SiC MOSFETs from ROHM Chosen by Lucid for Efficient On-board Charging of Groundbreaking Luxury Electric Vehicle

2022-03-11 ROHM

ROHM Semiconductor has announced that Lucid, an advanced luxury electric vehicle company headquartered in California, is using its silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) in the ground-breaking Lucid Air. The Wunderbox, the main on-board charging unit in the Lucid Air, integrates a DC-DC converter and the Bi-directional On-Board Charger (OBC), where an advanced power factor correction circuit is capable of operating at high switching frequencies thanks to the superior performance of the SiC MOSFET. The improved performance at high frequency and high temperature of ROHM's SCT3040K and SCT3080K SiC MOSFETs have helped Lucid to reduce the size of the design, and to reduce power losses, which results in high charging efficiency.

Lucid's mission is to inspire the adoption of sustainable energy by creating the most captivating electric vehicles, centered around the human experience. The company's first car, Lucid Air, is a state-of-the-art luxury sedan with a California-inspired design underpinned by race-proven technology. Customer deliveries of Lucid Air, which is produced at Lucid's new factory in Casa Grande, Arizona, are underway. The Lucid Air was named the 2022 MotorTrend Car of the Year®. Additionally, an independent article in InsideEVs confirmed the Lucid Air's charging capabilities. For example, when connected to DC fast chargers, they found it takes approximately 22 minutes to deliver a charge which will enable select Lucid Air models to cover 300 miles. The SiC MOSFET switched OBC can deliver up to 19.2 KW AC charging, adding up to 80 miles of range per hour.


"It was important for Lucid to form strategic alignments with key EV power device suppliers to ensure our future success. ROHM is one of the world's leading suppliers of SiC technology, with strong technical support. We were impressed with ROHM's strategic investments to increase the production capacity of SiC products, and its development of next generation technologies,”said Eric Bach, Senior Vice President of Product and Chief Engineer, Lucid Group.“Lucid values the close collaborative relationship with ROHM in this work.”


Added Kazuhide Ino, ROHM's Managing Executive Officer, CSO and Director of Accounting & Finance Headquarters: "We are excited to help Lucid develop systems for electric vehicles that maximize the potential of ROHM's SiC MOSFETs. ROHM will continue to strengthen its SiC device lineup, delivering power solutions - such as the charging systems featured in the Lucid Air - that contribute to technological innovation in next-generation automobiles. New products soon to be added, include gate driver ICs that maximize device performance."

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本文由董慧转载自ROHM,原文标题为:SiC MOSFETs from ROHM chosen by Lucid for efficient on-board charging of groundbreaking luxury electric vehicle,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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选型指南  -  ROHM  - Ver.1.1  - 2019年11月 PDF 中文 下载

在EV应用中使用第4代SiC MOSFET的效果:图腾柱PFC实机评估

本文将介绍在相同的BEV电源架构的组成模块之一—OBC的双向图腾柱PFC中使用第4代SiC MOSFET时的实验结果。图腾柱PFC是作为可提高效率的PFC转换器在近年来备受关注的拓扑。另外,为了微电网系统更加稳定,并促进供需平衡,全球范围都在研究V2G(Vehicle To Grid),双向工作也变得越发重要。

设计经验    发布时间 : 2024-07-14

数据手册  -  瞻芯电子  - Rev 1.0  - Aug. 2023 PDF 英文 下载

ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies

ROHM SiC MOSFETs Contribute to Smaller, More Efficient, Reliable High Power Bidirectional Power Supplies.ROHM‘s products were essential to the development of a high reliability, high efficiency 3U20kW bidirectional large-capacity DC power supply.

应用方案    发布时间 : 2024-07-09

【应用】1200V/160mΩ的SiC MOSFET助力双向OBC小型化设计,可实现300KHz开关频率

本文推荐Littelfuse的SiC MOSFET LSIC1MO120E0160,耐压1200V,导通电阻160mΩ,助力双向OBC设计。可实现300KHz的开关频率,设计时可减小变压器体积,实现OBC小型化需求,此外产品本身具有高可靠性。

应用方案    发布时间 : 2021-01-14

世强硬创获昕感科技授权代理,SiC MOSFET实现超低导通电阻

昕感科技SiC MOSFET器件新产品(N2M120007PP0)实现业界领先的超低导通电阻1200V/7mΩ,极大减少损耗。

签约新闻    发布时间 : 2024-03-21

Need a Charge? SiC MOSFET DIF120SIC053-AQ with Kelvin-Source Speeds Up the Process

The DIF120SIC053-AQ is a Silicon Carbide MOSFET by Diotec Semiconductor, dedicated to charging systems of electric vehicles. It features a high reverse voltage of 1200 V combined with an extremely low on-resistance of just 53 mΩ.

应用方案    发布时间 : 2024-06-13

4th Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

型号- SCT4062KR,SCT4XXXXXXXXE,SCT4XXXXXXXR SERIES,P04SCT4018KE-EVK-001,SCT4036KR,SCT3040KR,P05SCT4018KR-EVK-001,SCT3XXXX,SCT4XXXXXXXR,SCT4018KR,SCT4026DR,BM61M41RFV-C,SCT4XXXXXXXXE SERIES,P04SCT4018KR-EVK-001,SCT4XXXX,SCT4036KE

应用笔记或设计指南  -  ROHM  - Rev.001  - June 2022 PDF 英文 下载

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高热流密度液冷板定制

定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

最小起订量: 1片 提交需求>

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

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