Alliance Memory Introduces Six New CMOS DDR4 SDRAMs that Combine Low 1.2V Power Consumption with Fast Clock Speeds of 1600MHz and Transfer Rates of 3200 MT/s
ALLIANCE Memory announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with six new 8Gb, 16Gb, and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. Providing the company’s customers with higher-density options for a wide range of applications, the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are built on a new process technology to deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost.
To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAMs released today feature a low operating voltage of +1.2V (±0.06V). The devices are designed, qualified, and recommended for use in 5G and IoT designs; computing applications; surveillance, gaming, and networking storage systems; smart meters; human-machine interfaces (HMI), digital signal controllers, and PNDs; and more. Built on an 8n-prefetch architecture, the devices offer fast clock speeds of 1600MHz and transfer rates of 3200 MT/s.
The AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN support sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0℃ to +95℃) temperature range, the devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets.
Device Specification Table:
Samples and production quantities of the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are available now, with lead times of four weeks.
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本文由玄子转载自ALLIANCE Official Website，原文标题为:Alliance Memory Introduces Six New 8Gb, 16Gb, and 32Gb CMOS DDR4 SDRAMs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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型号- AS4C1G8D4-75BCNTR,AS4C512M16D4A-62BXN,AS4C1G8D4A-62BXN,AS4C512M16D4A-62BINTR,AS4C512M16D4A-62BCNTR,AS4C512M16D4-75BINTR,AS4C1G8D4-75BCN,AS4C1G8D4A-62BCNTR,AS4C1G8D4A-62BCN,AS4C512M16D4-75BIN,AS4C1G8D4-75BXN,AS4C512M16D4-75BCN,AS4C512M16D4-75BCNTR,AS4C512M16D4A-62BIN,AS4C1G8D4A-62BIN,AS4C1G8D4A-62BINTR,AS4C1G8D4-75BINTR,AS4C512M16D4-75BXN,AS4C1G8D4-75BIN,AS4C512M16D4A-62BCN
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产品目录2024
描述- 本资料为Alliance Memory公司2024年产品目录，主要介绍了该公司在DRAM、SRAM、FLASH和eMMC等领域的最新产品。目录详细列出了各种同步DRAM、DDR1、DDR2、DDR3、DDR4、LPDDR4、LPDDR4X、异步SRAM、NOR Flash、NAND Flash和eMMC等产品的规格参数，包括容量、组织、电压、封装、频率、速率和温度选项等。此外，还提供了部分产品的交叉参考信息。
