The Road Ahead: DRAM Fueling Automotive Trends
The automotive industry is undergoing a massive transformation, driven by technological advancements and changing consumer expectations. Among the most significant trends shaping this evolution are advanced driver-assistance systems (ADAS), electrification, and rich infotainment systems. In our last blog post, we highlighted the role of FLASH memory in the automotive industry. Now, we dive deeper into how DRAM is chipping in to advance these industry trends.
The global automotive memory market is set to expand significantly, with analysts projecting it to grow to USD 37.45 billion by 2031. According to Yole Group, DRAM and NAND flash are expected to dominate the automotive memory market, accounting for a combined 80% share. DRAM alone is projected to capture 41%, underscoring its critical role in automotive applications.
The Surge in Memory Demand
The proliferation of new automotive technologies—radar, LiDAR, high-resolution imaging, and object recognition—requires high-density memory for applications inside the vehicle cabin, as well as for the external monitoring of the vehicle’s environment. These technologies are foundational for advanced driver-assistance systems (ADAS) and autonomous driving, where real-time data processing and rapid decision-making are crucial. The immense amount of computational power that is required demands reliable memory. Self-driving cars, for instance, are expected to run on about one billion lines of code according to Jaguar Land Rover, a stark contrast to the 145,000 lines used in NASA's Apollo 11 mission to land the spacecraft on the moon. This surge in code complexity necessitates robust memory solutions to store and process vast amounts of data in real-time.
The bill of materials (BOM) for memory and storage components for Level 2 autonomous vehicles is expected to double by 2025 compared to 2023, surpassing $100 due to the increased gigabyte content in these vehicles. According to market projections, over 97 million cars will be sold in 2025, each equipped with an average of 16 gigabytes (GB) of DRAM and 204GB of NAND. Higher-end vehicles will probably reach 2 terabytes (TB) of DRAM + NAND. This is a substantial increase from 2021 when cars typically featured around 5.3GB of DRAM and 50GB of NAND.
Enriched Cabins
Another significant trend is the enhancement of infotainment systems, transforming vehicles into extensions of our digital lifestyles. Modern infotainment systems offer rich, interactive experiences that require substantial memory and storage. This shift towards a more connected and immersive in-car experience further drives the demand for advanced DRAM solutions.
DDR3 and LPDDR3 are commonly used in these systems, balancing performance with power efficiency.
Electric vehicles
While the electrification trend in itself does not directly impact memory and storage requirements, the associated technologies do. Electric vehicles (EVs) typically come with higher levels of ADAS/autonomy features and more sophisticated infotainment systems. These advancements drive the need for more memory and storage to support the enhanced computational demands. As EVs become more common, the role of DRAM in ensuring seamless operation and safety increases. Low-power DRAM, like LPDDR3, is favored for its low power consumption, making it ideal for battery-operated systems in EVs. As EVs often feature more advanced infotainment and ADAS capabilities, the need for efficient memory solutions is even more pronounced.
DRAM for automotive applications
While DDR5 is the new kid on the block taking on the memory challenges in the latest advanced state-of-the-art automotive technologies, the previous generations continue to deliver on quality, reliability, and cost-effectiveness. DDR4, with its high speeds and efficiency, is particularly suited for high-resolution image processing and real-time data analysis required by ADAS and autonomous driving. DDR4's bandwidth and power efficiency contribute to system performance and reliability. However, DDR2 and DDR3 still get specified for less complex applications due to their cost-effectiveness. For example, DDR3 is widely used in automotive systems for tasks that require moderate to high data processing capabilities. With its higher data transfer rates, compared to DDR2, DDR3 supports more complex ADAS functions, such as advanced image processing and sensor fusion. Automotive applications also demand memory solutions that withstand extreme temperatures, vibrations, and other harsh conditions. Automotive-grade DDR2, DDR3, and DDR4 DRAM are designed to meet these requirements, providing consistent performance and longevity. In previous blog posts, we elaborated on automotive grade 0 through 3 and wide/automotive temperature range memory components.
