A Discussion of the Functions of RF Switches, the Devices Used and the Performance Indicators Needed when Selecting RF Switches
RF switches (radio-frequency switches) are used to switch the signal path of RF signals (radio-frequency signals); RF signals cannot communicate properly unless they are switched to the appropriate signal path configured for each communication standard and frequency band.
For example, smartphones can handle RF signals of various communication standards such as 5G, WiFi, and Bluetooth, and have multiple paths for filtering and amplification corresponding to each communication standard and frequency band. Furthermore, the transmit and receive paths may be different, requiring RF switches with many switching paths and multiple RF switches to switch RF signals transmitted and received via a limited number of antennas.
The figure below is a simplified version of the blocks that handle RF signals.
The RF switch shown in the figure is required to pass the RF signal from the antenna through the filter to the Low Noise Amplifier (LNA) side in receive mode, and to block the RF signal to the Power Amplifier (PA) side so as not to leak.
Then, in transmit mode, the RF signal sent from the transmitter is amplified by the PA, transmitted through the RF switch and filter to the antenna, and radiated from the antenna into the air.
Since the output power from the PA is greater than the RF signal power input to the RF switch in the receive mode, the RF switch must have characteristics that prevent RF signal leakage to the receive side in the transmit mode.
RF Switch Configuration
The configuration of RF switches is expressed by the number of input and output pins. The simplest one-input, one-output configuration is called Single-Pole Single-Throw (SPST), while the one-input, two-output configuration for switching between two paths is called Single-Pole Double-Throw (SPDT).
We offer a wide range of products from SPDT to SP6T and Double-Pole Double-Throw (DPDT), which switches between two inputs and two outputs.
RF switches that pass RF signals are required to have the performance of how well they can pass signals as they are without degradation. Specifically, power insertion loss, isolation which represents power leakage from the pass-through path, harmonic distortion and intermodulation distortion which represent signal distortion, and switching speed are the main RF characteristic items used to describe the capability of RF switches.
Configuration Examples of RF Switches
What makes RF switches different from other switch ICs?
There are various types of switch ICs with different functions and characteristics depending on the target application.
For example, our product lineup includes switch ICs that turn USB power lines on and off and control power distribution, analog switch ICs for switching analog signal paths, and audio switch ICs for switching audio signal paths.
So, for example, if we ask whether the aforementioned analog switch IC can switch the path of RF signals, the answer is it basically cannot. Probably, even if an RF signal is input to an analog switch IC that is not intended for RF signal use, little output power will be obtained. This is because the ON resistance, which is the resistance component of the path where the analog switch IC is ON, is too large for an RF switch.
First, transmission lines handling RF signals have a characteristic impedance of 50Ω (75Ω for video systems). Therefore, RF signals are transmitted and received with both the output impedance of the signal source and the load impedance of 50Ω.
If the ON resistance of the switch IC connected in series to this 50Ω transmission line is several hundred ohms, the voltage obtained at the load will be considerably reduced due to voltage division with the load resistance. If the Insertion Loss of the RF switch used in the 50Ω system is to be kept below 0.5dB, the ON resistance of the switch IC must be about 6Ω or less.
Calculation Example of Loss by On Resistance in 50Ω System
However, this value is based on considering only the resistance component; in reality, the effects of parasitic inductance and parasitic capacitance in the path through the switch must also be considered.
RF signals, which have high frequencies ranging from several hundred MHz to several GHz, are affected in their transmission by various physical elements that become parasitic inductances and capacitances.
Even the depletion layer capacitance that occurs between the channel, drain, and source of the FET (Field Effect Transistor) that realizes the switching function and the semiconductor substrate can cause a loss of RF signal transmission power.
Not only that, various capacitances such as parasitic capacitances in the drain-source wiring of the FET that functions as an RF switch and fringe capacitances due to spatial coupling can work as OFF capacitance of the RF switch and cause RF signal loss.
