【元件】 优恩半导体新推深回扫低残压、低电容ESD静电保护器件,是高速数据传输保护的终极选择
【重磅推出】全新深回扫低残压、低电容ESD静电保护器件,型号ESD05V02D-DLC、ESD3.3V02D-DLC!
采用先进的深回扫工艺,瞬间钳位电压极速下降,稳定低残压输出!相比传统ESD保护器件,保护效果更强,抵抗更高强度的静电冲击,全面守护后端IC及电路安全。
广泛适用于USB 3.0/3.1、HDMI 2.0/2.1、Serial ATA、高清数字接口等高速传输接口!是高速数据传输保护的终极选择,性能无敌、护航安全!
快来抢先体验,为你的高速设备提供最强防护!
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本文由Lluvia转载自优恩半导体(unsemi微博),原文标题为:【重磅推出】全新深回扫低残压、低电容ESD静电保护器件,型号ES-20240926172821,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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优恩半导体TVS瞬态电压抑制二极管选型表
优恩半导体提供以下技术参数的TVS选型:反向截止电压:3.3V~440V;击穿电压(min):5.2V~492V;击穿电压(max):6V~543V;测试电流:1mA、5mA、10mA;最大钳位电压 VC @IPP (V):8V~713V;最大峰值脉冲电流IPP (A):0.56A~3000A;最大反向漏电流IR @VRWM (μA):1uA~1000μA;关断电压:10V~85V;最大反向浪涌电流IPP(A):48A~388A;最大IR @VRWMTJ=175(uA):150uA、250uA。
产品型号
|
品类
|
Reverse Stand-Off Voltage VRWM(V)
|
Breakdown Voltage VBR (V) @IT MIN
|
Breakdown Voltage VBR (V) @IT MAX
|
Test Current IT (mA)
|
Maximum Clamping Voltage VC @IPP (V)
|
Maximum Peak Pulse Current IPP (A)
|
Maximum Reverse Leakage IR @VRWM (μA)
|
model
|
8KP24A
|
Axial Lead Transient Voltage Suppressors
|
24
|
26.7
|
29.5
|
1
|
38.9
|
206
|
5
|
Uni
|
选型表 - 优恩半导体 立即选型
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优恩半导体在本文将对CAN总线浪涌保护之自恢复保险丝选型进行详细的讲解,为工程师们的设计提供理论基础。
【元件】优恩半导体带浪涌保护的RJ45连接器:网络变压器+多重保护,提高网络设备稳定性和可靠性
优恩半导体推出的带浪涌保护的RJ45连接器,内置网络变压器,可提供多重保护,提高网络设备稳定性和可靠性。本文优恩半导体介绍了其特点,及选购建议。
优恩半导体PPTC自恢复保险丝选型表
优恩半导体提供如下技术参数的PPTC自恢复保险丝选型:保持电流0.01A~14A;动作电流:0.03A~23.8A;最大电流:1A~100A,最大额定电压:6V~72V。产品符合rohs标准,小封装为电路板节省了电路板空间。
产品型号
|
品类
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Hold Current I hold (A)
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Trip Current I trip (A)
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Rated Voltage (V) max Vdc
|
Max Current I max(A)
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Typical Power P dtyp.(W)
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Maximum Time To Trip Current (A)
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Maximum Time To Trip Time (Sec.)
|
Resistance R min(mΩ)
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Resistance R max(mΩ)
|
SMD0603-001
|
Surface Mount Resettable Polymer PTCs
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0.01
|
0.03
|
60
|
20
|
0.50
|
0.20
|
1.00
|
15.00
|
100.0
|
选型表 - 优恩半导体 立即选型
优恩半导体高压双向触发二极管选型表
双向触发二极管俗称触发管,SIDAC 是基于闸流体原理和结构的一种两端具有负阻特性的材料。采用玻璃钝化工艺,耐高温特性好,可靠性高,同时具有响应速度快(ns 级);其广泛应用于空调、冰箱电子杀菌除臭、高压灯 ( 汞灯,钠灯等 ) 触发、日光灯启动、燃气灶具点火、热水器点火
产品型号
|
品类
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V DRM @ I DRM (V)Min
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V DRM @ I DRM (uA)Max
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V BO(V)Min
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V BO(V)Max
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I BO(uA)Max
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V T @ I T =1A(V)Max
|
RS (kΩ)Min
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I H(mA)Min
|
Body Marking
|
K1200SB
|
Silicon bilateral voltage triggered switch
|
100
|
1
|
110
|
125
|
50
|
2
|
0.1
|
10
|
K12S
|
选型表 - 优恩半导体 立即选型
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整体外形尺寸小至0.6*0.3*0.3mm (DFN0603),工作电压范围覆盖2.5V~36V,电容值低至0.2pF,浪涌能力最高可达240安培,静电等级可达空气放电、接触放电±30KV。提供免费浪涌测试仪、静电测试仪测试。
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测试等级:空气放电30KV±5%;接触放电30KV±5%,适用标准:GB/T 17626.2、IEC61000-4-2、ISO10605、GB/T 19951;给用户产品出电路保护设计方案建议及整改。点击预约,支持到场/视频直播测试,资深专家全程指导。
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