As the automotive industry balances the integration of cutting-edge innovations with the reliable performance of established technologies, the different generations of DRAM technologies are fundamental to the current landscape of automotive safety and infotainment systems. By providing the necessary speed, capacity, and reliability, DDR2, DDR3, DDR4, and DDR5 DRAM support the data processing and decision-making required for older dashboard technologies and advanced driver-assistance and autonomous driving features.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由三年不鸣转载自SMART (smartsemi News),原文标题为:The Road Ahead: DRAM Fueling Automotive Trends,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
2024年Q3-DRAM与SSDA市场态势剖析:AI驱动下的涨势与变数
AI的蓬勃发展持续推动半导体和IT产业的成长,尤其在存储领域,生成式AI应用助长了市场对高性能运算方面的需求。从数据中心的AI服务器到消费端的AI PC,内存运算和存储性能表现至关重要,成为提升AI应用落地的关键推手。
2024年Q1 DRAM与SSD市场趋势及展望:存储产业强劲反弹
回顾2023年,受到整年持续的通货膨胀及地缘政治紧绷情势的影响,全球经济大幅放缓。值得注意的是,存储产业预估将一甩近年来的低迷,呈现正面态势并强劲反弹,这股复苏力度归功于AI相关技术的持续进展,有助于扩大工业和消费电子领域对密集型内存应用的需求。迈入2024年,请参考存储市场主要应用的价格更新和市场前景。本文中SMART与您分享2024年Q1 DRAM与SSD市场趋势及展望:存储产业强劲反弹。
Managing DRAM Supply in the Quarters Ahead
The Outlook - DRAM Prices Up. Legacy Supply Tightening. Shift to Leading-Edge Generation Continues. The top 3 DRAM suppliers and top 3 market segments shape the DRAM market.
Zetta Memory‐ EEPROM/NOR/NAND/DRAM
型号- ZD24C512,ZD24C1M,ZDSD02G,ZDV4256M16A‐13DPH,ZDSD04G,ZD24C256,ZDV4256M16A‐11DPH,ZDSD64G,ZDSD32G,ZDSD256G,ZD24C64,ZD24C02,ZDEMDCM032G-84A8,ZDSD16G,ZD24C08,ZD25Q16C,ZDV4256M16A‐11IPH,ZDSD08G,ZDEMDCM016G-84A8,ZDV4256M16A‐13IPH,ZDV4128M16A‐13DPH,NB25Q40A,ZD25WQ80C,ZDV4128M16A‐13IPH,ZDV4128M16A‐11IPH,ZDV4128M16A‐11DPH,ZD24C128,ZDSD01G,ZD25WQ16C,ZD24C2M,ZDSD128G,ZD25Q128C,ZDV4256M16A‐14DPH,ZD24C32,ZD25WQ32C,ZD24C16,ZDV4256M16A‐14IPH,ZDEMDIW008G-84A8,ZD25Q80C,ZD25Q32C,ZD25Q64B,ZDV4128M16A‐14IPH,ZDEMMC04G,ZDEMDIW016G-95A8,ZDEMMC08G,ZD25WD20C,ZDEMDCM064G-95A8,ZDV4128M16A‐14DPH
Longsys Unveils New Products, PTM Business Model Drives Innovation in Automotive Storage
In Germany—a powerhouse of the automotive and industrial sectors—Longsys unveiled high-reliability industrial and automotive-grade products, including the xSPI NOR Flash and Automotive Grade 2 LPDDR4x. The Lexar brand showcased products like the JumpDrive dashcam USB and PCIe Gen5 SSD, covering a broader range of automotive consumer markets.