RF switches are ICs with low ON resistance while suppressing parasitic components that cause such power loss.
Parasitic Capacitance in Each Part of Silicon FET
RF Switch Devices
As mentioned above, RF switches require devices that can achieve low ON-resistance while suppressing parasitic components.
Originally, PIN diodes were used for RF signal switching, but with the advent of MESFETs, GaAs semiconductor RF switches took their place, and furthermore, with the advent of HEMTs*, even higher performance was realized.
（*HEMT: synonymous with HJFET, explained in the second volume.）
Then, why is it possible to achieve high performance RF switches by using HEMTs?
Electron Mobility
The first point to mention is that the electron mobility of HEMTs is very high.
The higher the carrier mobility, the lower the ON resistance of the FET. The electron mobility of HEMTs is much higher than that of silicon-based semiconductors, which means that HEMTs can achieve lower ON-resistance even with the same FET size. Since low ON-resistance can be achieved with a small FET size, the parasitic capacitance of the FET is also reduced, which further contributes to the suppression of transmission loss.
Semiconductor Resistivity
Next is the high resistivity of GaAs semiconductor substrates.
The resistivity of silicon-based substrates is generally between that of an insulator and a conductor, as they are called semiconductors. In reality, however, impurities are doped into the substrate, making the resistivity even lower than that of pure silicon.
In contrast, GaAs substrates have such high resistivity that they are called semi-insulators. When the substrate resistivity is high, the current flowing into the parasitic capacitance between the FET or wiring and the GaAs substrate is limited by the high resistance of the GaAs substrate, thus suppressing substrate losses.
These two main advantages are why HEMTs are used in high-performance RF switches.
However, silicon-based devices have also made great progress, and their performance as RF switches has dramatically improved due to shorter gate lengths and suppression of parasitic capacitance. In recent years, RF switches using silicon devices such as Silicon On Insulator (SOI) have become the mainstream, and we have also released SOI RF switches.
Performance Indicators of RF Switches
