MDT Released Bi-stable TMR Magnetic Switch Sensors MR1212/TMR1213/TMR1215 with Passive Magnetic Memory Effect
MultiDimension Technology Co., Ltd. (MDT), a leading supplier of magnetic sensors specializing in Tunneling Magnetoresistance (TMR) technology, has released three models of bi-stable TMR magnetic switch sensors TMR1212/TMR1213/TMR1215. They are low-power bipolar latching TMR switch sensors that can detect and retain the ON/OFF state triggered by magnetic polarity without a power supply. The passive magnetic memory effect is ideally suited for level switches in elevator doors, magnetic flip level gauges, non-contact magnetic knobs, and many industrial applications that require failsafe operations in position and speed measurement.
In the event of power failures, TMR1212/TMR1213/TMR1215 can store the ON/OFF state passively, and the latest state can be retrieved immediately after the power supply is resumed. They are designed for high-speed operations in an always-active mode with 1.5microAmpere low power consumption. Their switching sensitivities are rated from 20 to 90 Gauss to support a variety of use conditions.
"MDT's bi-stable TMR switch sensors are the first-of-a-kind on the market among all semiconductor-based magnetic sensor technologies including Hall Effect, AMR (Anisotropic Magnetoresistance), GMR (Giant Magnetoresistance), and TMR. Compared with a bi-stable Reed switch that requires a pair of magnets to realize the latching function thus resulting in a large form factor, our bi-stable TMR switch sensors offer a much more compact footprint in standard SOT23 or TO92 packages, competitive cost-effectiveness, improved reliability, and the unique combination of passive operation along with the high-speed active mode in low-power," said Dr. Song Xue, Chairman and CEO of MultiDimension Technology. "Thanks to our strong IP portfolio and advanced manufacturing facilities, we are able to offer customers the best value of our TMR technology that combines the key benefits of existing magnetic sensor technologies while overcoming their limitations in a steadily growing TMR sensor product family."
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本文由Vicky转载自MDT News,原文标题为:MDT Releases Bi-stable TMR Magnetic Switch Sensors with Passive Magnetic Memory Effect,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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多维科技(MDT)磁传感器芯片和模组选型指南
型号- AMR3108G,GE-T,TMR2705,TMR1202HT,TMR2703,TMR7401-600MA,USB2510-CAL01-800,TMR6406L,USB21023,USB25103,TMR1102,TMR1302H,TMR1343,TMR1342,AMR3108AP,TMR1341,TMR1348,TMR3002,TMR7204,TMR3004,AMR4020,TMR1345,TMR3005,AGVTMR45XS,TMR7504-B,USB2510A,TMR6406X,TMR3001,TMR1340,TMR13DX,TMR7553-B,AGVTMR25XC,LPS-TMR125B4,GE-A,TMR2602,TMR3105AP,AMR3013P,TMR6401,AMR4010,AGVTMR25X4,TMR6218LA,TMR9112,TMR2305M,TMR2605,TMR6206D,TMR2604,LPS-TMR125A4,TMR1366,TMR6206L,TMR7903,TMR2613,TMR4M06,TMR7502,AGVTMR46XS,TMR4M07,TMR4M08,TMR4M02,TMR4M03,TMR4M04,TMR4M05,TMR1362,TMR9002,TMR6217LA2,TMR9001,AMR2501,USB27053,TMR7554-B,TMR7401-1000MA,TMR2103,TMR4007,USB2705A,TMR2102,TMR6306,AGVTMR15XN,TMR2503,TMR4003,TMR2623,TMR4004,AGVTMR15XP,TMR2105,TMR2501,TMR4005,TMR2104,TMR4006,AMR3003L,TMR4001,TMR4002,TMR1252,FSD-TMR1005,TMR7502-C,TMR2109,TMR2505,TMR2901,TMR2108,TMR2905,FSD-TMR1006,TMR4018,TMR6318,TMR2111,AGVTMR45LC,TMR1304,TMR4014,TMR1303,TMR4015,AMR4100,TMR1148,TMR1302,TMR4016,TMR4017,TMR1302HT,TMR4011,TMR4012,TMR7401,TMR4013,TMR2110,TMR1383,TMR1262,TMR3105G,TMR6212LA,TMR7555-B,TMR7303-D,TMR7551-B,TMR7401-300MA,AMR1507,TMR-MAC005,TMR1308,TMR6401C,TMR1305,TMR6218XA,TMR1309,TMR1157,TMR2003,AMR3001,TMR1155,TMR2001,TMR6209,TMR1202H,TMR62082,TMR2005,AMR3005,AMR3008,TMR7503-B,TMR2009,TMR2922,AMR4050,TMR2653,AGVTMR46LC,TMR7204-C,TMR1287,TMR7303,TMR1202,TMR7302,AMR2302,TMR6404X,TMR1283,TMR1162,TMR7556-B,TMR3102P,TMR7302-D,TMR6403A,TMR6318C,TMR7552-C,TMR1208,TMR1206,USB2510T,AGVTMR360C,TMR1212,AMR1320,TMR2701,TMR6501,TMR1215,TMR1341XD,TMR1213,TMR7551