SMART提供多款DRAM内存产品,可用于IIoT,较现成的工业级DRAM成本更低
SMART的DRAM内存产品能够满足数据的指数增长以及相关的数据处理需求。智能工厂、自动化机械、智能建筑、自动化农业设备和互联交通应用都在产生大量数据,必须收集、处理、存储和分析这些数据以满足不断变化的需求。其产品非常适合为IIoT应用提供长期可靠的支持。
Alliance Memory’s Featured Products at Electronica 2022: eMMCs/DDR4 SDRAMs/1.8V Serial NOR Flash/DDR3 SDRAMs
Compliant with the JEDEC eMMC v5.1 industry standard, Alliance Memory’s eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications.
SMARTsemi DDR3 SDRAM产品获AEC-Q100 Class 2车规级可靠性认证
SMARTsemi是SMART Modular旗下的事业线,专注于长期稳定提供旧世代內存产品和工业级宽温零组件。SMARTSemi日前宣布DDR3 SDRAM正式加入Automotive Grade车规级应用行列,成为SMARTSemi扩展汽车级产品线的生力军。
SMART DRAM Memory for IIoT Applications Reliable, Trusted, Proven
型号- SR2G7UD5285SBV,ST1027UD410825-HE,SRI4097SO420825-SC,STI1027UD410893SC**,SR1026SO411625-SC,SRI5126SO451625-SC,STT1026MP411625MF,SR4G8RD5285SBV,SR2G6SO5285-SB,SRI5126SO451625-SG,ST1027SO410825HE,ST4096SO420825MF,ST2047UD410825SG,SRI4G7SO5285SB,STB4097SO420825SC,SR6G6SO5385SB,STI2046SO410825MR,ST2046SO410893-SE,ST4097MR420825MFU,SRZ4097SO420825-SB,SRZ4097SO420825-SC,STT2566MP421625NE,STI4097SO420825MF,ST2047RD420825SCV,ST4G7SO5285SB,SR2G7SO5288-SP,SR2G7SO5285SB,SRI2G7SO5288-SP,SR4G6SO5285SB,SR2G6SO5288-SP,ST2047MU410893HEV,ST1026SO410825-HE,SRI2G7UD5285SBV,SRI2G6UD5285-SB,STT2566MP421625MG,SR4G7SO5288-SP,SR4G7UD5285-SB,SR4097SO420825-SC,SR3277RD440444-SM1,SR4097SO420825-SB,SRI1G6SO5165-SB,ST8197RD440425-MF,ST5126SO451625MR,ST2047MU420825SCV,SR5126SO451625-SG,SR4096SO420825-SC,STI2046SO410825-SE,ST4097MU420825MFV,SRI2G7SO5285SB,SRI4G6UD5285-SB,STI2047UD410825SC**,ST5126SO451893SF,ST4097RD420425-HE,ST1027RD410893SGV,ST1026SO410825SG,STI2046SO410893-SE,ST5126SO451625-SC,SR2G6SO5285SB,STI1026SO410825MR,ST2047SO410825HE,ST3277RD440465-SM,ST1026MP41W672SB,SR4G7SO5285SB,STI1027SO410825SG,STT5126MP451625MR,ST2046MP42W614MB,ST1027SO410825-HE,SRI2G7UD5285SB,ST8197RD440425-SC,SRI4G6SO5285-SB,ST1637RD440465-SM,SR1G6SO5165-SB,SRI2047RD420425-SE,SR4G6SO5288-SP,SRI4G7SO5288-SP,ST4097SO420825SC,ST5126SO451625-HE,SR4G7UD5285SB,ST4097RD420825HCV,STI4097UD420825SC,STI1026SO410825SG,ST1026MP41W693HC,SRI4G7UD5285SBV,SR3G6SO5385SB,SR4G8RD5285HAV,ST4