MDT Released Bi-stable TMR Magnetic Switch Sensors MR1212/TMR1213/TMR1215 with Passive Magnetic Memory Effect
MultiDimension Technology Co., Ltd. (MDT), a leading supplier of magnetic sensors specializing in Tunneling Magnetoresistance (TMR) technology, has released three models of bi-stable TMR magnetic switch sensors TMR1212/TMR1213/TMR1215. They are low-power bipolar latching TMR switch sensors that can detect and retain the ON/OFF state triggered by magnetic polarity without a power supply. The passive magnetic memory effect is ideally suited for level switches in elevator doors, magnetic flip level gauges, non-contact magnetic knobs, and many industrial applications that require failsafe operations in position and speed measurement.
In the event of power failures, TMR1212/TMR1213/TMR1215 can store the ON/OFF state passively, and the latest state can be retrieved immediately after the power supply is resumed. They are designed for high-speed operations in an always-active mode with 1.5microAmpere low power consumption. Their switching sensitivities are rated from 20 to 90 Gauss to support a variety of use conditions.
"MDT's bi-stable TMR switch sensors are the first-of-a-kind on the market among all semiconductor-based magnetic sensor technologies including Hall Effect, AMR (Anisotropic Magnetoresistance), GMR (Giant Magnetoresistance), and TMR. Compared with a bi-stable Reed switch that requires a pair of magnets to realize the latching function thus resulting in a large form factor, our bi-stable TMR switch sensors offer a much more compact footprint in standard SOT23 or TO92 packages, competitive cost-effectiveness, improved reliability, and the unique combination of passive operation along with the high-speed active mode in low-power," said Dr. Song Xue, Chairman and CEO of MultiDimension Technology. "Thanks to our strong IP portfolio and advanced manufacturing facilities, we are able to offer customers the best value of our TMR technology that combines the key benefits of existing magnetic sensor technologies while overcoming their limitations in a steadily growing TMR sensor product family."
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本文由Vicky转载自MDT News，原文标题为:MDT Releases Bi-stable TMR Magnetic Switch Sensors with Passive Magnetic Memory Effect，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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品类
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兼容型号
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类型
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供电电压（V）
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功耗（nA、μA、mA）
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工作模式
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敏感方向
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B_op(Gs,25°C)(Gs)
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B_rp(Gs,25°C)(Gs)
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输出接口
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封装形式
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TMR1102
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TMR磁开关传感器芯片
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—
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单极
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1.8～5.5 V
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1.5μA
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连续供电
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X轴
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17
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13
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CMOS
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SOT23-3
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品类
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类型
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供电电压(V)
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功耗(mA, μA, nA)
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工作模式
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敏感方向
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Bᴏᴘ (Gs,25℃ )
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Bʀᴘ (Gs,25℃ )
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输出接口
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封装&尺寸(mm)
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TMR1102
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单极
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1.8V~5.5V
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1.5μA
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连续供电
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X轴
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17Gs
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13Gs
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CMOS
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SOT23-3
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