Littelfuse Unveils High-Performance Ultra Junction X4-Class 200V Power MOSFETs for Enhanced Efficiency and Reliability

Delivers industry-leading low on-state resistance, enabling simplified design and enhanced performance in battery energy storage and power supply applications

LITTELFUSE, Inc. (NASDAQ: LFUS), an industrial technology manufacturing company empowering a sustainable, connected, and safer world, is proud to announce the release of the IXTN400N20X4 and IXTN500N20X4 Ultra Junction X4-Class Power MOSFETs.

The new devices expand upon the current 200V X4-Class Ultra Junction MOSFETs, featuring some of the lowest on-state resistances available. The high current ratings of these MOSFETs allow designers to replace multiple low-current rated devices connected in parallel, streamlining the design process and enhancing both reliability and power density in applications. Additionally, the screw-mounted terminals of the SOT-227B package enable rugged and stable mounting.

These new 200V MOSFETs deliver the lowest on-state resistances, enhancing and complementing the existing Littelfuse X4-Class Ultra Junction family portfolio. Compared to the existing state-of-the-art X4-Class MOSFET solutions, these MOSFETs offer up to ~2x higher current ratings and R_DS(on) values up to ~63% lower.

The new MOSFETs are ideal for a range of low-voltage power applications where minimizing on-state losses is essential, including:

• Battery Energy Storage Systems (BESS),

• Battery chargers,

• Battery formation,

• DC/battery load switch, and

• Power supplies.

"The new devices will allow designers to replace multiple low-current rated devices, connected in parallel, with a single device solution," said Sachin Shridhar Paradkar, Global Product Marketing Engineer at Littelfuse. "This unique solution simplifies gate driver design, improves reliability, improves power density and PCB space utilization."

The Ultra Junction X4-Class Power MOSFET offers the following key performance benefits:

• Low conduction losses

• Minimized parallel connection effort

• Simplified driver design with minimal driver losses

• Simplified thermal design

• Increased power density

Why is a MOSFET featuring a low on-state resistance the go-to choice for applications where minimal on-state losses are crucial?

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with low on-state resistance (R_DS(on)) is the ideal choice in applications where minimal on-state losses are crucial. It significantly reduces the power dissipation during operation, leading to lower conduction losses, higher efficiency, and less heat generation. This makes it perfect for power-sensitive applications such as power supplies, motor drivers, and battery-operated devices where maintaining high efficiency and thermal management is crucial.

Performance Specifications

Availability

The Ultra Junction X4-Class Power MOSFETs are available 10 pieces per tube.