097RD420425-MR,SRI4097RD420425-SE,SR4G6SO5285-SB,ST1026SO410893-SE,SR1G6SO5168-SP,SR2047RD410825-SE,ST1027UD451893SF,ST5127UD451893SF,SRI1G6UD5165-SB,SR6G6SO5385MB,SRI2047RD410825-SE,ST4097UD420825SCU,ST1027SO410825SG,ST2047SO420825SC,SRI2G6SO5285-SB,STI4097SO420825SC,STI4096SO420825-HC,SR6G7SO5385SB,ST2047MR420825SCV,SRI8197RD440425-SC,ST1026SO410825MR,ST4097RD420425-SE,ST2046SO410825-HE,SR4G7UD5285SBV,ST1027UD410825SG,ST2047SO410825-HE,ST2046MP42W625MF,SRI4096SO420825-SC,ST8197RD440425MFV,SR4G7UD5288MDV,SR2046SO420825-SC,SR2G7SO5285MA,STT4097RD420825MF,SR2G7SO5285-SB,ST8197RD48D425MFV
全球第二大独立内存模组制造商世迈科技正式授权世强代理其DRAM、SSD等存储产品
7月,全球第二大独立内存模组制造商SMART(世迈科技 NASDAQ:SMOD)与世强硬创电商签署授权代理协议,授权其代理旗SSD、DRAM、DRAM DDR5等产品。
SMARTsemi Automotive Journey Extends with new AEC-Q100 Class 2 Compliant 4Gb DDR3 x8 and x16 SDRAM Components
This article mainly introduces SMARTsemi‘s new 4Gb DDR3 x8 and x16 SDRAM products with the AECQ-100 standard, and further expands the application for the automotive market
Alliance DRAM/SRAM/闪存&eMMC选型指南
目录- Synchronous DRAM DDR1 DRAM DDR2 DRAM DDR3 SDRAM DDR4 MOBILE LOW POWER SDRAM/DDR LPDDR4/LPDDR4X Fast Asynchronous SRAM Low Power Asynchronous SRAM Parallel 5V NOR Flash SLC Parallel NAND Flash Serial NOR Flash Serial NAND Flash eMMC pSRAM PART NUMBERING SYSTEM PACKAGING QUANTITIES
型号- AS6C2008A,AS4C8M16SA-7TXN,AS6C62256-55SXN,AS4C64M4SA-6TIN,AS4C2M32S-7BXN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS6C2008A-55STIN,AS4C16M16SA-6TXN,AS4C256M16D3LC,AS7C31025C-12JIN,AS4C16M32MSB,AS7C31024B-XXTCN,AS4C16M32MSA,M29F160FT55N3E2,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,AS25F364MQ-10WIN,N25Q064A13ESFA0F,AS4C32M8D1-5TXN,AS9F31G08SA-25BIN,AS7C1026C-XXJCN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS1C1M16P-70BIN,AS4C25632MD4V-062BAN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS4C64M4SA-7TCN,AS4C32M8SA-7TCN,AS6C2008A-55TIN,AS4C16M16SA-6BXN,AS4C512M16D3LC-12BXN,AS7C1026B-XXTIN,AS7C325632-10BIN,AS6C2016-55ZIN,AS1C1M16PL-70BIN,AS4C16M16SA-7TXN,N25Q064A13EF8H0E,AS6C4016B-45BIN,AS4C512M16D3LB,AS4C512M16D3LC,AS4C512M16D3LA,AS4C4M16D1A,AS4C512