型号- AS4C8M16SA-7TXN,AS6C2008A,AS6C62256-55SXN,AS4C2M32S-7BXN,AS4C64M4SA-6TIN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C16M16SA-6TXN,AS4C256M16D3LC,AS4C16M32MSB,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C16M32MSA,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,AS7C31025B-12TJIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS4C32M8D1-5TXN,AS9F31G08SA-25BIN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS1C1M16P-70BIN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS4C64M4SA-7TCN,AS25F3512MQ-7S2INTR,AS4C32M8SA-7TCN,AS6C2008A-55TIN,AS4C16M16SA-6BXN,AS4C512M16D3LC-12BXN,AS7C1026B-XXTIN,AS7C325632-10BIN,AS6C2016-55ZIN,AS4C16M16SA-7TXN,AS1C1M16PL-70BIN,AS4C128M16D3C-93BXN,N25Q064A13EF8H0E,AS6C4016B-45BIN,AS4C512M16D3LB,AS4C512M16D3LC,AS4C512M16D3LA,AS4C512M8D4A-75BXN,AS4C4M16D1A,AS4C512M16D4A-62BXN,AS4C4M32MSA,AS4C1G32MD4V-046BIN,AS7C34096B-10BIN,AS4C256M8D2,AS4C4M16SA-7TXN,AS6C1008-55PCN,AS7C164A-15PXN,AS1C8M16PL-70BIN,AS6C1008-55SIN,AS4C64M16D1,AS4C256M16MD4V-062BAN,N25Q032A13ESCA0F,AS7C34098B,ASFC4G31M-51BIN,AS4C4M16SA-6BXN,AS7C34098A,N25Q064A13EF640E,AS7C38098A-10BIN,AS7C3256A-XXTIN,AS4C32M16D3-12BXN,M45PE80-VMP6G,AS4C8M16SA-6TXN,AS4C32M16D3L-12BXN,AS7C1026B-XXTCN,ASFC10G31P3-51BIN,AS4C64M16D2B-25BCN,AS4C128M32MD2A-25BIN,AS7C4098A-XXJXN,AS4C512M16MD4V-053BIN,AS7C256A-XXTIN,AS4C1G8D3LA-10BXN,AS4C8M32S-6TXN,AS4C32M16SB-7TCN,AS4C128M16MD2A-25BIN,AS7C4096A-XXTXN,AS4C16M16MSA-6BIN,AS6C8016B,AS6C1008-55TIN,AS7C38098A-10TIN,AS4C64M16MD1A-5BIN,A7C351232-10BIN,AS6C8016,AS7C34096A,AS9F14G08SA-45BIN,AS4C2M32S-6BXN,AS7C34096B,AS7C34096B-10TIN,AS6C1616B-45BIN,MT40A512M16TD-062E:R,ASFC5G31P3-51BIN,AS4C32M16MD1A,AS6C1616-55TIN,AS7C316098A,AS7C316098B,AS4C16M16MD1-6BCN,AS4C256M32MD4-062BAN,AS6C1016-55BIN,AS25F3128MQ-7SIN,AS29CF040-55CCIN,AS6C4008-55SIN,AS4C512M8D3LC-12BXN,AS6C4008-55PCN,AS4C64M16D3LB,AS6C1616B-55BIN,AS7C316096B-10TIN,AS4C8M32MSB,AS4C128M8D3B-12BXN,AS4C8M32MSA,AS4C4M16SA-7B2CN,AS5F31G04SND-08LIN,ASFC16G31M-51BIN,AS4C8M16SA-6TAN,AS4C32M16D1A-5TXN,AS4C128M16MD4V-062BAN,AS6C4008-70SAN,AS6C8008B-45BIN,AS4C32M16SB-7TXN,AS7C31024B-XXTJCN,AS4C8M32MD2A-25BCN,AS4C64M16MD1A,AS7C32098A-XXTXN,AS25F304MD-10S1IN,AS7C3256A,AS25F1128MQ-70SIN,AS6C8016B-55ZIN,AS6C1608B-45BIN,M45PE16-VMW6TG,AS6C1016,AS6C4008-55BIN,AS7C351232,AS4C32M32MD1A,AS7C316096A-10TIN,AS4C8M16MSB-6BIN,M45PE20-VMN6P,AS6C4008-55TIN,AS4C256M16D3C-93BCN,AS4C16M32SB-6BXN,AS7C38096A-10TIN,AS4C8M16SA-6TCN,AS4C64M16D1-6TXN,AS6CE4016B-45BIN,AS6C2016,AS6C1616B-45TIN,AS7C256B-XXPIN,AS4C16M16MSB,AS