EPC23102 ePower™ Stage GaN IC Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones
EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower™ Stage GaN IC with embedded gate driver function and two GaN FETs with 5.2mΩ typical RDS(on). The EPC9176 operates from an input supply voltage between 20V and 80V and can deliver up to 28 Apk (20 ARMS). This voltage range and power level make the solution ideal for a variety of 3-Phase BLDC motor drive applications with 36V – 80V input including eBikes, eScooters, power tools, drones, robots, DC servo, medical robots, and factory automation.
The use of the EPC23102 integrated GaN-on-silicon device offers higher performance in a smaller footprint with significantly reduced design effort requirements for fast time to market. The EPC23102 is a fully integrated power stage with a 100V rating including the half-bridge FETs, driver, level shifter, and synchronous bootstrap charging, with an enable pin for low quiescent current in disabled mode and 5V bias.
The EPC9176 mates with an assortment of compatible controllers, supported by various manufacturers leveraging existing resources for quick development purposes that reduce design cycle times. EPC offers interface boards (EPC9147X) to operate this inverter reference design with the most common motors. The EPC9176 contains all the necessary critical functions circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions.
"Designers can use GaN ICs to make lighter weight and more efficient battery-operated motor drives for a wide variety of emobility and robotic applications", said Alex Lidow, CEO of EPC. "GaN enables motor systems that are smaller, lighter, less noisy, have more torque, more range, and greater precision while improving EMI, reducing EMI filtering and capacitor count, and eliminating electrolytic capacitors and input filter inductors."
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本文由Vicky转载自EPC News，原文标题为:GaN ICs Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型：配置：Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101，VDS最大值（V）：15~350V；VGS最大值（V）：5.75~7V
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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ID(A)
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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选型表 - EPC 立即选型
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EPC - GAN FETS,氮化镓晶体管,氮化镓场效应晶体管,EPC2302,EPC2305,EPC2308,EPC23101,EPC23102,DCDC,模块电源
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