M8D4A-75BXN,AS4C512M16D4A-62BXN,AS4C4M32MSA,AS7C34096B-10BIN,AS6C8016-55BIN*,AS4C256M8D2,AS4C4M16SA-7TXN,AS6C1008-55PCN,AS7C164A-15PXN,AS1C8M16PL-70BIN,AS4C64M16D1,AS6C1008-55SIN,AS4C256M16MD4V-062BAN,N25Q032A13ESCA0F,AS7C34098B,ASFC4G31M-51BIN,AS5F32G04SNDB-08LIN,AS7C34098A,AS4C4M16SA-6BXN,N25Q064A13EF640E,AS7C38098A-10BIN,AS7C3256A-XXTIN,AS4C32M16D3-12BXN,M45PE80-VMP6G,AS4C8M16SA-6TXN,AS4C32M16D3L-12BXN,AS7C1026B-XXTCN,AS4C64M16D2B-25BCN,AS4C128M32MD2A-25BIN,AS7C4098A-XXJXN,AS4C512M16MD4V-053BIN,AS7C256A-XXTIN,AS4C1G8D3LA-10BXN,AS4C32M16SB-7TCN,AS4C8M32S-6TXN,AS4C256M16D3C-93BXN,AS4C128M16MD2A-25BIN,AS7C4096A-XXTXN,AS4C512M8D4-83BXN,AS4C16M16MSA-6BIN,AS6C1008-55TIN,AS6C8016B,AS7C38098A-10TIN,AS4C64M16MD1A-5BIN,A7C351232-10BIN,AS6C8016,AS7C34096A,AS9F14G08SA-45BIN,AS4C2M32S-6BXN,AS7C34096B,AS7C34096B-10TIN,AS6C1616B-45BIN,AS4C32M16MD1A,AS6C1616-55TIN,AS7C316098A,AS4C16M16MD1-6BCN,AS4C256M32MD4-062BAN,AS6C1016-55BIN,AS29CF040-55CCIN,AS6C4008-55SIN,AS4C512M8D3LC-12BXN,AS6C4008-55PCN,AS6C8016-55ZIN,AS4C64M16D3LB,AS4C25616MD4V-062BAN,AS6C1616B-55BIN,AS4C8M32MSB,AS7C316096B-10TIN,AS4C128M8D3B-12BXN,AS4C8M32MSA,AS4C4M16SA-7B2CN,AS5F31G04SND-08LIN,ASFC16G31M-51BIN,AS4C8M16SA-6TAN,AS4C32M16D1A-5TXN,AS4C128M16MD4V-062BAN,AS6C4008-70SAN,AS6C8008B-45BIN,AS4C32M16SB-7TXN,AS7C31024B-XXTJCN,AS4C8M32MD2A-25BCN,AS4C64M16MD1A,AS7C32098A-XXTXN,AS25F304MD-10S1IN,AS7C3256A,AS25F1128MQ-70SIN,AS6C8016B-55ZIN,AS6C1608B-45BIN,M45PE16-VMW6TG,AS6C1016,AS6C4008-55BIN,AS7C351232,AS4C32M32MD1A,AS7C316096A-10TIN,AS4C8M16MSB-6BIN,M45PE20-VMN6P,AS4C256M16D3C-93BCN,AS4C16M32SB-6BXN,AS7C38096A-10TIN,AS4C8M16SA-6TCN,AS4C64M16D1-6TXN,AS6CE4016B-45BIN,AS6C2016,AS6C1616B-45TIN,AS7C256B-XXPIN,AS4C16M16MSB,AS7C31026C-12BIN,AS7C1024B-XXJIN,AS7C34098A-XXTXN,AS7C1025B-XXJCN,AS4C8M16SA-6BAN,AS4C256M16MD4-062BAN,AS6C62256-55STXN,AS4C16M16SB-6TXN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C256M16D3C,AS4C256M16D4A-62BXN,AS7C316098AB,AS6C8008-55ZIN,AS4C32M16D1A,AS6C2008,AS6C4008-55STIN,AS7C31026C-XXJCN,AS6C2008-55TIN,AS4C16M16MSA,AS4C16M16MSB-6BIN,AS4C4M32S,AS4C64M8D2,AS7C1026C-XXTIN,M29F800FB5AN6F2,AS4C64M8D1,AS7