多维科技传感器芯片选型表
多维科技传感器芯片选型表提供TMR磁开关传感器芯片,TMR角度传感器芯片,TMR线性磁场传感器芯片,TMR齿轮传感器芯片,AMR磁开关传感器芯片,AMR角度传感器芯片,AMR线性磁场传感器芯片,AMR磁栅传感器芯片,薄膜型温度传感器芯片选型,基于单极、双极锁存、全极等类型,0~40V供电电压等、多种输出接口和敏感方向等。
产品型号
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品类
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兼容型号
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类型
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供电电压(V)
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功耗(nA、μA、mA)
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工作模式
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敏感方向
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B_op(Gs,25°C)(Gs)
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B_rp(Gs,25°C)(Gs)
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输出接口
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封装形式
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TMR1102
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TMR磁开关传感器芯片
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—
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单极
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1.8~5.5 V
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1.5μA
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连续供电
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X轴
|
17
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13
|
CMOS
|
SOT23-3
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选型表 - 多维科技 立即选型
多维科技TMR磁开关传感器芯片选型表
多维科技TMR磁开关传感器芯片选型, 类型:单极/双极锁存/全极, 供电电压: 1.6V~5V/1.8V~5.5V/3V~40V, 工作模式:连续供电/分时供电
产品型号
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品类
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类型
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供电电压(V)
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功耗(mA, μA, nA)
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工作模式
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敏感方向
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Bᴏᴘ (Gs,25℃ )
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Bʀᴘ (Gs,25℃ )
|
输出接口
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封装&尺寸(mm)
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TMR1102
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微安级高频响TMR磁开关传感器芯片
|
单极
|
1.8V~5.5V
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1.5μA
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连续供电
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X轴
|
17Gs
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13Gs
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CMOS
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SOT23-3
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选型表 - 多维科技 立即选型
【产品】TMR1212双极磁开关集成隧道磁阻(TMR)传感器和CMOS技术,支持1kHz高频率响应,功耗低至1.5μA
TMR1212是一款集成了隧道磁阻(TMR)传感器和CMOS技术,为高灵敏度、高速、低功耗、高精度应用而开发的双极磁开关。与常规的磁开关相比,TMR1212 带有磁存储功能,在掉电情况下依然可以探测磁场极性变化,并存储在磁存储单元中,上电后可以立刻读取最近一次的磁场极性状态。
【产品】高灵敏度无源磁记忆双极锁存TMR磁开关传感器系列,是低功耗、高性能应用的理想选择
多维科技的TMR1212/TMR1213/TMR1215集成了隧道磁阻(TMR)传感器和CMOS技术,是为高灵敏度、高速、低功耗、高精度应用而开发的无源磁记忆双极锁存TMR磁开关传感器系列产品。与常规的磁开关相比,TMR1212/TMR1213/TMR1215带有磁记忆功能,在掉电情况下依然可以探测磁场极性变化,并存储在磁存储单元中,上电后可以立刻读取最近一次的磁场极性状态。
多维科技推出高灵敏度无源磁记忆TMR磁开关传感器
描述- 江苏多维科技有限公司推出新型TMR磁开关传感器TMR1215,具备无源磁记忆功能,适用于电梯、液位计等工业应用。该传感器在断电情况下仍能记忆磁场极性变化,上电后可立即读取。产品系列包括多种磁传感器芯片和模组,满足不同应用需求。MDT致力于提供高性能、低成本磁传感器,拥有多项专利技术和先进制造能力。
型号- TMR1212,TMR1215,TMR1213
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