7C1024B-XXJIN,AS7C34098A-XXTXN,AS7C1025B-XXJCN,AS4C8M16SA-6BAN,AS4C256M16MD4-062BAN,AS4C16M16SB-6TXN,AS6C62256-55STXN,AS25F3128MQ-6SIN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C512M16D4B-62BCN,AS4C256M16D4A-62BXN,AS4C256M16D3C,AS6C8008-55ZIN,AS6C2008,AS6C4008-55STIN,AS4C32M16D1A,AS6C2008-55TIN,AS4C16M16MSB-6BIN,AS4C16M16MSA,AS4C4M32S,AS4C64M8D2,M29F800FB5AN6F2,AS4C64M8D1,AS7C316096B-10BIN,AS4C8M16SA-7BXN,AS7C31026B-XXJCN,AS7C31025B-XXJCN,AS4C32M8SA-6TXN,AS4C32M16D2A,AS7C32098A,AS4C32M16D2C,AS4C64M32MD1-5BXN,AS4C8M16D1A,AS7C38096A-10BIN,AS4C1G16D4-062BCN,AS4C1G8D4A-62BXN,AS6C1616B-55TIN,AS4C64M32MD1,AS7C256C-XXPCN,AS6C2008-55STIN,AS4C4M32S-7BXN,AS4C4M32D1A-5BXN,AS4C128M16D2-25BXN,AS6C8016B-45ZIN,AS4C16M16SB-7BXN,AS4C8M32SA,AS4C4M32SA-6TXN,AS25F316MQ-10S1IN,AS7C32096A,AS6C1008-55PIN,AS4C16M16SB-7TXN,M45PE80-VMP6TG,AS4C4M32S-6BXN,AS4C16M16SA-6BIN,AS4C4M16SA-5TXN,M29F400FT5AN6E2,AS4C32M16MD1A-5BCN,AS4C64M16D1A-6BIN,AS7C1026B,AS6C1008,AS7C513B,AS4C16M16SB-6BXN,AS4C8M16D1,M29F800FB5AN6E2,AS6C6416-55BIN,AS4C512M32MD4V-046BIN,AS7C31025B-XXTJCN,AS9F14G08SA-45BAN,AS25F3512MQ-7W2INTR,AS5F14G04SND-10LIN,AS6C3216A,AS7C1025B,AS9F34G08SA-25BIN,AS7C316096C-10TIN,N25Q032A13ESFA0F,AS4C32M8SA-7TXN,AS4C32M16SC-7TIN,AS4C16M32SC-7TIN,AS4C32M16D3-10BCN,AS25F3256MQ-7W2INTR,AS4C2M32SA-6TXN,AS6C6264-55SCN,AS4C32M16D1-5BXN,AS4C8M16SA-7BCN,AS4C8M32SA-7BXN,AS4C8M16SA-6TIN,AS7C1024B,AS7C34098B-10TIN,AS4C32M16D2C-25BXN,AS4C16M16D1-5BXN,AS7C31026B-XXTCN,AS4C4M32SA-7TXN,AS6C4016,AS4C1M16S,AS7C3256A-XXJIN,AS9F18G08SA-45BAN,AS9F32G08SA-25BIN,AS7C256A-XXJIN,AS7C1026B-XXJCN,AS4C4M16SA-7TCN,AS4C1M16S-7TXN,AS4C32M32MD1A-5BIN,AS7C38096B,AS4C128M16D3C,AS4C64M4SA-7TXN,AS4C1G16D4A-62BCN,N25Q064A13EF8A0E,N25Q064A13EF8A0F,AS6C4008,AS4C64M8SC-7TIN,AS7C38096A,AS4C16M32MD1,AS4C16M16SA-6TIN,AS4C8M16D1A-5TXN,AS4C256M8D2A-25BCN,AS7C4098A-XXTXN,AS5F32G04SNDA-08LIN,AS5F34G04SNDA-08LIN,AS6C1616B,AS4C16M32MD1-5BXN,AS4C1M16S-6TXN,AS4C512M16D3LA-10BXN,AS4C64M4SA-6TXN,AS4C8M16MSA-6BIN,AS6C2016-55BIN,M29F400FB55N3E2,AS6C4016B-45ZIN,AS1C512K16PL-70BIN,AS4C8M16D1-5BXN,AS7C316096C-10BIN,AS4C8M16SA-6BIN,M29F400FB55N3F2,AS7C3513B-XXTCN,AS7C513B-XXTCN,AS25F3256MQ-7S2INTR,AS6C1008-55STIN,AS7CW2M16-10BIN,AS7C34098A-12JCNTR,AS4C512M8D3LC-10BAN,AS4C128M32MD2-18BIN,AS7C38098A,AS4C16M16SA-7BCN,AS4C4M16SA-6TIN,AS4C128M16D2,AS7C34
New 2Gb/4Gb/8Gb LPDDR4 SDRAMs with on-chip ECC Offer lower Power Consumption
Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package.
