How is the Performance of SLKOR Silicon Carbide MOSFET?
The silicon carbide MOS tube of SLKOR has multiple performance advantages, as follows:
In terms of electrical performance:
High voltage resistance: The silicon carbide MOS
tube of Slkor has excellent voltage resistance performance and can
withstand relatively high voltages. This makes it reliable in
high-voltage application scenarios and can meet the needs of new energy
vehicles, high-end equipment, communication and power equipment, etc.
for high-voltage resistant devices. For example, the voltage resistance
value of some products can reach 1200V or more. This is crucial for
circuits handling high-voltage signals and can ensure the stable
operation of the circuit in a high-voltage environment and reduce device
damage or failures caused by excessive voltage.
Low on-resistance: This brand's silicon carbide MOS
tube has a low on-resistance. The lower the on-resistance, the less
energy loss there is when the device is conducting. This not only
improves energy utilization efficiency but also reduces heat generation.
The lower on-resistance makes the silicon carbide MOS tube of Slkor
generate less heat when the same current passes through, helping to
reduce heat dissipation requirements and reducing the volume and cost of
heat dissipation devices. It is of great significance for application
scenarios with high heat dissipation requirements or limited space.
In terms of switching characteristics:
Fast switching: The silicon carbide MOS tube of
Slkor has a fast switching speed. A fast switching speed means that the
device can complete the conduction and shutdown operations in a short
time, which is very beneficial for high-frequency application scenarios.
For example, in power conversion, motor control and other fields, a
fast switching speed can improve the working efficiency and performance
of the system and reduce energy loss during the switching process.
Low switching loss: Due to the characteristics of
silicon carbide materials and the technical advantages of Slkor, its
silicon carbide MOS tube has a low switching loss during the switching
process. Compared with traditional silicon-based MOS tubes, the silicon
carbide MOS tube of Slkor does not generate a large tail current during
switching, thereby reducing switching loss. This enables the device to
maintain high efficiency in high-frequency switching applications and is
conducive to reducing the overall energy consumption of the system.
In terms of thermal performance:
High temperature resistance: The silicon carbide
material itself has a high thermal conductivity and high temperature
resistance performance. The silicon carbide MOS tube of Slkor can work
stably in a high temperature environment. In some high-temperature
application scenarios, such as solar photovoltaic and automotive
electronics, the environment temperature where the device is located is
relatively high. The silicon carbide MOS tube of Slkor can withstand the
test of high temperatures and maintain good performance and reliability
without performance degradation or failure due to temperature rise.
Good heat dissipation: Another benefit of low
on-resistance and low switching loss is less heat generation. Coupled
with the high thermal conductivity of silicon carbide materials, the
silicon carbide MOS tube of Slkor has good heat dissipation performance.
This helps to quickly dissipate the heat generated by the device during
operation, further improving the reliability and stability of the
device and prolonging the service life of the device.
In terms of reliability:
High stability: Through strict quality control and
advanced production processes, the silicon carbide MOS tube of Slkor has
high stability. During long-term use, it can maintain stable
performance and is not easily affected by external environmental factors
such as temperature, humidity, and vibration. This is a very important
performance indicator for application scenarios that require high
reliability, such as industrial control, aerospace and other fields.
Strong anti-interference ability: This brand's silicon carbide MOS tube has strong anti-interference ability and can work normally in a complex electromagnetic environment. This makes the device less susceptible to external electromagnetic interference in practical applications and ensures the stable operation of the system.
In general, the silicon carbide MOS tube of Slkor has excellent
performance in electrical performance, switching characteristics,
thermal performance and reliability.
Its performance can be
comparable to some well-known international brands. It is a power device
with high cost performance and has broad application prospects in new
energy vehicles, high-end equipment, communication and power and other
fields.