We have described the typical features of RF switches, and now we will briefly explain the specific RF performance indicators as described in the actual RF switch data sheets. (The names and descriptions of each index are based on our datasheets.)
The above is a discussion of the functions of RF switches, the devices used, and the performance indicators needed when selecting RF switches.
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本文由Vicky转载自NISSHINBO Official Website，原文标题为:RF Switch (Radio Frequency Switch) - Transmit RF signals as They Are -，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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型号- R1515,R1516,R1513,R1514,R1517,R1518,NJU7089,R3134,R1511,R1510,R1191,NJG1187KG1,R1190,NSNJ9205,R1526,R1524,R1525,NJU7077,NJU7870,NSNJ9208,NA1150,NJU72040,R8156,R8153,R8152,R8155,RN5T569,R8154,R8151,RP550,R8150,NJG1814MD7,NJG1175KG1,NJU77701,NJG1159PHH-A,RP108,R3154,R3152,NJW4760,R8160,NJG1801AKGC-A,NJG1182UX2,R3120XXXXE,NJU7890,NSNJ9200A,R3120XXXXA,NJG1186PJL-A,R1540,R5106,R5107,NJG1804K64,R5108,R5109,NJG1150UA2,R5104,R5105,R3160,NJG1815AK75-A,NJU72015,NT1191GEAE3A,NL6012,R8315XXXXA,NV3601,R8315XXXXB,R8315XXXXE,R8315XXXXF,NV3600,R1276,NJG1681MD7,NJG1669MD7,NJG1155UX2,R1278,NJW4107,NJW4106,NJW1871,NR1640,NJW4105,NJW4104,R1272,NJM2369,R1273,R8300XXXXA,R1270,ND1433,R1271,R1150,MUSES8920A,R8300XXXXE,R8300XXXXG,NJM41001,NJM41005,R5524,R8359,R8358,NJG1684ME2,R5523,R8355,NJW4116,R8357,R8356,R1163,NJW4110,NJG1818K75,NJM2815,NJM2816,RP510,NJW4152BA,R3118,R3117,R3116,NJM2904B,NJM8208,NJG1144KA1,R1290,R1170,NJW4203,R1294,R1171,R1172,NT1193FAAE1S,NJM2903,R8360,NJU72060,NJU71091,NJG1801BKGC-A,NJU71094,R1500,R1501,R1180,R3119XXXA,NT1192FAAE1S,R3119XXXB,NJM2119,NP4271,NJM8532T1,RN5C750,R1114,R8300,NJW4148,NJW4142,NJW4140,NC2905,NJU77572,NJG1187AKGC-A,NJU8759A,NJU7907A,NJU7047T1,R1245,NJW4830,NJM11100,NJW4154,NJG1809ME7,RP154,NJU72090,NJM8080,NJU72097,NJG1802K51,NJM8087,NJW4119,RP506,R1130,NJM12884,RP170,RP171,NT1195FAAE1S,NJU77552,NJM8532,NJG1801K75,NL9000,R1260,NJW4133,NJW4254,NJW4132,NJW4250,NJU7046,NJU7047,NJU77242,R3119XXXXA,NJW4152-BA,R3119XXXXE,R5117,NJG1806K75,NJG1812MET-A,R5114,NJG1817ME4,R5115,NJW1871A,R5116,R5110,R5111,R3121XXXXG,R5112,RN5T5611,R3121XXXXA,NP8700,NT1191GEAE3S,NJG1815K75,R3121XXXXE,NJW4182,NJU7367B,NJU77252,R3151XXXXE,R3151XXXXF,MJU71091,R3151XXXXA,R1560,R1561,R3151XXXXB,NJW4868,R3500,NJW1241,NJW1240,NJG1812AMET-A,NJW4750,RP111,RP115,NJU77582,R1211,NJG1161PCD,NJW4722,NJW4841,NC2780,NJG1682MD7,NJU7907B,NR1700,NJU7057,R3150XXXXE,R3150XXXXF,R1580,NJU77903,NJM2879,RP130,NJW4175,RP132,NJW4171,R3150XXXXA,R3150XXXXB
