ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry

2024-12-12 ROHM Official Website
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ROHM Co., Ltd. (ROHM) announced today that ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.


The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.


GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).


The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM's EcoGaN™ series, including the 45W AC adapter (fast charger) "C4 Duo" produced by Innergie, a brand of Delta Electronics, Inc.


"GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology" said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry."


“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC's expertise in semiconductor manufacturing with ROHM's proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”

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本文由上山打老虎转载自ROHM Official Website,原文标题为:ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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【IC】ROHM开发出可更大程度激发GaN器件性能的超高速栅极驱动器IC BD2311NVX-LB,助力应用更小型、更节能

全球知名半导体制造商ROHM(总部位于日本京都市)开发出一款超高速驱动GaN器件的栅极驱动器IC“BD2311NVX-LB”。采用业界先进的纳秒量级栅极驱动技术,助力LiDAR和数据中心等应用的小型化和进一步节能!

2023-10-20 -  产品 代理服务 技术支持 批量订货

Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC

EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057aN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

2024-06-13 -  产品 代理服务 技术支持 批量订货
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