C316096B-10BIN,AS4C8M16SA-7BXN,AS7C31026B-XXJCN,AS7C31025B-XXJCN,AS4C32M8SA-6TXN,AS4C32M16D2A,AS7C32098A,AS4C32M16D2C,AS4C8M16D1A,AS4C64M32MD1-5BXN,AS7C1025C-15JIN,AS7C38096A-10BIN,AS4C1G16D4-062BCN,AS4C1G8D4A-62BXN,AS6C1616B-55TIN,AS4C64M32MD1,AS6C2008-55STIN,AS4C4M32S-7BXN,AS4C4M32D1A-5BXN,AS4C128M16D2-25BXN,AS6C8016B-45ZIN,AS4C16M16SB-7BXN,AS4C8M32SA,AS4C4M32SA-6TXN,AS25F316MQ-10S1IN,AS7C32096A,AS6C1008-55PIN,AS4C16M16SB-7TXN,M45PE80-VMP6TG,M29F200FB55M3F2,AS4C4M32S-6BXN,AS4C16M16SA-6BIN,M29F400FT5AN6E2,AS4C4M16SA-5TXN,AS4C32M16MD1A-5BCN,AS4C64M16D1A-6BIN,AS7C1026B,AS4C512M16D4A-62BAN,AS6C1008,AS7C513B,AS4C8M16D1,AS4C16M16SB-6BXN,AS4C128M16D3C-93BCN,M29F800FB5AN6E2,AS6C6416-55BIN,AS7C31025B-XXTJCN,AS9F14G08SA-45BAN,AS4C12816MD4V-062BAN,AS5F14G04SND-10LIN,AS6C3216A,AS7C1025B,AS9F34G08SA-25BIN,AS7C316096C-10TIN,N25Q032A13ESFA0F,AS4C32M8SA-7TXN,AS4C16M32SC-7TIN,AS4C32M16SC-7TIN,AS4C2M32SA-6TXN,AS6C6264-55SCN,AS4C4M16SA-6B2XN,AS4C32M16D1-5BXN,AS4C8M16SA-7BCN,AS4C8M32SA-7BXN,AS4C8M16SA-6TIN,AS7C1024B,AS7C34098B-10TIN,AS4C32M16D2C-25BXN,M29F400FB55M3F2,AS4C16M16D1-5BXN,AS7C31026B-XXTCN,AS6C4016,AS4C4M32SA-7TXN,AS4C1M16S,AS7C3256A-XXJIN,AS9F18G08SA-45BAN,AS9F32G08SA-25BIN,AS4C4M16SA-7TCN,AS7C256A-XXJIN,AS7C1026B-XXJCN,AS4C1M16S-7TXN,AS4C32M32MD1A-5BIN,AS7C38096B,AS4C128M16D3C,AS4C64M4SA-7TXN,N25Q064A13EF8A0E,N25Q064A13EF8A0F,AS6C4008,AS4C64M8SC-7TIN,AS7C38096A,AS4C16M32MD1,AS4C16M16SA-6TIN,AS4C8M16D1-5BXN,AS4C8M16D1A-5TXN,AS4C256M8D2A-25BCN,AS7C4098A-XXTXN,AS5F32G04SNDA-08LIN,AS5F34G04SNDA-08LIN,AS6C1616B,AS4C16M32MD1-5BXN,AS4C512M16D3LA-10BXN,AS4C1M16S-6TXN,AS4C64M4SA-6TXN,AS4C8M16MSA-6BIN,AS6C2016-55BIN,M29F400FB55N3E2,AS6C4016B-45ZIN,AS1C512K16PL-70BIN,AS7C316096C-10BIN,AS4C8M16SA-6BIN,M29F400FB55N3F2,AS7C3513B-XXTCN,AS7C513B-XXTCN,AS4C1G8D4-75BXN,AS6C1008-55STIN,AS4C512M8D3LC-10BAN,AS4C128M32MD2-18BIN,AS7C38098A,AS4C16M16SA-7BCN,AS4C4M16SA-6TIN,AS4C128M16D2,AS7
电子商城
现货市场
服务
使用FloTHERM和Smart CFD软件,提供前期热仿真模拟、结构设计调整建议、中期样品测试和后期生产供应的一站式服务,热仿真技术团队专业指导。
实验室地址: 深圳 提交需求>
针对电子系统中的详细传热和流体流动模拟进行优化,可准确分析复杂的两相冷却组件(如热管/均热板),量化利用率,并警告是否干涸。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论