高耐压超结MOS场效应管LC65R600F,漏源导通电阻520mΩ,栅源电压±30V,TO-220F封装
凌讯微电子品牌LC65R600在TO-220F封装里采用的是1颗芯片,电性参数为7A650V的一款高耐压超结MOS管(COOL MOS)。
LC65R600的漏源导通电阻(RDS On)为520mΩ,栅源电压(Vgs)为±30V,FET类型为N沟道,其最低工作温度为-50℃,最高工作温度为+150℃。共有3条引脚,2条线。超结MOSFET与传统的VDMOS相比,具有导通电阻低、开关速度快、芯片体积小、发热低的特点。
以上就是关于LC65R600 TO-220F超结MOS(COOL MOS)的介绍。
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超结MOS是什么?有什么作用!
超结MOS也叫COOlMOS,是在普通MOS基础上使用新型超结结构设计的MOS管。超结MOS管主要在500V、600V、650V及以上高电压场合使用。超结MOSFET与传统的VDMOS相比,具有导通电阻低、开关速度快、芯片体积小、发热低的特点。
超结MOS是什么?有什么作用?
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凌汛微LC60R130F COOL MOS型号推荐
凌讯微电子LC60R130F COOL MOS ,封装:TO-220F,I D:30AV, DSS :600V,RDSON-typ VGS=10V :120mΩ。
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凌汛微电子MOS和肖特基二极管产品适用于LLC适配器应用电路
针对LLC电路的特点需求,推荐以下凌汛微电子的产品:平面高压MOS系列、超结COOL MOS系列、低压MOS系列和肖特基二极管系列。
凌讯COOL MOS系列产品具有更快开关速度,更低导通损耗等特点,满足现代电源适配器需求
凌讯的COOL MOS系列产品具有更快的开关速度,更低的导通损耗、极低的栅极电荷(Qg),从而降低了器件的功率损耗,提高系统效率。同时,由于采用了自主创新技术,优化了器件的开关特性,器件在系统中具有更好的EMI表现。另外,多样的封装形式能满足您的不同需求。
What Is A Super Junction MOS? What‘s The Use!
Compared with traditional VDMOS, super junction MOSFETs have the characteristics of low conduction resistance, fast switching speed, small chip size, and low heat generation. Generally speaking, the on resistance of a super junction MOSFET with the same current and voltage specifications is only about half of that of a traditional VDMOS, and the device‘s on and off speeds are reduced by more than 30% compared to traditional VDMOS. These characteristics can enable super junction MOSFETs to have better temperature rise and efficiency performance when replacing traditional VDMOS.
凌讯微电子COOL MOS管选型表
凌讯微电子提供全系8寸的COOL MOS管的选型:650V以多层外延为主,600V平台有部份规格为深沟槽工艺,规格包含60/65R040-60/65R1K0全系完善
产品型号
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品类
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Iᴅ(A)
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Vᴅss(V) Min.
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Vɢss(V) Min.
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Vɢs(th)(V) Min.
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Vɢs(th)(V) Max.
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RDS(ON)10V(mΩ) Typ
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RDS(ON)10V(mΩ) MAX
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Die Code
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是否量产
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Die
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封装
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LC65R1K0F
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COOL MOS管
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5
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650
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30
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2
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4
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800
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1000
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JS
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否
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1
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TO-220F
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选型表 - 凌讯微电子 立即选型
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凌讯微电子MOS系列击穿电压覆盖20V至900V,配合先进封装技术,提供2A至200A的电流选择范围
凌讯微电子中的MOS系列、击穿电压覆盖20V至900V,配合先进的封装技术,为您提供2A至200A的电流选择范围,持续改进MOSFET在电能转换过程中的系统效率和功率密度以及在苛刻环境下开关过程中的抗冲击雪崩耐量,实现快速、平稳的电源管理及电能转换。
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