联盟产品目录
描述- 本资料为Alliance Memory公司2024年产品目录，主要展示其内存产品线，包括DRAM、SRAM、FLASH和eMMC等。产品涵盖多种类型和规格，如同步DRAM、DDR1、DDR2、DDR3、DDR4、LPDDR4、LPDDR4X、异步SRAM、NOR Flash、NAND Flash和eMMC等。目录详细介绍了各产品的特性、封装、工作电压、频率、容量和温度范围等信息，并提供交叉参考表以方便用户选择合适的产品。
型号- AS6C2008A,AS6C62256-55SXN,AS4C64M4SA-6TIN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C256M16D3LC,AS4C16M32MSB,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C16M32MSA,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS9F38G08SA-25BIN,AS7C31025B-12TJIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS9F31G08SA-25BIN,AS4C32M8D1-5TXN,AS4C64M4SA-6 TXN,AS4C512M16D3LC-12BXN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS4C8M16SA-6 TXN,AS1C1M16P-70BIN,AS4C8M16SA-7 BXN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C4M16SA-6TXN,AS4C128M8D2A-25BXN,AS4C64M4SA-7TCN,AS25F3512MQ-7S2INTR,AS4C32M8SA-7TCN,AS6C2008A-55TIN,AS4C2M32SA-7 TXN,AS7C1026B-XXTIN,AS7C325632-10BIN,AS6C2016-55ZIN,AS1C1M16PL-70BIN,AS4C128M16D3C-93BXN,N25Q064A13EF8H0E,AS6C4016B-45BIN,AS4C512M16D3LB,AS4C512M16D3LC,AS4C512M16D3LA,AS4C512M8D4A-75BXN,AS4C4M16D1A,AS4C512M16D4A-62BXN,AS4C4M32MSA,AS4C1G32MD4V-046BIN,AS7C34096B-10BIN,AS4C256M8D2,AS6C1008-55PCN,AS7C164A-15PXN,AS1C8M16PL-70BIN,AS6C1008-55SIN,AS4C64M16D1,AS4C256M16MD4V-062BAN,N25Q032A13ESCA0F,AS7C34098B,AS7C34096A-XXJXXN,ASFC4G31M-51BIN,AS5F32G04SNDB-08LIN,AS7C34098A,N25Q064A13EF640E,AS7C38098A-10BIN,AS7C3256A-XXTIN,AS4C32M16D3-12BXN,M45PE80-VMP6G,AS4C32M16D3L-12BXN,AS7C1026B-XXTCN,AS4C4M16SA-7TXN,ASFC10G31P3-51BIN,AS4C64M16D2B-25BCN,AS4C128M32MD2A-25BIN,AS7C4098A-XXJXN,AS4C512M16MD4V-053BIN,AS7C256A-XXTIN,AS4C1G8D3LA-10BXN,AS4C32M16SB-7TCN,AS4C256M16D3C-93BXN,AS4C128M16MD2A-25BIN,AS7C4096A-XXTXN,AS4C64M4SA-7 TXN,AS4C32M16SB-7 TXN,AS4C512M8D4-83BXN,AS4C16M16MSA-6BIN,AS6C8016B,AS6C1008-55TIN,AS4C4M32SA-6 TXN,AS7C38098A-10TIN,AS7C34098A-XXTXXN,AS4C64M16MD1A-5BIN,A7C351232-10BIN,AS6C8016,AS7C34096A,AS9F14G08SA-45BIN,AS7C34096B,AS7C34096B-10TIN,AS6C1616B-45BIN,AS1C8M16PL-70BIN***,ASFC5G31P3-51BIN,AS4C2M32SA-6 TXN,AS4C16M16SA-7 TXN,AS4C32M16MD1A,AS4C4M16SA-7 TXN,AS6C1616-55TIN,AS7C316098A,AS7C316098B,AS4C16M16MD1-6BCN,AS4C256M32MD4-062BAN,AS6C1016-55BIN,AS25F3128MQ-7SIN,AS29CF040-55CCIN,AS6C4008-55SIN,AS4C512M8D3LC-12BXN,AS6C8016-55ZIN,AS6C4008-55PCN,AS4C64M16D3LB,AS6C1616B-55BIN,AS4C8M32SA-6 