Alliance Memory Launched High-Density, Low-Power 32M CMOS SRAM Offering 2.7V to 3.6V Power Supply in 12mm by 20mm TSOP-I Package
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SAN CARLOS, Calif. — May 1, 2013 — ALLIANCE Memory expanded its line of legacy low-power CMOS SRAMs with a 32M IC (2M x 16 / 4M x 8 switchable), the company’s highest-density low-power device to date. Operating from a single power supply of 2.7V to 3.6V and offering a fast access time of 55 ns, the AS6C3216 is optimized for low-power industrial, telecom, medical, and automotive applications, and it is particularly well-suited for battery backup non-volatile memory.
The device released today is offered in the 48-pin, 12-mm by 20-mm TSOP-I package. The AS6C3216 features low power consumption with a typical operating current of 45mA and a standby current of 10µA. All inputs and outputs are fully TTL-compatible.
The AS6C3216 is fabricated using very high-performance, high-reliability CMOS technology, and its current is stable within the operating temperature range of – 40℃ to + 85℃. The device offers fully static operation and tri-state output, and it features a data retention voltage of 1.2 V minimum.
Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS6C3216 is the latest in the company’s full range of low-power SRAM products, which include devices with densities of 64K, 256K, 1M, 2M, 4M, 8M, 16M, and now, 32M.
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本文由涂抹转载自ALLIANCE News,原文标题为:Alliance Memory Launches New High-Density, Low-Power 32M CMOS SRAM Offering 2.7-V to 3.6-V Power Supply in 12-mm by 20-mm TSOP-I Package,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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ALLIANCE 存储器选型表
提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型,VCC(V):0.6-5,MSL LEVEL:0-5,CLOCK(MHz):133-1866,可支持商业级/工业级/汽车级。
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DENSITY
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ORGANISATION
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VCC(V)
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TEMPERATURE RANGE(°C)
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PACKAGE
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MSL LEVEL
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AS7C164A-15JCN
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存储器
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FAST-Asynch
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64K Fast
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8K x 8
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5V
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Commercial (0 ~ 70°C)
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28pin SOJ(300mil)
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3
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选型表 - ALLIANCE 立即选型
【产品】工作电流仅12mA的32M CMOS SRAM,专为低功耗应用
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AS7C256C 32K X 8位高速CMOS SRAM
AS7C256C是一款高速CMOS静态随机存取存储器,具有15ns的快速访问时间、低功耗特性,适用于高速系统应用。该产品采用高性能、高可靠性CMOS技术制造,具有宽电源电压范围、TTL兼容的输入输出、完全静态操作和三态输出等特点。
ALLIANCE - 262,144-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY,32K X 8位高速CMOS SRAM,262144位高速CMOS静态随机存取存储器,32K X 8 BIT HIGH SPEED CMOS SRAM,AS7C256C–XXXXXXX,AS7C256C-15PCN,AS7C256C,高速系统应用,HIGH SPEED SYSTEM APPLICATION
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ALLIANCE - 32MX16低功耗CMOS SRAM,存储器,32MX16 LOW POWER CMOS SRAM,AS6C3216A,AS6C3216A-55TIN,AS6C3216A-55TINTR,工业电子,BATTERY BACK-UP NONVOLATILE MEMORY APPLICATION,汽车电子,LOW POWER APPLICATION,低功耗应用,通信设备,电池备份非易失性存储器应用
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【产品】64M Bits低功耗CMOS静态随机存取存储器AS6C6416
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AS6C6416-55TIN 64M位(4Mx16)低功耗CMOS SRAM
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ALLIANCE - 64M位(4MX16)低功耗CMOS SRAM,64M BITS(4MX16) LOW POWER CMOS SRAM,AS6C6416,AS6C6416-55TIN,BATTERY BACK-UP NONVOLATILE MEMORY APPLICATION,LOW POWER APPLICATION,低功耗应用,电池备份非易失性存储器应用
AS6C8016B-45ZIN AS6C8016B-55ZIN 8MB-512K X 16位超低功耗CMOS SRAM
该资料介绍了AS6C8016B-45ZIN和AS6C8016B-55ZIN两款低功耗CMOS静态随机存取存储器(SRAM)。这些器件具有快速访问时间、低功耗特性,适用于电池备份的非易失性内存应用。它们支持单电源供电范围2.7V至3.6V,所有输入和输出都与TTL兼容。
ALLIANCE - LOW POWER CMOS STATIC RANDOM ACCESS MEMORY,SUPER LOW POWER CMOS SRAM,低功耗CMOS静态随机存取存储器,超低功耗CMOS SRAM,AS6C8016B,AS6C8016B-55ZIN,AS6C8016B-45ZIN
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【产品】具有多种存储操作模式的低功耗SRAM存储器AS6C62256A
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