【元件】高性能、高可靠，主打锂电保护应用！纳芯微推出全新CSP封装MOSFET: NPM12023A

时间： 2024-09-26 来源：纳芯微电子公众号

技术问答

近日，纳芯微全新推出CSP封装12V共漏极双N沟道MOSFET——NPM12023A系列产品，优异的短路过流能力与雪崩过压能力、更强的机械压力耐受能力，可以为便携式锂电设备充放电提供全面的保护。

纳芯微全新CSP封装MOSFET系列产品，采用自有专利芯片结构设计，综合性能优于业内传统Trench VDMOS工艺，拥有超低导通阻抗及高ESD（>2kV）保护功能等特点。该技术兼顾了产品小型化和高过流要求，同时解决了传统CSP封装芯片机械强度低、雪崩能量小、生产组装加工困难等问题，为客户提供更安全、更可靠的产品，简化客户的设计。

图1：纳芯微CSP封装MOSFET产品优势

便携式锂电设备对于充放电保护的要求：

高强度，小体积

智能手机、平板电脑等便携式锂电设备变得比以前更轻薄，功能更强大，同时对设备的充放电功率要求也越来越高：从最初的3-5W，到现在超过100W的充放电功率，使人们在享受更便捷的生活的同时，提高了充电效率，减少了电量焦虑的困扰。充放电功率的不断提高，对用于锂电池保护的MOSFET的性能提出了更高的挑战：如何在降低内阻的同时，兼顾机械应力及雪崩能量等要求，成为聚焦的重点。

图2：CSP封装MOSFET典型应用场景

技术特点

专有的CSP封装技术

传统CSP封装结构为了降低衬底电阻，采用了芯片厚度减薄的方法，从而降低了该封装结构的机械强度，随之而来的，在生产组装过程中，可能会造成芯片翘曲变形甚者产生裂纹，从而导致应用端不良等问题。

纳芯微全新CSP封装系列产品在设计之初就在产品结构上做了调整，使导通电流平行于芯片表面，缩短电流路径，从而降低导通电阻，也就从根源上解决了CSP封装MOSFET的机械强度问题（耐受机械压力>60N），更高的机械强度，可以帮助芯片在兼顾轻薄化、小型化的基础上，最大程度上降低使用过程中的变形、裂片等问题，保证了产品的可靠性和安全性。

图3：纳芯微CSP封装结构与传统CSP封装结构对比

高抗短路和雪崩的能力

作为锂电池保护电路中的关键器件，CSP封装MOSFET的短路过流能力和雪崩过压能力也是衡量该芯片的重要参数指标。相比市场上其他产品，纳芯微该系列产品具备非常好的抗短路和雪崩的能力：短路电流测试达到280A，雪崩能力测试>30A（225mJ）。

图4：纳芯微CSP封装MOSFET短路及雪崩测试

纳芯微CSP封装MOSFET产品选型表

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本文由ll转载自纳芯微电子公众号，原文标题为:高性能、高可靠，主打锂电保护应用！纳芯微推出全新CSP封装MOSFET: NPM12023A，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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商品及供应商介绍 - ROHM PDF 英文下载

推荐一款内部集成MOS管的锂电池充放电保护芯片？尺寸小

推荐SGMICRO的单节锂电池保护电路SGM41000,内置MOSFET,UTDFN-1.5×2-6L（1.5X2mm)薄型封装，工作温度-40°Cto+85°C，适合可穿戴设备。参考SGMicro（圣邦微）SGM41000 电池保护芯片数据手册

技术问答发布时间 : 2020-04-17

SMD表面贴片分立器件专家科信签约世强先进，提供Mosfet、二极管、三极管、IC等产品

2022年4月20日，科信与世强先进（深圳）科技股份有限公司（下称“世强先进”）签署合作协议，授权世强先进代理其旗下mosfet、二极管、三极管、ic等全线产品。据了解，科信专业从事SMD表面贴片分立器件生产、研发、销售，30多年来一直专注SMD表面贴片分立器件小型化，其产品广泛应用于各类愈加智能化与模块化的电子设备，如安防、数码、智能手机、工控、汽车和家电。

公司动态发布时间 : 2022-08-02

【产品】中微半导体全新CSP封装MOSFET，满足锂电池高可靠与高耐受要求

中微半导体基于自主研发专利推出全新CSP封装MOSFET产品，综合性能远超传统Trench VDMOS，拥有体积小、散热性好、电性连接寄生参数小等特点，主要针对单节锂电池保护应用开发设计，适用于手机、平板电脑、可穿戴设备等，满足锂电池高可靠与高耐受要求。

新产品发布时间 : 2022-04-08

【选型】智能手机射频信号收发电路上的晶体管、二极管、MOSFET型号推荐

Central推出的小信号晶体管(CMST2222A/CMUT2222A/CMUT3410/CMUT7410)；MOSFET(CEDM8004/CMLDM7002A/CMLDM8002A/CMNDM7001/CMNDM8001)；高速开关二极管(CMDD2004/CMLD4448/CMAD4448)和齐纳二极管(CMOZ3V3 thru CMOZ15V)，可以应用在智能手机的射频收发电路中。

器件选型发布时间 : 2019-07-17

DFN1006系列小型、高性能MOSFET

型号- RV1C001ZP,RV2C002UN,RV1C002UN,RV1C002UN HCO,RV2E014AJ,RV2C014BC,RV3C002UN,RV1C001ZP HCO,RV2C010UN,RV3C001ZP,RV2E012AT,RV1L004GN,RV1E008AJ,RV2L009GNRV2C001ZP

商品及供应商介绍 - ROHM - 02.2016 PDF 中文下载

【产品】内部集成低内阻N沟道MOSFET的过压保护开关，宽输入电压范围2.5V-28V

圣邦微推出的SGM40659,SGM40660,SGM40661过电压保护器件内部集成了一个导通电阻低至27mΩ（典型值）的高电流MOSFET，能主动保护低压系统免受高达+28VDC的电源故障的影响。可广泛应用于智能手机、移动互联网设备、平板电脑、外围设备等应用领域。

新产品发布时间 : 2019-03-29

RW4xx系列/ RF4xx系列/ UT6xx系列小型移动设备用MOSFET

描述- ROHM新推小型移动设备用MOSFET，RW4xx系列/RF4xx系列/UT6xx系列，小型和大功率(2W) DFN2020-8封装产品阵容，实现小型化和大电流，支持各种小型移动设备！

型号- UT6JA3,UT6JA2,UT6MA2,UT6KC5,RF4C050AP,UT6MA3,RF4C100BC,RF4G060AT,RW4XX系列,RW4E075AJ,RW4C045BC,RF4E075AT,UT6KB5,UT6JB5,UT6XX,RW4XX,RF4XX,RF4XX系列,UT6K3,RW4E065GN,RF4L070BG,UT6J3,RW4E045AJ,UT6XX系列,RF4E100AJ,RF4G100BG,RF4L040AT,RF4E110BN,RW4E045AT

商品及供应商介绍 - ROHM - 10.2021 PDF 中文下载