200LB-TUB,MCB6011200TZ-TUB,MCB40P1200LB-TUB,IXFN50N120SK,MCB60I1200TZ-TUB,IXFN70N120SK,IXFN75N120SK,IXFN50N120SIC,MCB40P1200LB-TRR,IXFN55N120SK,IXFN30N120SK,MCB60P1200TLB-TRR,MCB20P1200LB-TRR,MCB30P1200LB-TRR,IXFN27N120SK
【经验】SiC-MOSFET与IGBT的区别
本章将针对ROHM推出的SiC-MOSFET与IGBT的区别进行介绍。SiC-MOSFET在Vd-Id特性方面,导通电阻特性的变化呈直线型,因此在低电流范围优于IGBT。SiC-MOSFET的开关损耗大大低于IGBT。
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