BXN,AS7C316096B-10TIN,AS4C8M32MSB,AS4C128M8D3B-12BXN,AS4C8M32MSA,AS4C4M16SA-7B2CN,AS5F31G04SND-08LIN,ASFC16G31M-51BIN,AS4C8M16SA-6TAN,AS4C32M16D1A-5TXN,AS4C128M16MD4V-062BAN,AS6C4008-70SAN,AS6C8008B-45BIN,AS7C31024B-XXTJCN,AS4C8M32MD2A-25BCN,AS4C64M16MD1A,AS7C32098A-XXTXN,AS25F304MD-10S1IN,AS7C3256A,AS25F1128MQ-70SIN,AS6C8016B-55ZIN,AS6C1608B-45BIN,M45PE16-VMW6TG,AS6C1016,AS6C4008-55BIN,AS7C351232,AS4C32M32MD1A,AS7C316096A-10TIN,AS4C8M16MSB-6BIN,M45PE20-VMN6P,AS6C4008-55TIN,AS4C256M16D3C-93BCN,AS4C16M32SB-6BXN,AS7C38096A-10TIN,AS4C32M16SB-6 TXN,AS4C8M16SA-6TCN,AS4C64M16D1-6TXN,AS6CE4016B-45BIN,AS6C2016,AS6C1616B-45TIN,AS7C256B-XXPIN,AS4C16M16MSB,AS7C1024B-XXJIN,AS7C34098A-XXTXN,AS7C1025B-XXJCN,AS4C8M16SA-6BAN,AS4C256M16MD4-062BAN,AS6C62256-55STXN,AS25F3128MQ-6SIN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C512M16D4B-62BCN,AS4C2M32SA-6/7TXN,AS4C256M16D4A-62BXN,AS4C256M16D3C,AS6C8008-55ZIN,AS6C2008,AS4C32M16D1A,AS6C4008-55STIN,AS6C2008-55TIN,AS4C16M16MSB-6BIN,AS4C16M16MSA,AS4C4M32S,AS4C64M8D2,M29F800FB5AN6F2,AS4C16M16SB-6 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Alliance Memory Highlighted Latest SRAM, DRAM, eMMC, and Flash Memory ICs at Electronica 2022
Alliance Memory announced its technology lineup for electronica 2022, in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company highlighted its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets.
Alliance Expands Lineup of CMOS DDR4 SDRAMs With New 16Gb Device,Low 1.2V Power Consumption With Fast Clock Speeds to 1600MHz
To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAM released today features a low operating voltage of +1.2V (±0.06V). The AS4C1G16D4-062BCN is designed, qualified, and recommended for use in 5G designs, computing applications, and so on.
AS4C2G16D4 32GB（2G X 16）DDR4 SDRAM
描述- 本资料介绍了AS4C2G16D4 32Gb DDR4 SDRAM芯片的规格、特性、应用和注意事项。该芯片采用双晶圆设计，具有高速数据传输能力，适用于商业温度范围（0°C至95°C）。资料详细说明了其电气规格、封装尺寸、工作温度和热阻抗等。
型号- AS4C2G16D4-62BCNXX,AS4C2G16D4,AS4C2G16D4-62BCN
【产品】Alliance推出4Gb高速CMOS DDR4 SDRAMs：AS4C256M16D4、AS4C512M8D4
Alliance Memory扩大了其产品范围，推出了高速CMOS DDR4 SDRAMs。4Gb AS4C256M16D4和AS4C512M8D4具有更低的功耗和更快的数据传输速率，有96焊球和78焊球FBGA封装。
Alliance Memory New 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds to 1.86GHz, Offering 50% Reduction in Power Consumption
Alliance Memory announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with four new LPDDR4X devices in a variety of densities. The 2Gb, 4Gb, 8Gb, and 16Gb LPDDR4X SDRAMs combine low-voltage operation of 0.6V with fast clock speeds to 1.86GHz.
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可定制风扇尺寸范围：30mm~120mm；转速：2000~30000RPM；噪音≥17dB。最大风量范围：3.28~262.39CFM；最大风压范围：1.25~110.83mmH2O；
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