UMS New Range of Packaged Transistors：CHKA012bSYA,CHK-8101-SYC and CHK8201-SYA，Dedicated to Space Applications

时间： 2022-12-24 来源：UMS News

技术问答

UMS introduces no fewer than three new packaged transistors. The CHKA012bSYA, the CHK-8101-SYC and the CHK8201-SYA. These product are packaged in hermetic ceramic metal flange package, and dedicated to space applications.

CHKA012bSYA
The CHKA012bSYA is an unmatched High Power GaN transistor. This power bar covers from DC to up 6GHz. It exhibits a high power of 130W with an excellent PAE of 58%. Its consumption remains low with 50V@640mA; It can be used in CW or Pulsed mode. It’s associated gain@max PAE is of 16dB@1.3GHz.

The CHKA012bSYA is designed on a UMS GaN 0.5µm proprietary technology.

This circuit is proposed in an hermetic metal ceramic flanged package which makes it an excellent solution not only for telecommunication and radar for space but also for all applications requiring hermetic solutions.

Fig.1

Main characteristics:

● Wide Band Capability: Up to 6GHz

● High Psat: 130W

● High Power Added Efficiency: 58%@1.3GHz

● Pulsed and CW operating modes

● DC Bias: 50V @ ID_Q=640mA

● MTTF >106 hours@Tj =200℃

● Associated Gain@Max PAE: 16dB@1.3GHz

● Hermetic ceramic metal flanged power Package

Fig.2

CHK 8101-SYC

The CHK 8101-SYC is an unmatched 15W GaN transistor for RF power applications up to 6GHz with High performance. It is a broadband solution for a variety of RF power applications such as multipurpose, space and telecommunication applications.

This wideband circuit exhibits a high power above 15W and a remarkable efficiency above 64% and a low consumption 50V@100mA. It can be used in pulsed and CW operating modes.

The CHK8101-SYC has been designed on UMS 0.5µm space evaluated proprietary GaN technology. It was the 1st one of a range of space qualified hermetically packaged power transistors.

Fig.3

Main features:

● 15W GaN Power Packaged Transistor

● Wide band capability up to 6GHz

● Pulsed and CW Operating modes

● High Power>15W

● High Efficiency up to 64%

● Gain: 19dB

● Low Consumption: 50V@100mA

● MTTF>106 hours @Tj=200℃

● Hermetic ceramic-metal flange package

● GaN Power in hermetic Ceramic-metal flange package

● Broadband performance: DC-4GHz

● High Psat: 45W

● PAE: 55%

● Small signal Gain: 22dB

● Associated gain at max PAE: 17dB

Fig.4

CHK8201-SYA

The CHK8201-SYA is a powerful 45W broadband GaN power bar covering DC to 4GHz. The product exhibits an excellent PAE of 55% and a linear gain of 22dB. It shows a consumption of 50V@200mA.

Fig.5

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UMS Newly Launched CHK8201-SYA Transistor with Covering DC to 4GHz and A Linear Gain of 22dB

UMS Transistor The CHK8201-SYA is a powerful 45W broadband GaN power bar covering DC to 4GHz. The product exhibits an excellent PAE of 55% and a linear gain of 22dB. It shows consumption of 50V@200mA.

新产品发布时间 : 2022-09-27

UMS Newly Launches a 15W GaN Transistor CHK8101-SYC with Low Consumption of 50V@100mA, Used for RF Power Applications

The CHK8101-SYC GaN transistor has been designed on UMS 0.5µm space evaluated proprietary GaN technology. It was the 1st one of a range of space-qualified hermetically packaged power transistors.

新产品发布时间 : 2022-08-26

【元件】UMS推出新系列封装晶体管CHKA012bSYA、CHK-8101-SYC和CHK8201-SYA

UMS推出了不少于三个型号新的封装晶体管——CHKA012bSYA、CHK-8101-SYC和CHA8201-SYA。这些产品采用密封陶瓷金属法兰封装，专用于空间应用。

新产品发布时间 : 2023-02-07

UMS氮化镓（GaN）功率晶体管选型表

UMS氮化镓（GaN）功率晶体管选型:Glin(dB) @ Freq(GHz):12-23.5，Saturated Power(W)：14-180，Bias(mA)：0.1-1300，Bias(V)：30-50.

产品型号	品类	Glin(dB) @ Freq(GHz)	Operating Frequency(GHz)	Saturated Power(W)	PAE(%) @ Freq(GHz)	Bias(mA)	Bias(V)	Case
CHKA011aSXA	氮化镓功率晶体管	23.5 @ 0.44	Up to 1.5	130	75 @ 0.44	640	50	Ceramic Metal Flange

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