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型号- 54100 SERIES,SZSMF4L SERIES,483A SERIES,SP3022-01ETG-NM,59001,IXYK85N,LS0502SCD33,501A,LS05006VPQ33 SERIES,527 SERIES,HWB12 SERIES,MIDI® 498 IL SERIES,SP0115-01UTG,WLTM,658 SERIES,PXXX0S3N-A,IXTY2P50PA,LQ05041QCS6,WLTC,483,SP0115-01ETG,RCM,CG8 SERIES,LQ05022QCS4,PXXX0S3N-A SERIES,LQ05041QCS6 SERIES,483 SERIES,MIDI® 498,59143,DCNLB SERIES,IXYN110N120C4H1,SZSMF4L,CG9,CG8,IXYN110N,LQ05041RCS6 SERIES,WSTC,QS8004XHX,59155,HWB12,59156,54140,LS0504EDD12,10EV SERIES,MEGA® FLEX,IXTY2P50PA SERIES,WSTM,828,407A,PICO® II 521,LQ05041RCS6,LS24062RQ23,WPB,440A,IXYH30N,WPC,59040,3425L,LS24062RQ23 SERIES,SMF4L-T1G SERIES,LS0504EDD12 SERIES,AQ27COM-02JTG,SC24COM-01ETG,RCM SERIES,PXXX0S3N SERIES,828 SERIES,441A,IXYH55N,DCNLM,TPSMC SERIES,DCNLJ,DCNLH,DCNLB,FDA117,PGB2 0201,LS12052BD33,LS2405IDD23 SERIES,PXXX0S3N,LQ05021QCS4 SERIES,IXYH40N,IXYK85N120C4H1,408 SERIES,656 SERIES,LQ05021RCS4 SERIES,QVXX12XHX SERIES,SZ3KASMC,SV8012DRP,EVCC-01,LS12052BD33 SERIES,EVCC,ZCASE® FHZ,MIDI® 498 SERIES,AQ24COM-01,AQ3130E-01ETG,150520 SERIES,10EV,MATE-12B,WPB-A,TPSMB SERIES,QVXX25XHX,54140 SERIES,SP4338,DCNHR,QS8004XHX SERIES,3425L SERIES,881,LTKAK2-L,885,656 & 658,IXYN85N,526,527,408,AQ24COM-02,LPF,QVXX25XHX SERIES,CG9 SERIES,IXYH55N120C4H1,MDMB,SV8012DRP SERIES,MIDI® FLEX,HWB6 SERIES,MDMA,WPC-A,57041 SERIES,422A,L4CA-A,656,SV8012D,PGB2 0201 SERIES,IXYH30N120C4H1,526 SERIES,DCNHR SERIES,WJC-A,Q6035NAH5RP SERIES,20EV,LQ05021RCS4,AQ3118E-01ETG,TPSMC300A,SPDN,MEGA® 298,SP0115-01UTG SEREIS,LTKAK2-L SERIES,MIDI® 498 IL,SZ3KASMC SERIES,SP4338-02WTG,HWB6,MITI-7L,DSR,IXYN85N120C4H1,SP0115-01ETG SERIES,MISM-7L,CPC3981Z SERIES,MEGA® SN,DCNLJ SERIES,K12,MIDI® 498IL,MEGA 298,437A,DSR SERIES,150520,CPC3981Z,LQ05022QCS4 SERIES,SPDN SERIES,TPSMD400CA-A,LPF SERIES,ZCASE® FHZ SERIES,Q6035NAH5RP,57041,438A,TTP,WJC,LQ05021QCS4,DCNLH SERIES,SC24COM-01ETG SERIES,SMF4L-T1G,SSA,DCNLM SERIES,L4CA,TPSMC,L4CL-A,TPSMB,QVXX12XHX,483A,L4CC,TPSMD,LS2405IDD23,SSA SERIES,TPSMD SERIES,PICO® II 521 SERIES,MXB12R600DPHFC,LS05006VPQ33,54100,L4CL,IXYH40N120C4H1
NJU211 C-MOS四通道单刀单掷模拟开关