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本文由莫子若转载自SLKOR Official Website，原文标题为:Q128. How is the performance of SLKOR Silicon Carbide MOSFET?，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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
SLKOR-霍尔传感器选型表
SLKOR提供如下参数的霍尔传感器选型,VDD(V):1.6~5.5,IDD(A):1.6及3.3,FO(Hz):5和20及多种封装形式,如SOT-23,TO-92S和SOT-523不等
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产品型号
|
品类
|
Polarity
|
VDD(V)
|
IDD(A)
|
TA(℃)
|
BOP(Gs)
|
BRP(Gs)
|
FO(Hz)
|
Output Type
|
Package
|
|
SL1603TH
|
霍尔传感器
|
全极
|
1.6~5.5
|
3.3
|
-40～85
|
±46
|
±34
|
20
|
CMOS
|
SOT-23
|
选型表 - SLKOR 立即选型
SLKOR-可控硅选型表
SLKOR提供如下参数的可控硅选型,Vᴅʀᴍ(V):400~1600,Iᴛ₍ʀᴍs)(A):0.8~80,Vɢᴛ(V):0.7~1.5及多种不同的封装选择,如TO-220,TO-3P和ITO-247不等
|
产品型号
|
品类
|
Vᴅʀᴍ(V)
|
Iᴛ₍ʀᴍs)(A)
|
Iɢᴛ(μA)
|
Vɢᴛ(V)
|
Tᴊ(℃)
|
Package
|
|
MCR100-6
|
单向可控硅
|
400
|
0.8
|
≤200
|
0.7~0.8
|
125
|
TO-92/SOT-23
|
选型表 - SLKOR 立即选型
Key Points in Designing Aluminum Profiles Used in New Energy Vehicles and Energy Storage Battery Packs
The battery pack is a key component of new energy vehicles, energy storage cabinets and containers. It is an energy source through the shell envelope, providing power for electric vehicles and providing consumption capacity for energy storage cabinets and containers. In combination with actual engineering needs, this article summarizes the key points of profile design for battery packs by analyzing the requirements of mechanical strength, safety, thermal management and lightweight of battery packs.
SLKOR三极管选型表
SLKOR提供如下参数的三极管选型,Iᴄ(A):-3~5;Vᴄʙᴏ(V):-500~700,Vᴄᴇᴏ(V):-400~450及多种不同的封装尺寸,如:SOT-23,SOT-363和SOT-89不等
|
产品型号
|
品类
|
Polarity
|
Iᴄ(A)
|
Vᴄʙᴏ(V)
|
Vᴄᴇᴏ(V)
|
Vᴇʙᴏ(V)
|
Vᴄᴇ(sat)(V)
|
Package
|
|
S8050
|
三极管
|
NPN
|
0.5
|
40
|
25
|
5
|
0.6
|
SOT-23/TO-92
|
选型表 - SLKOR 立即选型
【应用】SLKOR与国产MCU合作推出直流变频热水循环泵方案，多种运行模式支持500ms快速启动
采用SLKOR的MCU GD32E230C8T6设计的直流变频热水循环泵控制器系列方案，采用GD32E230C8T6芯片作为主控。提供110V和220V两种电源模式，采用正弦波矢量控制算法，具有启动快速平稳，少斩波高载频、噪音低、温升低、功率控制稳定的特点。
SLKOR MOSFET选型表
SLKOR提供以下参数的MOSFET选型,Vᴅss(V):-60~650,Vɢs(V):±8~±30,Iᴅ@Tᴄ=25℃(A):-70~100及多种不同的封装方式,如:SOT-23,SOP-8和TO-252-3不等
|
产品型号
|
品类
|
N/P
|
Vᴅss(V)
|
Iᴅ@Tᴄ=25℃(A)
|
Pᴅ@Tᴄ=25℃(W)
|
Vɢs(V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=4.5V)
|
Rᴅs(on)(mΩ)Max.@Tᴄ=25℃(at Vɢs=2.5V)
|
Package
|
|
SL2333A
|
MOSFET
|
P
|
-12
|
-6
|
1.2
|
±8
|
40
|
50
|
SOT-23
|
选型表 - SLKOR 立即选型
电子商城
服务
可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
实验室地址： 西安 提交需求>
定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
最小起订量： 1片 提交需求>
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