描述- 本资料为[NJU211]元器件的数据手册，提供产品规格信息，但不对错误或遗漏承担责任。数据手册中的应用电路仅用于展示产品典型用法，不构成任何权利（包括工业权）的保证或许可。
型号- NJU211M,NJU211D,NJU211
NJU201A C-MOS四通道单刀单掷模拟开关
描述- 本资料为[NJU201A]元器件的数据手册，提供产品规格信息，但不保证信息的准确性或完整性。数据手册中的应用电路仅用于展示产品的典型用法，不构成任何权利（包括工业权）的担保或许可。
型号- NJU201A,NJU201AD,NJU201AM
SKY13585-679LF:1.0至6.0 GHz单刀双掷开关
描述- SKY13585-679LF是一款1.0至6.0 GHz的单刀双掷（SPDT）开关，适用于WLAN应用中的模式切换。该开关采用先进的切换技术，具有低插入损耗和高隔离度，适用于低功耗收发应用。
型号- SKY13585-679LF
DG4157E断电隔离、0.86Ω、1.65 V至5.5 V单刀双掷模拟开关（2：1多路复用器）
描述- DG4157E是一款高性能的单刀双掷（SPDT）模拟开关，适用于1.65V至5.5V的单电源操作。该器件采用高密度CMOS技术制造，具有低导通电阻、低功耗、快速切换速度和隔离功能。
型号- DG4157E,DG4157EDN-T1-GE4,DG4157EDL-T1-GE3
SKY13592-689LF:1.0至6.0 GHz单刀双掷开关
描述- SKY13592-689LF是一款1.0至6.0 GHz的单刀双掷（SPDT）开关，适用于WLAN应用中的模式切换。该开关采用先进的切换技术，在所有切换路径上保持低插入损耗和高隔离度。
型号- SKY13592-689LF
SKY85614-11:4.9至5.9 GHz SPDT开关，带低噪声放大器
描述- SKY85614-11是一款集成单刀双掷（SPDT）开关和低噪声放大器（LNA）的元器件，适用于无线应用。该产品具有低噪声系数、高线性度和高增益，适用于802.11 a/n WLANs、5 GHz ISM无线电、智能手机、笔记本电脑、平板电脑、路由器、接入点和网关等应用。
型号- SKY85614-11
Nisshinbo（日清纺）车载用芯片选型指南（中文）
目录- 公司简介 品质等级及长期供货计划 车载应用框图 车载用芯片推荐产品 产品封装一览 产品索引
型号- R1515,R1516,R1513,R1514,NJW4182-T1,R1517,NJU7089,R1518,RP115-A,R1513-K,RP130-A,R3134,R1511,R5109-J,R1510,R1191,NR4250-P,NJG1187KG1,NJW2369,R1513-A,R5109-A,R1190,NSNJ9205,R3120XXXXA-A,R1526,R3151XXXXE-A,R1524,R1525,R3119XXXXA-J,NV3601-P,NJU7077,NJU7870,R1524-K,NA1150,NSNJ9208,NC2905-P,R3500-A,R8156,R1524-A,R8153,R8152,R1273-A,R3500-K,R8155,R8154,RN5T569,R3150XXXXB-J,R8151,RP550,NV3601-Q,R8150,NJG1814MD7,R1245-J,NJG1175KG1,NJU77701,NJG1159PHH-A,RP108,R3154,R3152,NJW4760,R3151,R1260-A,R8160,NJG1801AKGC-A,NJG1182UX2,R1260-K,R1245-A,NJW4106-T1,R3120XXXXE,R3151XXXXF-A,NV3600-P,NJU7890,NSNJ9200A,NV3600-Q,R3120XXXXA,R1540,R5106,R5107,R1525-K,NJG1804K64,R5108,R5109,NJG1150UA2,R5104,R5105,R1540-K,NJG1815AK75-A,R3160,NJU72015,R1525-A,R1272-A,R5114-K,NJW4171-T1,R1540-A,R1272-K,NL6012,R5114-A,R8315XXXXA,NJW4105-T1,RP550-A,NV3601,R8315XXXXB,R8315XXXXE,R1560-A,R8315XXXXF,NV3600,NJG1681MD7,R1276,NJG1669MD7,R1511-K,NJG1155UX2,R1278,R1560-K,NJW4107,NJW1871,NJW4106,NR1640,NJW4105,NR4252-P,NJW4104,R1272,NJM2369,R1511-A,R1273,R8300XXXXA,ND1433,R1270,R1150,R1271,MUSES8920A,R8300XXXXE,R8300XXXXG,NR1640-Q,NR1640-P,NJM41001,NJM41005,R5524,R5115-K,R8359,R8358,NJG1684ME2,R5523,R8355,RN5T5611-K,NJW4116,R8357,R8356,R1163,R1271-A,NJW4110,NR1700-P,NJG1818K75,NJM2815,NJM2816,R1271-K,RP510,R5115-A,NP8700-P,PR550,R1561-A,R3118,R3117,R3116,NJM2904B,R1561-K,NJG1144KA1,NJM8208,R1290,R3152-A,R1170,NJW4203,NR4254,R1294,R1171,R1172,NJM2903,R8360,R3152-K,RN5T569-A,RP108-A,R1278-K,NJU72060,NJU71091,NR4250,R5116-K,NJG1801BKGC-A,NJU71094,NR4252,R3121XXXXE-A,NJM11100-T1,R1500,R1501,R1180,NT1192FAAE1S,R3121,R3121XXXXE-K,R1270-A,NJM2119,R1270-K,R5116-A,R1278-A,NJW4750-T1,R3150XXXXA-J,NP4271,R1517-K,NJM2879-H,R3117-A,R5105-J,RN5C750,RP111-A,R1517-A,RP510-A,R1114,RP510-K,NR4254-P,R3120XXXXE-A,NJW4142,NJW4140,RP111-J,R5105-A,NC2905,NJU77572,NJG1187AKGC-A,R3151XXXXA-A,NC2780-P,NJU8759A,NC2780-Q,NJU7907A,R5117-K,R1245,R3119XXXXE-J,NJG1186PJL,R5117-A,NJW4830,R3150XXXXF-J,RP506-A,NJM11100,NJG1809ME7,NJW4154,RP154,RP506-K,NJU72090,NJM8080,RP171-J,R1518-K,R3154-R,R3116-A,NJU72097,R5106-J,NJG1802K51,NJM8087,NJW4119,R1518-A,RP171-A,R5106-A,R3154-A,R1130,RP506,NJM12884,NJG1173UX2,RP170,RP171,R1276-K,R3151XXXXB-A,NJU77552,R3121XXXXG-A,NJG1801K75,NJM8532,R1276-A,R5110-K,NT1189GDAE3S,R3121XXXXG-K,NJW4133,R1260,NJW4132,R5110-A,NJU7046,NJU7047,NJU77242,RP132-J,NJG1170UX2,R3119XXXXA,NJW4152-BA,R3119XXXXE,R5117,R5107-J,NJG1806K75,RP132-A,NJG1817ME4,R5114,NJW1871A,R5115,R5116,R3160-A,R5110,R5107-A,R5111,R3121XXXXG,R5112,RN5T5611,R3121XXXXA,NP8700,NT1191GEAE3S,NJG1815K75,R3121XXXXE,NJW4182,NJG1169UX2,NJU7367B,R3151XXXXE,R1526-K,R3151XXXXF,R3151XXXXA,R1560,R1561,R3151XXXXB,NJW4868,R3500,R1526-A,NJW1241,NJW1240,R5111-K,NJG1812AMET-A,NJW4750,R3160-K,RP111,R5111-A,RP115,NJU77582,R3118-A,NJW4107-T1,RP154-A,R1211,R5108-J,NJG1161PCD,R5108-A,NC2780,NJW4841,NJG1682MD7,NJU7907B,R3118-K,NR1700,NJU7057,NJW4175-T1,R3121XXXXA-A,NM12884-H,R3121XXXXA-K,R3150XXXXE,R3150XXXXF,R1580,R5112-K,NJU77903,NJM2879,RP130,NJW4175,NP4271-P,RP132,R5112-A,R3150XXXXE-J,NJW4171,R3150XXXXA,R3150XXXXB
日清纺低压差线性稳压器（LDO)选型表
日清纺（NISSHINBO）低压差线性稳压器具有宽广的工作电压范围，最高耐压60V，高精度：0.3%，多样化的封装：SOT/DFN/HSOP/TO
|
产品型号
|
品类
|
最小输入电压(V)
|
最大输入电压（V）
|
输出电压精度（%）
|
输出电流(mA)
|
封装
|
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R1524H050B-T1-AE
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LDO Regulator
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3.5V
|
36V
|
±0.6%
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200mA
|
SOT-89-5
|
选型表 - NISSHINBO 立即选型
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整体外形尺寸小至0.6*0.3*0.3mm (DFN0603)，工作电压范围覆盖2.5V~36V，电容值低至0.2pF，浪涌能力最高可达240安培，静电等级可达空气放电、接触放电±30KV。提供免费浪涌测试仪、静电测试仪测试。
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